2SJ168
Abstract: 2SK1062 Toshiba 2SJ
Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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2SJ168
2SK1062
2SJ168
2SK1062
Toshiba 2SJ
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PDF
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2SK106
Abstract: 2SJ168 2SK1062 Toshiba 2SJ
Text: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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Original
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2SK1062
2SJ168
2SK106
2SJ168
2SK1062
Toshiba 2SJ
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PDF
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2SJ168
Abstract: 2SK1062
Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. · High forward transfer admittance: |Yfs| = 100 mS (min)
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Original
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2SJ168
2SK1062
2SJ168
2SK1062
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PDF
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2SK1062
Abstract: 2SJ168
Text: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. · High forward transfer admittance: |Yfs| = 100 mS (min)
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Original
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2SK1062
2SJ168
2SK1062
2SJ168
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PDF
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Toshiba 2SJ
Abstract: No abstract text available
Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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Original
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2SJ168
2SK1062
SC-59
Toshiba 2SJ
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PDF
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Untitled
Abstract: No abstract text available
Text: Device Engineering Incorporated 385 East Alamo Drive Chandler, AZ 85225 Phone: 480 303-0822 Fax: (480) 303-0824 E-mail: [email protected] DEI1198 8CH GND/OPEN PARALLEL OUTPUT DISCRETE INTERFACE IC FEATURES Eight discrete inputs o Senses GND/OPEN discrete signals.
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DEI1198
ABD0100H
DO160E,
DO160,
DS-MW-01198-01
MO-153-AD
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PDF
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Toshiba 2SJ
Abstract: No abstract text available
Text: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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Original
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2SK1062
2SJ168
SC-59
Toshiba 2SJ
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PDF
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2SJ168
Abstract: 2SK1062 2SK106
Text: TO SH IBA 2SJ168 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance
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OCR Scan
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2SJ168
2SK1062
-100m
2SJ168
2SK106
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PDF
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Untitled
Abstract: No abstract text available
Text: BC127 Datasheet Key Specifications • Bluetooth Certified 4.0 Audio module Dual Mode: Bluetooth and Bluetooth Low Energy BLE Backwards compatible with 1.1, 2.0, 2.1 + EDR and 3.0 Embedded Bluetooth Protocol Stack Supports HFP, A2DP, AVRCP, PBAP and SPP
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BC127
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PDF
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ON Semiconductor marking
Abstract: motorola ZENER diode marking code motorola transistor dpak marking motorola diode marking code On semiconductor date Code dpak YEAR A on semiconductor marking code dpack MARKING ON Semiconductor to220 transistor marking MOTOROLA sot-223 MARKING ON SEMI MOTOROLA DATE CODE transistor
Text: 504 BRD8008/D Rev. 0, Mar-2000 ON Semiconductor Part Marking Transition Brochure ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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BRD8008/D
Mar-2000
r14525
ON Semiconductor marking
motorola ZENER diode marking code
motorola transistor dpak marking
motorola diode marking code
On semiconductor date Code dpak YEAR A
on semiconductor marking code dpack
MARKING ON Semiconductor
to220 transistor marking MOTOROLA
sot-223 MARKING ON SEMI
MOTOROLA DATE CODE transistor
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PDF
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2SJ168
Abstract: 2SK1062
Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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Original
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2SJ168
2SK1062
2SJ168
2SK1062
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PDF
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2SJ168
Abstract: 2SK1062
Text: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 ms (min)
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2SK1062
2SJ168
2SJ168
2SK1062
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PDF
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adm2483
Abstract: Isolator
Text: iCoupler Isolated RS-485 Transceiver ADM2483 Preliminary Technical Data FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS Low Power RS-485/RS-422 Networks Isolated Interfaces Building Control Networks Multipoint Data Transmission Systems GND2 VDD2 VDD1 DE Galvanic Isolation
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RS-485
2500VRMS
RS-485-A-1998
250kbps
ADM2483
16-Lead
RW-16)
ADM2483BRW
adm2483
Isolator
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Data Hot Swappable, Dual I2C Isolators with Integrated DC-to-DC Converter ADM3260 FEATURES isoPower integrated, isolated dc-to-dc converter: Regulated 3.15 V or 5.25 V output Up to 150 mW output power High common-mode transient immunity: >25 kV/ s
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ADM3260
20-lead
60106-A
MO-150-AE
RS-20)
ADM3260ARSZ
RS-20
PR11890-0-10/13
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PDF
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a8805
Abstract: sot-223 5.0 V to 3.3 V sot-223 a8805 POSITIVE VOLTAGE REGULATORS SOT-223 5V 100mA AME8805BEFT MARKING a1 sot 89 AME8805 AME8805AEFT AME8805CEFT AME8805FEFT
Text: Analog Microelectronics, Inc. AME8805 / 8810 600mA CMOS LDO n General Description n Features The AME8805/8810 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-89 and SOT-223 packages are attractive for "Pocket" and "Hand Held" applications.
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AME8805
600mA
AME8805/8810
OT-89
OT-223
2006-DS8805/8810-E
a8805
sot-223 5.0 V to 3.3 V
sot-223 a8805
POSITIVE VOLTAGE REGULATORS SOT-223 5V 100mA
AME8805BEFT
MARKING a1 sot 89
AME8805AEFT
AME8805CEFT
AME8805FEFT
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PDF
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2SK106
Abstract: No abstract text available
Text: 2SJ168 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm • • Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance
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OCR Scan
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2SJ168
--50mA
2SK1062
2SK106
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PDF
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2SJ168
Abstract: 2SK1062
Text: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 ms (min)
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Original
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2SK1062
2SJ168
2SJ168
2SK1062
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PDF
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2SJ168
Abstract: 2SK1062
Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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Original
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2SJ168
2SK1062
2SJ168
2SK1062
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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Original
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2SJ168
2SK1062
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 ms (min)
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Original
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2SK1062
2SJ168
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PDF
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AIRbus open ground
Abstract: DEI1198 ABD0100 DEI1166 ABD0100H 9v 200 ohm relay DEI1198-TES-G
Text: Device Engineering Incorporated DEI1198 8CH GND/OPEN PARALLEL OUTPUT DISCRETE INTERFACE IC 385 East Alamo Drive Chandler, AZ 85225 Phone: 480 303-0822 Fax: (480) 303-0824 E-mail: [email protected] FEATURES • • • • • • Eight discrete inputs o Senses GND/OPEN discrete signals.
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Original
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DEI1198
ABD0100H
DO160E,
DS-MW-01198-01
J-STD-020A
AIRbus open ground
ABD0100
DEI1166
9v 200 ohm relay
DEI1198-TES-G
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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Original
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2SJ168
2SK1062
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 ms (min)
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Original
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2SK1062
2SJ168
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PDF
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Untitled
Abstract: No abstract text available
Text: BC118 Datasheet Key Specifications • Bluetooth Certified 4.0 Audio module Single Mode: Bluetooth Low Energy BLE Embedded Bluetooth Protocol Stack Supports GATT Profile, Audio, Proximity, and iBeacon Supports I2C and UART transparent Data Modes
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BC118
BC118
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PDF
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