SMD MARKING CODE 071 A01
Abstract: smd code 38P LGA 1155 PIN diagram MARKING CODE SMD IC A08 L QUAD Aluminum nitride smd marking m05 LGA 1155 Socket PIN diagram pitch 0.4 QFP 256p marking code smd fujitsu Texas Instruments epoxy Sumitomo
Text: To Top Contents Safety Precautions 1 Introduction to Packages 1.1 Overview 1.2 Package Lineup 1.3 Package Forms 1.4 Package Structures 1.5 How Package Dimensions Are Indicated 1.6 Package Codes 1.7 Marking 1.8 Future Trends in Packages 2 Package Mounting Methods
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LCC-26P-M09
LCC-28P-M04
LCC-28P-M05
LCC-28P-M06
LCC-28P-M07
LCC-28C-A04
LCC-32P-M03
LCC-40P-M01
LCC-42P-M01
SMD MARKING CODE 071 A01
smd code 38P
LGA 1155 PIN diagram
MARKING CODE SMD IC A08
L QUAD Aluminum nitride
smd marking m05
LGA 1155 Socket PIN diagram
pitch 0.4 QFP 256p
marking code smd fujitsu
Texas Instruments epoxy Sumitomo
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varactor 650 manual
Abstract: X3C06A4-03S variable phase shifter 100 Mhz Model 430 X3C19 180 degree 3dB coupler 180 Degree hybrid Xinger
Text: ` Model X3C06A4-03S Rev A Hybrid Coupler 3 dB, 90 Description The X3C06A4-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for 450MHz band and DTV applications. The
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X3C06A4-03S
X3C06A4-03S
450MHz
RF-35,
RO4003
varactor 650 manual
variable phase shifter 100 Mhz
Model 430
X3C19
180 degree 3dB coupler
180 Degree hybrid Xinger
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varactor 650 manual
Abstract: No abstract text available
Text: ` Model X3C06A4-03S Rev A Hybrid Coupler 3 dB, 90 Description The X3C06A4-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for 450MHz band and DTV applications. The
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X3C06A4-03S
X3C06A4-03S
450MHz
450/NMT/CDMA
varactor 650 manual
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XCO450E-20
Abstract: RO4350 properties Anaren rfp 50 ohm resistor 070-014
Text: Model XC0450E-20S Rev D 20 dB Directional Coupler Description The XC0450E-20S is a low profile, high performance 20dB directional coupler in a new easy to use, manufacturing friendly surface mount package. The XC0450E-20S is designed particularly for power and
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XC0450E-20S
XC0450E-20S
RF-35,
RO4350
XCO450E-20
RO4350 properties
Anaren rfp 50 ohm resistor
070-014
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XCO450E-03
Abstract: hybrid coupler 3dB 180 RO4350 properties RF35 RO4350 90 Deg Hybrid Couplers XC0450E-03
Text: Model XC0450E-03S Rev D Hybrid Coupler 3 dB, 90° Description The XC0450E-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. The XC0450E-03S is designed particularly for balanced power and low noise
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XC0450E-03S
XC0450E-03S
RF-35,
RO4350
XCO450E-03
hybrid coupler 3dB 180
RO4350 properties
RF35
RO4350
90 Deg Hybrid Couplers
XC0450E-03
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Untitled
Abstract: No abstract text available
Text: Model XC0450B-30S Rev A 30 dB Directional Coupler t Description The XC0450B-30S is a low profile, high performance 30dB directional coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for AMPS band applications. The XC0450B-30S is
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XC0450B-30S
XC0450B-30S
RF-35,
RO4350
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Datasheet of IC 7432
Abstract: 7415 ic pin details data sheet IC 7432 DATASHEET OF IC 7401 7401 ic configuration IC 7409 draw pin configuration of ic 7402 INFORMATION OF IC 7424 BGA and QFP Package mounting EIA and EIAJ standards
Text: CHAPTER 1 CHAPTER 1 1.1 PACKAGE OUTLINES AND EXPLANATION PACKAGE OUTLINES AND EXPLANATION Types of Packages 1.1.1 Classification of IC packages The following figure classifies the packages for semiconductor products: SDIP DIP QUIP SIP ZIP Through hole mount type
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AN-450 surface mounting methods
Abstract: No abstract text available
Text: THERMISTOR SENSOR ASSEMBLY FI EN NCW OA LR! PE LO E CR TAR OT NE ICD S DESIGN AND CONSTRUCTION CONSIDERATIONS The design considerations for Thermistor Sensor Assemblies can be divided into two broad categories: Mechanical or Physical considerations and Electrical considerations.
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Untitled
Abstract: No abstract text available
Text: THERMISTOR SENSOR ASSEMBLY •■ DESIGN AND CONSTRUCTION CONSIDERATIONS ■ ■ F E N W A L Z E L E C T R O N IC S NTC / PTC Thermistors 2. The design considerations for Thermistor Length of exposure and corrosive media. Sensor Assemblies can be divided into two
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hybrid coupler 3dB 180
Abstract: RF35 RO4350 XC0450A-03 XC0450A-03P
Text: Model XC0450A-03 Rev B Hybrid Coupler 3 dB, 90° Description The XC0450A-03 is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for NMT band applications. The XC0450A-03 is designed
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XC0450A-03
XC0450A-03
RF-35,
RO4350,
hybrid coupler 3dB 180
RF35
RO4350
XC0450A-03P
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Untitled
Abstract: No abstract text available
Text: Model XC0450A-03 Rev A Hybrid Coupler 3 dB, 90°° Description The XC0450A-03 is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for NMT band applications. The XC0450A-03 is designed
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XC0450A-03
XC0450A-03
RF-35,
RO4350,
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MARKING G5D
Abstract: HS350 PG2314T5N
Text: GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2314T5N
PG2314T5N
MARKING G5D
HS350
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MARKING G5D
Abstract: PG2314T5N defects NEC 0745 PG10624EJ02V0DS HS350 Bluetooth class 1
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2314T5N
PG2314T5N
MARKING G5D
defects
NEC 0745
PG10624EJ02V0DS
HS350
Bluetooth class 1
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UPG2250T5N
Abstract: uPG2250 UPG2250T5N-E2A UPG2250T5N-E2-A J0123
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2250T5N 1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power.
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PG2250T5N
PG2250T5N
UPG2250T5N
uPG2250
UPG2250T5N-E2A
UPG2250T5N-E2-A
J0123
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Untitled
Abstract: No abstract text available
Text: GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed
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PG2314T5N
PG2314T5N
PG10624EJ02V0DS
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ITW CB4
Abstract: 106K100CB4G itw cs4 405K100CB4 cb4g 405K100CB4G 106K050CS4G 106K100CS4G capacitor 20mf capacitor smd 106
Text: Type CB4 Capstick Capacitor Metallized Polyester PET Dielectric Second Generation High Frequency Switching Power Supply Capacitors Capacitor Type Cb4 • • • • Ideal for 48 volt bus input & output Low impedance (ESR/ESL) construction Self healing—Avoids shorts
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100KHz
100KHz
10MHz
10KHz
100Hz
ITW CB4
106K100CB4G
itw cs4
405K100CB4
cb4g
405K100CB4G
106K050CS4G
106K100CS4G
capacitor 20mf
capacitor smd 106
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PG2250T5N-E2
Abstract: PG2250T5N MARKING G5C PG10639EJ03V0DS
Text: GaAs INTEGRATED CIRCUIT PG2250T5N 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power.
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PG2250T5N
PG2250T5N
PG10639EJ03V0DS
PG2250T5N-E2
MARKING G5C
PG10639EJ03V0DS
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12x12 bga thermal resistance
Abstract: SZZA005 micro pitch BGA A113 TMS320VC549 TMS320VC549GGU BGA Ball Crack
Text: Application Report 1998 MicroStar BGA Printed in U.S.A 11/98 SZZA005 MicroStar BGA Semiconductor Group Package Outline Application Report Kevin Lyne and Charles Williams Prepared by: Tanvir Raquib SZZA005 November 1998 Printed on Recycled Paper IMPORTANT NOTICE
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SZZA005
thoseI1450
12x12 bga thermal resistance
SZZA005
micro pitch BGA
A113
TMS320VC549
TMS320VC549GGU
BGA Ball Crack
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Untitled
Abstract: No abstract text available
Text: OMEGALUX PREMIUM QUALITY STRIP HEATERS Resistor wire is embedded in specially formulated, high-grade refractory material which both insulates the resistor and transfers heat rapidly to the sheath. High quality, coiled alloy resistor wire is uniformly spaced over the width and length of
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rust-res02
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SMD code F89
Abstract: LXF CHEMI-CON old Nippon Chemi-Con KMQ NIPPON CHEMI-CON CAPACITORS SM series Nippon Chemi-Con km tr no 25b16 GE capacitors 180mf Nippon Chemi-Con sxc EKMH201LGC103MEC0M gx SERIES NIPPON CHEMI-CON
Text: ALUMINUM ELECTROLYTIC CAPACITORS SCREW MOUNT TERMINAL TYPE ALUMINUM ELECTROLYTIC CAPACITORS CAT. No. E1001K INDEX SERIES TABLE PRODUCT SEARCH GROUP CHART PRECAUTIONS AND GUIDELINES Aluminum Electrolytic Capacitor PART NUMBERING SYSTEM PRODUCT GUIDE ENVIRONMENTAL CONSIDERATION
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E1001K
SMD code F89
LXF CHEMI-CON old
Nippon Chemi-Con KMQ
NIPPON CHEMI-CON CAPACITORS SM series
Nippon Chemi-Con km
tr no 25b16
GE capacitors 180mf
Nippon Chemi-Con sxc
EKMH201LGC103MEC0M
gx SERIES NIPPON CHEMI-CON
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Untitled
Abstract: No abstract text available
Text: Turbidity Analyzers Model TRCN-96 ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ Four Relays Two 4-20 mA dc Outputs NEMA-4X Menu Guided Operation Multiple Language Prompts English, German, French and Spanish Built-In Advanced System Diagnostics Long-Lasting LED Light Source
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TRCN-96
TRCN-96-CE
TRCN-96-PM
TR-8220
TRCN-96
TRCN-96,
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SO14W
Abstract: siemens rotating diode assembly SO24W MELF 0207 PLCC20 SO16W SO20W SO28W VSO40 VSO56
Text: Data Pack H Issued November 2005 1502325569 An introduction to surface mounting Data Sheet What is surface mounting? What are SMDs? In conventional board assembly technology the component leads are inserted into holes through the PCB and connected to the solder pads by wave soldering
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Untitled
Abstract: No abstract text available
Text: Model X3C22E1-03S Rev A PRELIMINARY Hybrid Coupler 3 dB, 90 Description The X3C22E1-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for DCS and PCS band applications. The X3C22E1-03S is designed
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X3C22E1-03S
X3C22E1-03S
481-D
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Untitled
Abstract: No abstract text available
Text: GaAs INTEGRATED CIRCUIT PG2250T5N 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power.
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PG2250T5N
PG2250T5N
PG10639EJ03V0DS
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