LM358F
Abstract: amplifier K743 marking 43 amplifier marking _1
Text: SEMICONDUCTOR LM358F MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking 2. Marking No. 2007. 12. 17 1 LM358F 2 K 743 3 Item Marking Description Device Name LM358F Dual Operational Amplifier Trade Name K KEC CORP Lot No. 743 Revision No : 0
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LM358F
LM358F
amplifier
K743
marking 43
amplifier marking _1
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Untitled
Abstract: No abstract text available
Text: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)
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MMBT5088
MMBT5089
MMBT5088)
MMBT5089)
OT-23
QW-R206-033
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount Pb-Free Package is available. LMSD601–RLT1G LMSD601–SLT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMSD601-RLT1G YR 3000/Tape&Reel LMSD601-RLT3G YR
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LMSD601â
LMSD601-RLT1G
3000/Tape
LMSD601-RLT3G
10000/Tape
LMSD601-SLT1G
LMSD601-SLT3G
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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Q62702G72
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smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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BFR90 transistor
Abstract: BFR90 telefunken ha 680 BFR90 amplifier BFR90S
Text: Temic BFR90 Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR90 Marking: BFR90 Plastic case TO 50
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BFR90
BFR90
24-Mar-97
BFR90 transistor
telefunken ha 680
BFR90 amplifier
BFR90S
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93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
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MW-16
GPW05969
93 ab chip
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING SOT-523
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MMBT2222A
500mA.
OT-523
MMBT2222AL
MMBT2222A-AN3-R
MMBT2222AL-AN3-R
QW-R221-014
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BFR92R
Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
Text: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23
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BFR92/BFR92R
BFR92
BFR92R
26-Mar-97
sot 23 transistor 70.2
MAR 641 TRANSISTOR
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5252 F ic
Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
Text: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65
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D-74025
5252 F ic
BFQ 540 application
IC 7560
transistor BFQ 263
5252 F 1009
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transistor mar 823
Abstract: BFR91A BFR91A transistor MAR 637 transistor BFR91A MAR 747
Text: Tem ic BFR91A Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR91A Marking: BFR91A Plastic case TO 50
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BFR91A
BFR91A
24-Mar-97
transistor mar 823
BFR91A transistor
MAR 637
transistor BFR91A
MAR 747
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MBC13720
Abstract: MBC13720T1 low noise amplifier 0947
Text: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking
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MBC13720/D
MBC13720
OT-363)
MBC13720T1
OT-363
MBC13720
MBC13720T1
low noise amplifier 0947
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MAR 618 transistor
Abstract: MAR 641 TRANSISTOR bfr96ts MAR 527 transistor L 0403 817
Text: Temic BFR96TS Semiconductor i Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96TS Marking: BFR96TS Plastic case ~ TO 50
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BFR96TS
BFR96TS
26-Mar-97
MAR 618 transistor
MAR 641 TRANSISTOR
MAR 527 transistor
L 0403 817
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UTC 225
Abstract: No abstract text available
Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE
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MMBT2222A
500mA.
OT-23
QW-R206-019
UTC 225
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BFR90A
Abstract: No abstract text available
Text: BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case TO 50
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BFR90A
BFR90A
D-74025
17-Apr-96
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BFR96TS
Abstract: No abstract text available
Text: BFR96TS Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96TS Marking: BFR96TS Plastic case TO 50
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BFR96TS
BFR96TS
D-74025
31-Jul-96
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Untitled
Abstract: No abstract text available
Text: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT4403
MMBT4403
500mA.
OT-23
QW-R206-034
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BFR91A
Abstract: Transistor BFR 91 Transistor BFR 90 application BFR91A transistor RF S-parameters
Text: BFR 91 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91A Marking Plastic case XTO 50
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BFR91A
D-74025
Transistor BFR 91
Transistor BFR 90 application
BFR91A transistor
RF S-parameters
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BFR 970
Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50
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BFR96TS
D-74025
BFR 970
Transistor BFR 96
Bfr 910
Transistor BFR 90 application
Transistor BFR 559
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BFR96
Abstract: BFR96T
Text: BFR96T Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96T Marking: BFR96T Plastic case TO 50
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BFR96T
BFR96T
D-74025
17-Apr-96
BFR96
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STC945
Abstract: STC733 "Small Signal Amplifier" 10K1 transistor stc945
Text: STC733 PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with STC945 Ordering Information Type NO. Marking
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STC733
STC945
KST-9074-000
-100mA,
-10mA
STC945
STC733
"Small Signal Amplifier"
10K1
transistor stc945
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pnp 2f
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
pnp 2f
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MMBT4401
Abstract: MMBT4401 UTC
Text: UTC MMBT4401 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2X SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT4401
MMBT4401
500mA.
OT-23
QW-R206-035
MMBT4401 UTC
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Untitled
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
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