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    Spansion AM29BDS640HD8VMI

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    AMD AM29BDS128HE9VKI

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    AM29BDS Datasheets (121)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Am29BDS064H Advanced Micro Devices 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS064HD8 Advanced Micro Devices 64 MBit (4M x 16 Bit) CMOS 1.8 V Only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS064HD9 Advanced Micro Devices 64 MBit (4M x 16 Bit) CMOS 1.8 V Only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS064HE8 Advanced Micro Devices 64 MBit (4M x 16 Bit) CMOS 1.8 V Only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS064HE9 Advanced Micro Devices 64 MBit (4M x 16 Bit) CMOS 1.8 V Only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS128H Spansion 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS128HD8 Advanced Micro Devices 128 MBit (8M x 16 Bit) CMOS 1.8 V Only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    Am29BDS128HD8VKI Advanced Micro Devices 128 Megabit (8 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    Am29BDS128HD9VKI Advanced Micro Devices 128 Megabit (8 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS128HE8 Spansion 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    Am29BDS128HE8VKI Advanced Micro Devices 128 Megabit (8 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS128HE9 Advanced Micro Devices 128 MBit (8M x 16 Bit) CMOS 1.8 V Only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS128HE9 Spansion 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    Am29BDS128HE9VKI Advanced Micro Devices 128 Megabit (8 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    AM29BDS128HF8 Advanced Micro Devices 128 MBit (8M x 16 Bit) CMOS 1.8 V Only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    Am29BDS128HF8 Advanced Micro Devices CMOS 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory Original PDF
    AM29BDS128HF9 Advanced Micro Devices 128 MBit (8M x 16 Bit) CMOS 1.8 V Only Simultaneous Read/Write, Burst Mode Flash Memory Original PDF
    Am29BDS128HF9 Advanced Micro Devices CMOS 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory Original PDF
    Am29BDS320G Advanced Micro Devices 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read-Write, Burst Mode Flash Memory Original PDF
    Am29BDS320G Advanced Micro Devices 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read-Write, Burst Mode Flash Memory Original PDF
    ...

    AM29BDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS323D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs, S29NS032J supersedes Am29BDS323D. Please refer to the S29NS-J family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes


    Original     		PDF Am29BDS323D S29NS032J S29NS-J 23476B5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)


    Original     		PDF Am42BDS6408G Am29BDS640G 16-Bit) 93-Ball

    Am29N643

    Abstract: S29NS-J VDA044 am29bds643g SPANSION N643
    Text: Am29BDS643G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs, S29NS064J supersedes Am29BDS643G. Please refer to the S29NS-J family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes


    Original     		PDF Am29BDS643G S29NS064J S29NS-J 25692A2 Am29N643 VDA044 SPANSION N643

    TS048-48-Pin

    Abstract: S29AS008J spansion obsolescence
    Text: Am29SL400C Data Sheet Retired Product Am29BDS323D Cover Sheet This product has been retired and is not recommended for designs. For new and current designs, S29AS008J supercedes Am29SL400C. This is the factory-recommended migration path. Please refer to the S29AS008J data sheet for specifications


    Original     		PDF Am29SL400C Am29BDS323D S29AS008J TS048-48-Pin spansion obsolescence

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29BDS323D 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O


    Original     		PDF Am29BDS323D 16-Bit)

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS320G Data Sheet October 1, 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29BDS320G 27243B1

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS640G Data Sheet October 1, 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29BDS640G 25903C1 25903C1

    AM29BDS064H

    Abstract: AM29BDS128H SA10 SA11 SA14 SA15 SA18
    Text: AM29BDS128H/AM29BDS064H 128 or 64 Megabit 8 M or 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY INFORMATION Distinctive Characteristics Architectural Advantages Hardware Features „ Single 1.8 volt read, program and erase (1.65 to


    Original     		PDF AM29BDS128H/AM29BDS064H 16-Bit) AM29BDS128H/064H AM29BDS064H AM29BDS128H SA10 SA11 SA14 SA15 SA18

    S29WS064J

    Abstract: 2222H
    Text: Am29BDS320G Data Sheet The Am29BDS320G has been retired and is not recommended for designs. For new and current designs, S29WS064J supersedes Am29BDS320G and is the factory-recommended migration path for this device. Please refer to the S29WS064J data sheet for specifications and ordering information.


    Original     		PDF Am29BDS320G S29WS064J 27243B2 2222H

    SA10

    Abstract: SA11 SA14 SA15 SA18 SA22 27024 eprom
    Text: Am29BDS128H/Am29BDS064H 128 or 64 Megabit 8 M or 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY INFORMATION Datasheet Distinctive Characteristics Architectural Advantages „ „ Single 1.8 volt read, program and erase (1.65 to


    Original     		PDF Am29BDS128H/Am29BDS064H 16-Bit) 16/ument SA10 SA11 SA14 SA15 SA18 SA22 27024 eprom

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS320G Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


    Original     		PDF Am29BDS320G

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS640G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29BDS640G 25903C0

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29BDS643D 64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O


    Original     		PDF Am29BDS643D 16-Bit) Hz/40

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS640G Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


    Original     		PDF Am29BDS640G

    FDE048

    Abstract: No abstract text available
    Text: PRELIMINARY Am29BDS643D 64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O


    Original     		PDF Am29BDS643D 16-Bit) Hz/40 0041h. FDE048

    VDA044

    Abstract: Am29N643 n643
    Text: Am29BDS643G Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


    Original     		PDF Am29BDS643G VDA044 Am29N643 n643

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS640G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs, S29WS064K supersedes Am29BDS640G. Please refer to the S29WS-K family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes


    Original     		PDF Am29BDS640G S29WS064K S29WS-K 25903C2

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS128H/ Am29BDS640H Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29BDS128H/ Am29BDS640H VBB080) Am29BDS128H/Am29BDS640H

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS128H/ Am29BDS640H Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29BDS128H/ Am29BDS640H Am29BDS128H/Am29BDS640H

    FSC093

    Abstract: No abstract text available
    Text: PRELIMINARY Am42BDS640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)


    Original     		PDF Am42BDS640AG Am29BDS640G 16-Bit) 93-Ball FSC093

    Am29N643

    Abstract: n643 marking
    Text: ADVANCE INFORMATION Am29BDS643G 64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O


    Original     		PDF Am29BDS643G 16-Bit) Am29N643 n643 marking

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)


    Original     		PDF Am42BDS6408G Am29BDS640G 16-Bit) 93-Ball

    Am29BDS323D

    Abstract: No abstract text available
    Text: Am29BDS323D: Ultra Performance Flash Application Note by Bushra Haque The Am29BDS323D burst mode flash memory device represents AMD’s unique solution to the customer’s high performance, low voltage needs. The Am29BDS323D is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device,


    Original     		PDF Am29BDS323D

    FDD047

    Abstract: SA70 SA71
    Text: Am29BDS323D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


    Original     		PDF Am29BDS323D FDD047 SA70 SA71