Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3R31 0D321b2 fl25 • APX Preliminary specification 2 GHz RF power transistor BLT11 — N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation
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bbS3R31
0D321b2
BLT11
OT103
BLT11
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PDF
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500N50
Abstract: t72 marking BAW62 sot23 Philips MARKING CODE BAS55 BAW62
Text: oosmsti mtü « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode — N AMER PHILIPS/DISCRETE DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching
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BAS55
bbS3T31
BAS55
BAW62
500N50
t72 marking
BAW62 sot23
Philips MARKING CODE
BAW62
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE T> bb53R31 DD2bR44 &E5 HAPX Philips Semiconductors Product specification Silicon planar epitaxial BAL74W high-speed diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High switching speed Vr MAX. UNIT continuous reverse
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bb53R31
DD2bR44
BAL74W
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PDF
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B41 diode smd
Abstract: smd diode marking 2H smd diode M4 smd diode a7 2bcj smd diode code A7 smd marking m4 BAV99W DIODE smd marking M4 DIODE smd marking A7
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 OOSb'ni Philips Semiconductors b41 * A P X Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV99W QUICK REFERENCE DATA
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BAV99W
OT323
B41 diode smd
smd diode marking 2H
smd diode M4
smd diode a7
2bcj
smd diode code A7
smd marking m4
BAV99W
DIODE smd marking M4
DIODE smd marking A7
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PDF
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Untitled
Abstract: No abstract text available
Text: bhsa^ai QQ242S4 S13 • APX Philips Semiconductors — — N AMER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications.
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OCR Scan
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QQ242S4
BAL99
7Z690B6
BAW62
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE J> bbSBRBl QQEbRSD 02R • APX Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed BAL99W QUICK REFERENCE DATA SYMBOL Epitaxial high-speed switching diode
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BAL99W
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PDF
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motorola transistor 5331
Abstract: BFQ268
Text: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to
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bbS3T31
DD317bÃ
BFQ268;
BFQ268/I
BFQ268
OT172A1)
BFQ268/I
OT172A3
motorola transistor 5331
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PDF
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BF0232
Abstract: BFQ232A BFQ232 BA 751 s BFQ252 BFQ252A UBB434
Text: Philips Semiconductors m bbS3R31 QD31704 721 ^HAPX NPN 1 GHz video transistors £ N AMER DESCRIPTION Product specification BFQ232; BFQ232A PHILIPS/DISCRETE b'JE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a
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Q3170Ã
BFQ232;
BFQ232A
O-126)
BFQ252
BFQ252A
BFQ232A
BF0232
BFQ232
BA 751 s
UBB434
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE D • bb53R31 ODEbTflS 346 W A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV70W QUICK REFERENCE DATA
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bb53R31
BAV70W
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE hTE bbS3T31 □DE'inb b4fl D Product specification Philips S em iconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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bbS3T31
BLV99/SL
OT172D
PINNING-SOT172D
7Z94684
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification bbSB'lBl DOBSlbD TST H A P X 2 GHz RF pow er transistor BLT10 N AMER PHILIPS/DISCRETE b'lE D DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation in handheld radio equipment at
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BLT10
OT103
BLT10
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors H bbS3T31 DDSMbTfl 47T H A P X N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Preliminary specification b?E P BF753 FEATURES • Low cost • Low noise figure • 5 V tuner applications. DESCRIPTION NPN silicon planar epitaxial
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bbS3T31
BF753
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PDF
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philips MATV amplifiers
Abstract: CIL TRANSISTOR BFG621 PH* SOT223 transistor
Text: Philips Semiconductors 1^53^31 00314b7 IbT M APX Objective specification NPN 8 GHz wideband transistor BFG621 N AMER PHILIPS/DISCRETE FEATURES b'îE ]>' PINNING PIN • Low distortion DESCRIPTION • Gold metallization ensures excellent reliability 1 emitter
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00314b7
BFG621
BFG621
OT223
35K/W
philips MATV amplifiers
CIL TRANSISTOR
PH* SOT223 transistor
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PDF
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philips bfq
Abstract: BFQ253A BFQ233 BFQ233A BFQ253
Text: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a
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03173b
BFQ253;
BFQ253A
BFQ233
BFQ233A
fcj53131
BFQ253A
philips bfq
BFQ253
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency
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bbS3T31
D0314T7
BFP540
OT173X)
BFP540
OT173
OT173X
RE120
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PDF
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Untitled
Abstract: No abstract text available
Text: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency
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OCR Scan
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QQE5Q33
BFG541
OT223.
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PDF
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philips 4859
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency
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bbS3T31
D05SB11
BFR505
BFR505
philips 4859
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PDF
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BLV100
Abstract: itt 2222 ITT 232-2 ITT 2222 npn ITT 2222 A
Text: Philips Sem iconductors bbS3*ì31 □□ET2D3 bdfi * APX BLV100 UHF power transistor •N AMER PHILIPS/DISCRETE b'ìE D PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile
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BLV100
OT171
-SOT171
MBB012
MBA931-1
BLV100
itt 2222
ITT 232-2
ITT 2222 npn
ITT 2222 A
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PDF
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Untitled
Abstract: No abstract text available
Text: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS
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bbS3R31
1PS184
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PDF
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Untitled
Abstract: No abstract text available
Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband
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BFG135
OT223
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PDF
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bf0252a
Abstract: philips bfq BFQ252A bf0252 BFQ232 BFQ232A BFQ252
Text: Philips S em iconductors 0 D 31731 bbSBTBl PNP 1 GHz video transistors ^ • ^ N DESCRIPTION 7S 7 APX Product specification BFQ252; BFQ252A b*îE J> AMER PHILIPS/DISCRETE PINNING PNP Silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a
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OCR Scan
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O-126)
BFQ232
BFQ232A
BFQ252;
BFQ252A
bbS3T31
MBB448
bf0252a
philips bfq
BFQ252A
bf0252
BFQ252
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE T> bbS3T31 D0271D? 5^6 H A P X Preliminary specification Philips Semiconductors 1PS226 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. MAX.
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bbS3T31
D0271D?
1PS226
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b bS3 T3 i ooa^abs oaa APX Objective specification UHF power transistor BLV946 AMER PHILIPS/DISCRETE b'lE » QUICK REFERENCE DATA FEATURES • Double internal input matching for easy matching and high gain • Poly-silicon emitter ballasting
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BLV946
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PDF
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Untitled
Abstract: No abstract text available
Text: b h S B 'lB l Philips Semiconductors 002^230 b 3b M l APX Product specification UHF power transistor BLV193 'N AMER PHILIPS/DISCRETE FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
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BLV193
MRAS57
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PDF
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