microphone preamp
Abstract: preamp mic ic AN-450 LM4830 LM4830M LM4830N M24B N24A
Text: LM4830 Two-Way Audio Amplification System with Volume Control General Description Key Specifications The LM4830 is an integrated solution for two-way audio amplification. It contains a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to
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LM4830
LM4830
microphone preamp
preamp mic ic
AN-450
LM4830M
LM4830N
M24B
N24A
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2SC1223
Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and
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2SC3604
2SC3604
2SC1223
2SC2150
2SC2367
NEC NE "micro x" d
2SC2585
NEC NE "micro x"
2SC2148
NE AND micro-X
2SC2149
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AN-450
Abstract: LM4830 LM4830M LM4830N M24B N24A
Text: LM4830 Two-Way Audio Amplification System with Volume Control General Description Key Specifications The LM4830 is an integrated solution for two-way audio amplification. It contains a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to
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LM4830
LM4830
is959
AN-450
LM4830M
LM4830N
M24B
N24A
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NESG3031M05-T1-A
Abstract: NESG3031M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
NESG3031M05
NESG3031M05-T1-A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG4030M14
NESG4030M14
NESG4030M14-A
NESG4030M14-T3
NESG4030M14-T3-A
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NESG2107M33
Abstract: NESG2107M33-A NESG2107M33-T3-A A720A
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification
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NESG2107M33
NESG2107M33-T3
NESG2107M33-A
NESG2107M33-T3-A
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
A720A
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booster FM db
Abstract: transistor current booster circuit PIN photodiode ps
Text: Data sheet MiNi Block Optical Amplifier – Compact Amp Series The MiNi Block Optical Amplifier offers compact, economical amplification for a variety of applications. Available optimised as pre or booster amplifier, the module can be used for single channel or narrow band amplification in
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2SC5752
Abstract: 2SC5752-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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2SC5752
2SC5752-T1
2SC5752
2SC5752-T1
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SX8724
Abstract: XE8000 XE8000EV121 AN8725
Text: TN8000.32 ADVANCED COMMUNICATIONS & SENSING Technical Note PRELIMINARY Dealing with noise on ZoomingADC 1. Introduction 3. Linearity With its three amplification stages, the ZoomingADC is able to amplify the input signal up to 1000 times. What are the benefits of this big amplification? How can I improve the
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TN8000
ISO9001
SX8724
XE8000
XE8000EV121
AN8725
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nec japan 7812
Abstract: NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
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2SC5750
2SC5750-T1
nec japan 7812
NEC 7812
transistor NEC 7812
7812 nec
2SC5750
2SC5750-T1
7812 4pin
R54 Transistor
k 3531 transistor
TRANSISTOR IC 18751
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NESG210719
Abstract: NESG210719-T1
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.
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NESG210719
NESG210719-A
NESG210719-T1-A
NESG210719-T1
NESG210719
NESG210719-T1
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NESG270034
Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
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NESG270034
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
NESG270034
ic nec 2501
nec 2012
nec 2501
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
2012 NEC
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ne678m04-a
Abstract: 2SC5753
Text: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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NE678M04
2SC5753
NE678M04-A
2SC5753-A
NE678M04-T2-A
2SC5753-T2-A
P15659EJ1V0DS
2SC5753
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p1565
Abstract: 2SC5751
Text: NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
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NE677M04
2SC5751
NE677M04-A
2SC5751-A
NE677M04-T2-A
2SC5751-T2-A
P15657EJ1V0DS
p1565
2SC5751
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nec 14305
Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
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2SC5751
2SC5751-T2
nec 14305
14305 NEC
k 3918 TRANSISTOR
OF IC 7909
2SC5751-T2
2SC5751
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2SC5753
Abstract: nec k 813 2SC5753-T2 p1565 RF transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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2SC5753
2SC5753-T2
2SC5753
nec k 813
2SC5753-T2
p1565
RF transistor
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ic nec 2501
Abstract: NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
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NESG270034
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
ic nec 2501
NESG270034
NESG270034-T1
nec 2012
nec 2501
NESG270034-AZ
NESG270034-T1-AZ
IC MARKING 1005 5 pin
nec microwave
marking NEC rf transistor
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2sc5704
Abstract: No abstract text available
Text: NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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NE662M16
2SC5704
NE662M16-A
2SC5704-A
NE662M16-T3-A
2SC5704-T3-A
P15364EJ1V0DS
2sc5704
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
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NESG3033M14
NESG3032M14.
NESG3033M14
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
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2SC5704-T3
Abstract: 2SC5704 8822 TRANSISTOR NEC 2705
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5704
2SC5704-T3
2SC5704-T3
2SC5704
8822 TRANSISTOR
NEC 2705
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AN-450
Abstract: C1996 LM4830 LM4830M LM4830N M24B N24A
Text: LM4830 Two-Way Audio Amplification System with Volume Control General Description Key Specifications The LM4830 is an integrated solution for two-way audio amplification It contains a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to an 8X load with less than 1% THD from a 5V power
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LM4830
LM4830
AN-450
C1996
LM4830M
LM4830N
M24B
N24A
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NESG3033M14
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
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NESG3033M14
NESG3032M14.
NESG3033M14
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
PU10640EJ01V0DS
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NEC K 2500
Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
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2SC3604
2SC3604
15obots
NEC K 2500
N transistor NEC K 2500
2SC1223
transistor marking S00
2SC2367
NEC marking b
NEC PART NUMBER MARKING
2SC3603
2SC2150
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2SC2150
Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
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2SC3604
2SC3604
2SC3603
2SC2150
2SC1223
TRANSISTOR 2sC 5250
micro X
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