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    ALPHA NEW YEAR DATE CODE Search Results

    ALPHA NEW YEAR DATE CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DM7842J/883 Rochester Electronics LLC DM7842J/883 - BCD/Decimal Visit Rochester Electronics LLC Buy
    9310FM Rochester Electronics LLC 9310 - BCD Decade Counter (Mil Temp) Visit Rochester Electronics LLC Buy
    54LS48J/B Rochester Electronics LLC 54LS48 - BCD-to-Seven-Segment Decoders Visit Rochester Electronics LLC Buy
    TLC32044IFK Rochester Electronics LLC PCM Codec, 1-Func, CMOS, CQCC28, CC-28 Visit Rochester Electronics LLC Buy
    TLC32044IN Rochester Electronics LLC PCM Codec, 1-Func, CMOS, PDIP28, PLASTIC, DIP-28 Visit Rochester Electronics LLC Buy

    ALPHA NEW YEAR DATE CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    kvt22

    Abstract: KVL11 KPT23 ON Semiconductor marking k1648 KLT20 HEL16 KEL32 KEL01 xaa9646
    Text: AND8002/D ECLinPS, ECLinPS Lite and ECLinPS Plus Device Type and Date Code Marking Guide Gary Richards, ECL Logic Product Engineering http://onsemi.com APPLICATION NOTE need ON Semiconductor’s marking spec 12MON00232D and S.O.P. 7–19 ID of Products to Location of


    Original     		PDF AND8002/D 12MON00232D r14525 kvt22 KVL11 KPT23 ON Semiconductor marking k1648 KLT20 HEL16 KEL32 KEL01 xaa9646

    ADV9617

    Abstract: altera date code format altera "date code format" Date Code Formats altera Date Code Formats on alpha year and work week ALPHA NEW YEAR DATE CODE ALPHA YEAR DATE CODE ALPHA YEAR CODE mark six
    Text: CUSTOMER ADVISORY DATE CODE FORMAT Effective immediately, Altera will adopt a six character date code format. This advisory summarizes and explains the format of Altera’s date codes on the top-side mark and on the bar code labels. PCNs 9501 and 9612 issued Jan’95 and Jun’96, respectively, announced Altera’s intent


    Original     		PDF ADV9617 ADV9617 altera date code format altera "date code format" Date Code Formats altera Date Code Formats on alpha year and work week ALPHA NEW YEAR DATE CODE ALPHA YEAR DATE CODE ALPHA YEAR CODE mark six

    ADV9916

    Abstract: altera Date Code Formats altera date code format Date Code Formats altera "date code format" Date Code Formats Altera date format marked ALPHA YEAR DATE CODE ALPHA NEW YEAR DATE CODE
    Text: CUSTOMER ADVISORY TOP MARK ENHANCEMENT Altera is adding two characters, one prefix and one suffix, to its current nine-character date code field. These characters are being added to enhance internal traceability and will not affect customer ordering codes.


    Original     		PDF ADV9916 ADV9916 altera Date Code Formats altera date code format Date Code Formats altera "date code format" Date Code Formats Altera date format marked ALPHA YEAR DATE CODE ALPHA NEW YEAR DATE CODE

    intel topside mark

    Abstract: Qualcomm MSM2300 intel date code marking intel topside mark BGA MSM2300 qualcomm ww transistor conversion codes intel marking diode T3 Marking marking 82
    Text: Product Change Notification Please contact your distributor with any questions. Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s


    Original     		PDF

    ibm P2SC

    Abstract: P2SC PowerPC-620 SPEC95 21164 Klamath 21264 ALPHA YEAR CODE alpha date code System PA-8000
    Text: VOLUME 10, NUMBER 9 JULY 8, 1996 MICROPROCESSOR T H E I N S I D E R S ’ G U I D E T O M I C R O P R O C E S S O R REPORT H A R D W A R E Digital’s 21164 Reaches 500 MHz Alpha Regains Performance Lead, Leaves Pentium Pro in Dust Six months ago, Intel for the first time surpassed the


    Original     		PDF 500-MHz ibm P2SC P2SC PowerPC-620 SPEC95 21164 Klamath 21264 ALPHA YEAR CODE alpha date code System PA-8000

    V = Device Code

    Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
    Text: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


    Original     		PDF MC74VHC1G05 V = Device Code diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004

    wz 74 marking

    Abstract: t138a V = Device Code
    Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G02 MC74HC 353/SC wz 74 marking t138a V = Device Code

    marking t132

    Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
    Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G08 353/SC marking t132 marking code V6 diode V = Device Code

    vsop8 package outline

    Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
    Text: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G09 vsop8 package outline vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc

    H2D MARKING CODE

    Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
    Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G08 MC74HC 353/SC H2D MARKING CODE marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G02 353/SC V = Device Code

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G00 353/SC V = Device Code

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


    Original     		PDF MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D

    V = Device Code

    Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
    Text: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original     		PDF MC74VHC1GT32 V = Device Code diode Marking code v3 on semi aa sot353 TOREX TOP CODE

    V = Device Code

    Abstract: diode T132
    Text: MC74VHC1GU04 Unbuffered Inverter The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1GU04 MC74VHCU04 MC74VHC1G04 MC74VHC04 V = Device Code diode T132

    torex new marking

    Abstract: TOSHIBA el suffix V = Device Code
    Text: MC74VHC1G03 2-Input NOR Gate with Open Drain Output The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


    Original     		PDF MC74VHC1G03 torex new marking TOSHIBA el suffix V = Device Code

    ON Semiconductor marking

    Abstract: marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a
    Text: MC74VHC1GT02 2-Input NOR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT02 is a single gate 2–input NOR fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1GT02 ON Semiconductor marking marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a

    ON Semiconductor marking

    Abstract: fairchild marking codes sot-23 SOT-353 MARKING w5 date code marking toshiba Nand M2 MARKING SOT23 MARKING W2 SOT23 sot353 vk sot-353 cf sot-353 on semi marking code sot T138-A
    Text: MC74VHC1GT00 2-Input NAND Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT00 is a single gate 2–input NAND fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1GT00 ON Semiconductor marking fairchild marking codes sot-23 SOT-353 MARKING w5 date code marking toshiba Nand M2 MARKING SOT23 MARKING W2 SOT23 sot353 vk sot-353 cf sot-353 on semi marking code sot T138-A

    hep08

    Abstract: marking code V6 diode V = Device Code
    Text: MC74VHC1G32 2-Input OR Gate The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G32 353/SC hep08 marking code V6 diode V = Device Code

    TOSHIBA el suffix

    Abstract: AND8004 AND8004/D V = Device Code
    Text: MC74VHC1G14 Schmitt-Trigger Inverter The MC74VHC1G14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G14 TOSHIBA el suffix AND8004 AND8004/D V = Device Code

    Untitled

    Abstract: No abstract text available
    Text: REV DT04-3P-E003 A R E V 1S I O N S SYM NC A D E S C R 1P T I O N DATE NEW RELEASE PER E.O. A09355 REVISED PER E.O. PI8I84 APPROVED J .A . 9/6/90 A s>a . 1.758 [44.65] / TO .973 [24.7N O s= D — o 3 5 ons <o> OJ f jji <&n> <un> “ O 3 ^ DATE CODE: YEAR IS REPRESENTED BY LAST


    OCR Scan     		PDF DT04-3P-E003 A09355 PI8I84 DT06-3S-* -E003