TAMP-960LN
Abstract: MICROWAVE tower specification sheet
Text: Application Note GSM-EDGE Performance vs. Output Power TAMP-960LN+ AN-60-044 GSM-EDGE Drop-In Low Noise Amplifier Module Mini-Circuits TAMP-960LN+ Ultra-low Noise Drop-In Amplifier Module is an ideal low noise amplifier for use in GSM-EDGE Base Station or Tower Mounted Low Noise Applications. The
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TAMP-960LN+
AN-60-044
AN-60-044
M125464
AN60044
TAMP-960LN
MICROWAVE tower specification sheet
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE - AWT0908 AWT0908 Power Amplifier for GSM Phones Introduction This application note describes the use of ANADIGICS AW T0908 Single Supply, GSM Band, Power Amplifier . The AW T0908 is specifically designed for GSM Cellular handset applications. The 28-pin SOIC package allows
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AWT0908
T0908
T0908
28-pin
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Untitled
Abstract: No abstract text available
Text: LMV242 LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller Literature Number: SNWS014B LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier PA controller intended for
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LMV242
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SNWS014B
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power
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AWT0908
AWT0908X
AWT0908
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The A W T0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply
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AWT0904
T0904
AWT0904
100nF
470pF
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power
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AWT0908
AWT0908X
T0908
80MIL
330MIL
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
CGY2010G
MGB764
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HF power amplifier
Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
PCA5075
SA1620.
711062b
HF power amplifier
ze 003 ic
CGY2010G
LQFP48
LQFP64
LQFP80
PCA5075
SA1620
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply High Output Power
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AWT0904
AWT0904
100nF
470pF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 12 Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45%
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PCA5075
SA1620.
SCA50
647021/1200/01/pp12
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gsm signal amplifier
Abstract: gsm amplifier AWG171638-1 C406506576 172165-1
Text: m at&t Preliminary Data Sheet March 1993 Microelectronics GSM Low-Noise Amplifier Features Description • Frequency range from 890 MHz to 915 MHz AT&T’s GSM Low-Noise Amplifier was specially designed for applications in GSM base station receivers and operates in a frequency range from
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005002b
001370b
C406506576
05002b
gsm signal amplifier
gsm amplifier
AWG171638-1
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172165-1
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U244
Abstract: 800MHz gsm Handset Circuit Diagram block diagram for automatic room power control RF2123 schematic diagram 48v dc charger automatic room power control applications LA 7625 schematic diagram 50 VDC POWER SUPPLY 6v battery charger circuit diagram schematic diagram 48v charger
Text: RFI RF2123 MICRO-DEVICES GSM POWER AMPLIFIER T yp ica l A p plicatio ns • 4.8V GSM Cellular Handsets Commercial and Consumer Systems • 6V GSM Cellular Handsets Portable Battery Powered Equipment < cc Product Description .158 .150 The RF2123 is a high power, high efficiency amplifier IC.
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RF2123
RF2123
800MHz
950MHz
T004131
100pF
U244
800MHz gsm Handset Circuit Diagram
block diagram for automatic room power control
schematic diagram 48v dc charger
automatic room power control applications
LA 7625
schematic diagram 50 VDC POWER SUPPLY
6v battery charger circuit diagram
schematic diagram 48v charger
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PCF5078T
Abstract: PCF5078 VS218
Text: INTEGRATED CIRCUITS DATA SHEET PCF5078 Power amplifier controller for GSM and PCN systems Product specification File under Integrated Circuits, IC17 1999 Apr 12 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems
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PCF5073x
SCA63
465008/00/01/pp20
PCF5078T
PCF5078
VS218
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philips 561
Abstract: PCF5077T SSOP16 BGY2
Text: INTEGRATED CIRCUITS DATA SHEET PCF5077T Power amplifier controller for GSM and PCN systems Preliminary specification File under Integrated Circuits, IC17 1997 Nov 19 Philips Semiconductors Preliminary specification Power amplifier controller for GSM and PCN systems
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SCA56
437027/1200/01/pp24
philips 561
PCF5077T
SSOP16
BGY2
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gsm signal Booster
Abstract: gsm signal amplifier gsm Booster GSM max power diagram DML Microwave gsm power amplifiers 10 w 1702 gsm booster circuit circuit booster gsm md68
Text: 27223 DML Microwave 4/7/01 1:51 pm Page 5 GSM P.A. 10 W BOOSTER AMPLIFIER EXTENDS POWER CAPABILITY OF GSM MICROCELL BASE STATIONS GENERAL INFORMATION ADVANTAGES The MCE DML Microwave Booster Amplifier increases the power capability of GSM Microcell Base Stations up to 10. The product is compact
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RF5110
Abstract: RF5111 GSM900
Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS
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025mm
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GSM900
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RF2173
Abstract: No abstract text available
Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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950MHz
203mm
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025mm
RF2173)
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CGY2013G
Abstract: LQFP48 PCA5075 SA1620 SMD0603
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
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CGY2013G
PCA5075
SA1620.
CGY2013G
711032t
010b027
LQFP48
PCA5075
SA1620
SMD0603
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fca173
Abstract: h2lb FCA175 BA891 CGY2014TT philips rf manual HTSSOP20
Text: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits, IC17 2000 Oct 16 Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES
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403506/02/pp16
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h2lb
FCA175
BA891
philips rf manual
HTSSOP20
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RF5111
Abstract: GSM900 RF5110 SiGe BiCMOS transistor bias block generator shunt PFC915
Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS
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950MHz
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GSM900
SiGe BiCMOS transistor bias block generator shunt
PFC915
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RF2173
Abstract: IPC-SM-782 RF2174 030514
Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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RF2173
800MHz
950MHz
203mm
330mm
025mm
RF2173)
IPC-SM-782
RF2174
030514
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c1533
Abstract: No abstract text available
Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description 1 2 The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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950MHz
36dBm.
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c1533
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AWT6223
Abstract: duplex filter wcdma frontend
Text: Application Note WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control Revision 0 RELEVANT PRODUCTS • AWT6223 INTRODUCTION GENERAL DESCRIPTION This WEDGE Power Amplifier Module supports GSM type dual, tri and quad band applications for GMSK
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duplex filter
wcdma frontend
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2-bit comparator
Abstract: PCF5075 SSOP20 BAS70-07
Text: INTEGRATED CIRCUITS DATA SHEET PCF5075 Power amplifier controller for GSM and PCN systems Product specification Supersedes data of 1996 Feb 15 File under Integrated Circuits, IC17 1997 Feb 27 Philips Semiconductors Product specification Power amplifier controller for GSM and
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Dat31
SCA53
437027/1200/03/pp28
2-bit comparator
PCF5075
SSOP20
BAS70-07
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