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    Abstract: No abstract text available
    Text: Analog Power AM2314NE N-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 32 @ VGS = 4.5V 44 @ VGS = 2.5V ID(A) 5.3 4.5 Typical Applications:


    Original     		AM2314NE PDF

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2314N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power


    Original     		AM2314N OT-23 PDF