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    AMPLIFIER DFN 2X2 Search Results

    AMPLIFIER DFN 2X2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBEE5XV2BZ-883 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd
    LBEE5ZZ2XS-846 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.3 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TK085V60Z1 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 600 V, 30 A, 0.085 Ω@10 V, DFN 8×8 Visit Toshiba Electronic Devices & Storage Corporation
    TK165V60Z1 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 600 V, 16 A, 0.165 Ω@10 V, DFN 8×8 Visit Toshiba Electronic Devices & Storage Corporation

    AMPLIFIER DFN 2X2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING RFMD

    Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z MARKING RFMD CXE2022Z CXE2022SR inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 PDF

    Untitled

    Abstract: No abstract text available
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z PDF

    CXE2022SR

    Abstract: CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z CXE-2022Z amplifier DFN 2x2 MARKING RFMD CXE2022
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage


    Original     		CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE2022SR CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z amplifier DFN 2x2 MARKING RFMD CXE2022 PDF

    CXE-2022

    Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage


    Original     		CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE-2022 MARKING RFMD InP transistor HEMT optimum recievers 106-172 106172 PDF

    amplifier DFN 2x2

    Abstract: transistor 2x2 2x2 dfn Marking code mps
    Text: TS9006 150mA Low Noise CMOS LDO SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass 5. Output DFN 2x2 Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. Enable General Description TS9006 series is 150mA low-noise CMOS LDO especially designed for battery-power RF and wireless applications.


    Original     		TS9006 150mA OT-25 TS9006 250mV 15uVrms amplifier DFN 2x2 transistor 2x2 2x2 dfn Marking code mps PDF

    amplifier DFN 2x2

    Abstract: capacitor 47uF Marking code mps SOT-25 rf RF AMPLIFIER marking A07 TS9006 55 ic Sot-343 0.47uF LDO low drop out mps 0512
    Text: TS9006 150mA Low Noise CMOS LDO SOT-343 Pin Definition: 1. Enable 2. Ground 3. Output 4. Input 6. Output SOT-25 DFN 2x2 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass 5. Output Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. Enable General Description


    Original     		TS9006 150mA OT-343 OT-25 TS9006 250mV 15uVrms amplifier DFN 2x2 capacitor 47uF Marking code mps SOT-25 rf RF AMPLIFIER marking A07 55 ic Sot-343 0.47uF LDO low drop out mps 0512 PDF

    TS9007

    Abstract: 2x2 dfn amplifier DFN 2x2 LOW NOISE 300mA LOW DROPOUT REGULATOR sot23 Marking code mps sot-23 Marking s1 TRANSISTOR
    Text: TS9007 300mA Low Noise CMOS LDO SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass 5. Output DFN 2x2 Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. Enable SOT-23 Pin Definition: 1. Ground 2. Output 3. Input General Description The TS9007 series is 300mA ultra-low-noise LDO especially designed for battery-power RF and wireless


    Original     		TS9007 300mA OT-25 OT-23 TS9007 450mV 15uVrms 2x2 dfn amplifier DFN 2x2 LOW NOISE 300mA LOW DROPOUT REGULATOR sot23 Marking code mps sot-23 Marking s1 TRANSISTOR PDF

    sot-25

    Abstract: 2.8V REGULATOR SOT-25 sot-25 marking 2x2 dfn amplifier DFN 2x2 ceramic capacitor, .1uF rf GSM low pass filter SOT-25 rf LDO low drop out TS9007
    Text: TS9007 300mA Low Noise CMOS LDO SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass 5. Output DFN 2x2 Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. Enable General Description The TS9007 series is 300mA ultra-low-noise LDO especially designed for battery-power RF and wireless


    Original     		TS9007 300mA OT-25 TS9007 450mV 15uVrms sot-25 2.8V REGULATOR SOT-25 sot-25 marking 2x2 dfn amplifier DFN 2x2 ceramic capacitor, .1uF rf GSM low pass filter SOT-25 rf LDO low drop out PDF

    TQP3M9035

    Abstract: 4450F 4450F rogers 0 DFN triquint 2x2 dfn
    Text: TQP3M9035 High Linearity LNA Gain Block Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 2x2mm 8-lead DFN plastic package Product Features • •   • • • •


    Original     		TQP3M9035 TQP3M9035 4450F 4450F rogers 0 DFN triquint 2x2 dfn PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8901 1A ULTRA LOW DROPOUT LINEAR REGULATOR DESCRIPTION FEATURES Ultra Low Dropout - 0.2V typical at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable 0.8V Reference Voltage Fast Transient Response


    Original     		APE8901 APE8901 8901MP PDF

    isl95836

    Abstract: ISL95520 ISL95833 ISL95835 VR126 isl6262 IRS 4 Channel Integrated Class D Audio Driver IC with PWM Modulator ISL912 0/VR126 ISL91106
    Text: P WERING CONSUMER ELECTRONICS Tablets, Smartphones, Smart Watch, Notebook Computers P WERING CONSUMER The power management requirements of efficiency and power dense solutions that mobile devices are becoming more complex increase the battery life of devices and systems


    Original     		LC-114 isl95836 ISL95520 ISL95833 ISL95835 VR126 isl6262 IRS 4 Channel Integrated Class D Audio Driver IC with PWM Modulator ISL912 0/VR126 ISL91106 PDF

    8901mp

    Abstract: APE8901 APE8901X amplifier DFN 2x2 AX59 2x2 dfn esop8 amplifier DFN 2x2 gain ESOP-8
    Text: Advanced Power Electronics Corp. APE8901 1A ULTRA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTION Ultra Low Dropout - 0.2V typical at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable 0.8V Reference Voltage Fast Transient Response


    Original     		APE8901 OT-26 APE8901 8901MP M1-MP-8-G-v01 8901mp APE8901X amplifier DFN 2x2 AX59 2x2 dfn esop8 amplifier DFN 2x2 gain ESOP-8 PDF

    7805 sot23

    Abstract: 7805 to92 Datasheet superheterodyne receiver WCDMA LT5517 7805 5v TO92 7805 to92 FM Modulator 2GHz GSM project circuit LT1715 LT5502
    Text: 10.2006 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form


    Original     		WSB10K1205 7805 sot23 7805 to92 Datasheet superheterodyne receiver WCDMA LT5517 7805 5v TO92 7805 to92 FM Modulator 2GHz GSM project circuit LT1715 LT5502 PDF

    LT5526

    Abstract: LT1993-2 LT5514 LT5522 LT5524 LT5527 TS16949 LT6600-20 47DBM LTC2624
    Text: 12.2005 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form


    Original     		cornerston93) D-73230 I-20156 SE-164 WSB10K1205 LT5526 LT1993-2 LT5514 LT5522 LT5524 LT5527 TS16949 LT6600-20 47DBM LTC2624 PDF

    APE8901

    Abstract: diagram 12v power amplifier 8901mp 2x2 dfn amplifier DFN 2x2 gain
    Text: Advanced Power Electronics Corp. APE8901 1A ULTRA LOW DROPOUT LINEAR REGULATOR DESCRIPTION FEATURES Ultra Low Dropout - 0.2V typical at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable 0.8V Reference Voltage Fast Transient Response


    Original     		APE8901 APE8901 8901MP diagram 12v power amplifier 8901mp 2x2 dfn amplifier DFN 2x2 gain PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8901-HF-3 1A Ultra Low Dropout Linear Regulator Description Features Ultra Low Dropout of 0.2V typ. at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable Reference Voltage of 0.8V


    Original     		APE8901-HF-3 OT-26 APE8901 appl90 APE8901 8901MP PDF

    APE8838

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8838 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8838 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the


    Original     		150mV 100mA 200mA/channel OT-26 APE8838 APE8838 ThSOT-26 I1-N3S6-G-v00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8837 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8837 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the


    Original     		APE8837 APE8837 250mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8838 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8838 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the


    Original     		APE8838 APE8838 250mA PDF

    ceramic capacitor footprint dimension

    Abstract: APE8837 transistor 2x2 6pin 2x2 dfn TRANSISTOR MARKING CODE 1F 6PIN
    Text: Advanced Power Electronics Corp. APE8837 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8837 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the


    Original     		150mV 100mA 200mA/channel OT-26 APE8837 APE8837 ThT-26 I1-N3S6-G-v00 ceramic capacitor footprint dimension transistor 2x2 6pin 2x2 dfn TRANSISTOR MARKING CODE 1F 6PIN PDF

    amplifier DFN 2x2 gain

    Abstract: No abstract text available
    Text: AP1110 2.4~2.5 GHz Power Amplifier 2004.12.21 Preliminary AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT Bluetooth Class1 applications.


    Original     		AP1110 AP1110 23dBm 150mA 23dBm -33dBc amplifier DFN 2x2 gain PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8837 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION ▓ Input Voltage Range : 2.5V to 6V The APE8837 is a high accurately, low noise, high ▓ Varied Fixed Output Voltage Combinations ripple rejection ratio, low dropout, dual CMOS LDO


    Original     		APE8837 APE8837 200mV 200mA 200mA/channel PDF

    DC MOTOR CONTROL THROUGH PWM USING IC 555 48v 1a

    Abstract: ISL6730 IRS 4 Channel Integrated Class D Audio Driver IC with PWM Modulator R/MOSFET IRS 630 Datasheet ISL21060
    Text: P WERING INDUSTRIAL General-Purpose Factory Automation, Test and Measurement Systems, Building & Home, Energy Generation, Medical Devices and Programmable Logic Controllers P WERING INDUSTRIAL With industry-leading technology in power data acquisition processes utilize sensors and


    Original     		LC-115 DC MOTOR CONTROL THROUGH PWM USING IC 555 48v 1a ISL6730 IRS 4 Channel Integrated Class D Audio Driver IC with PWM Modulator R/MOSFET IRS 630 Datasheet ISL21060 PDF

    NCP1522

    Abstract: NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501
    Text: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging


    Original     		OT-553, BRD8026-2 BRD8026/D NCP1522 NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501 PDF