AMP. MOSFET 500 WATT Search Results

AMP. MOSFET 500 WATT Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

AMP. MOSFET 500 WATT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AN569 Abstract: MTP1N50E mtp1n Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	MTP1N50E r14525 MTP1N50E/D AN569 MTP1N50E mtp1n	PDF
Untitled Abstract: No abstract text available Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	MTP1N50E O-220 r14525 MTP1N50E/D	PDF
1N50E Abstract: t1n50e MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 T1-N50E Text: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage	Original	MTD1N50E r14525 MTD1N50E/D 1N50E t1n50e MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 T1-N50E	PDF
t1n50e Abstract: 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310 Text: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage	Original	MTD1N50E r14525 MTD1N50E/D t1n50e 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310	PDF
transistor 1 j42 Abstract: transistor j42 nj TRANSISTOR 2L43 UF281 Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation	Original	UF281 lF281OP transistor 1 j42 transistor j42 nj TRANSISTOR 2L43	PDF
UF28156 Abstract: UF2815B L5 mosfet Text: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation	Original	UF28156 270pf 82Opf lx28158 UF28156 UF2815B L5 mosfet	PDF
3F TRANSISTOR Abstract: F2801 Text: XY an AMP company r = RF MOSFET Power Transistor, 100 - 500 MHz 1 W, 28V UF2801 KI v2.00 Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Lower Noise Floor l 100 MHz to 500 MHz Operation l Common Source TO39 Package Configuration	Original	UF2801 F2801 3F TRANSISTOR	PDF
Transistor Equivalent list Abstract: "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, 5W, 28V UF2805B A B E Features l N-Channel Enhancement l DUOS Structure l Lower Capacitances Mode Device for Broadband v2.00 Operation 0 Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation	Original	UF2805B 68Dpf 82Opf Transistor Equivalent list "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos	PDF
transistor v2w Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240 Text: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor	Original	LF281 rt-l-970' transistor v2w transistor C 2240 TRANSISTOR 500 PL031 TT 2240	PDF
UF284OP Abstract: No abstract text available Text: an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF284OP Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor . . Absolute Maximum Ratings at 25°C	Original	UF284OP lOOW42SV. wlF25oNNsmr-RmDco~ lsTum5ra22AvGvw UF284OP	PDF
UF2815OJ Abstract: No abstract text available Text: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C	Original	UF2815OJ -65to UF2815OJ	PDF
pulse transformer bv 070 Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer Text: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation	Original	UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer	PDF
25 ohm semirigid Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400 Text: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l	Original	UF2840G 1000pF t-500pF 25 ohm semirigid capacitor 50uf UF2840G resistor 1.2k capacitor J 400	PDF
IRF450 Abstract: mosfet IRF450 Text: PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 12 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate	OCR Scan	670-SSDI SFF450i IRF450 25q9c F00095 mosfet IRF450	PDF

UF28100M Abstract: UF281OOM Amp. mosfet 500 watt ISS135 S80E Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C	Original	UF281 73XD1B2-03 UF28100M UF281OOM Amp. mosfet 500 watt ISS135 S80E	PDF
diode A249 Abstract: 2E12 3E12 SFFD450M SFFR450M frf450 irfm7450 Text: S I PRELIMINARY SFFR450M SFFD450M SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 10 AMP 500 VOLTS 0.60 Q RADIATION HARDENED N-CHANNEL MOSFET # Designer’s Data Sheet FEATURES: SFFR450M: 100KRad(Si) Gamma	OCR Scan	670-SSDI IRFM7450/8450, FRF450 SFFR450M SFFD450M diode A249 2E12 3E12 SFFD450M irfm7450	PDF
IRF430 Abstract: No abstract text available Text: PRELIMINARY SFF430/5 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 4.5 AMP 500 VOLTS Designer’s Data Sheet 1.6 Q N-CHANNEL POWER MOSFET FEATURES: Rugged construction with polysilicon gate	OCR Scan	670-SSDI SFF430/5 IRF430	PDF
mosfet 24n50 Abstract: No abstract text available Text: SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 24 AMP / 500 Volts 0.2 Ω N-Channel Power MOSFET DESIGNER’S DATA SHEET Features:	Original	SFF24N50/3 SFF24N50/3T IXTH24N50 F00175E mosfet 24n50	PDF
mosfet 24n50 Abstract: mosfet 24n50 transistor equivalent IXTH24N50 SSDI SFF Text: SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 24 AMP / 500 Volts 0.2 Ω N-Channel Power MOSFET DESIGNER’S DATA SHEET Features:	Original	SFF24N50/3 SFF24N50/3T IXTH24N50 Rating125 F00175E mosfet 24n50 mosfet 24n50 transistor equivalent SSDI SFF	PDF
IRF430 Abstract: No abstract text available Text: SsDII PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 4.5 AMP 500 VOLTS 1.6 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate	OCR Scan	670-SSDI IRF430 Volta50	PDF
IRF440 Abstract: SFF440C 0-85Q Text: Sspii PRELIMINARY SFF440C SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■	OCR Scan	670-SSDI SFF440C IRF440 O-254C O-254 F00093 SFF440C 0-85Q	PDF
IRF450 Abstract: ID72 Text: PRELIMINARY SFF450/61 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 13 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■ ■	OCR Scan	670-SSDI SFF450/61 IRF450 ID72	PDF
IRF440 Abstract: SFF440M Text: PRELIMINARY A SFF440M /SFF440Z SOLID STATE DEVICES, INC — 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate	OCR Scan	670-SSDI IRF440 SFF440M /SFF440Z O-254 O-254Z O-254Z	PDF
IRF440 Abstract: SFF440 Text: §s§i PRELIMINARY SFF440 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: • • • • • • •	OCR Scan	SFF440 670-SSDI IRF440 33BtJXff F00083 SFF440	PDF

AMP. MOSFET 500 WATT Search Results

AMP. MOSFET 500 WATT Result Highlights (5)

AMP. MOSFET 500 WATT Datasheets Context Search

AN569

Untitled

1N50E

t1n50e

transistor 1 j42

UF28156

3F TRANSISTOR

Transistor Equivalent list

transistor v2w

UF284OP

UF2815OJ

pulse transformer bv 070

25 ohm semirigid

IRF450

UF28100M

diode A249

IRF430

mosfet 24n50

mosfet 24n50

IRF430

IRF440

IRF450

IRF440

IRF440