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Alpha & Omega Semiconductor AO3419L MOSFET P-CH 20V 3.5A SOT23-3
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DigiKey	AO3419L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	AO3419L		138,658			1 - 10 - 100 - 1000 $0.224 10000 $0.194	Buy Now
AOS Thermal Compounds AO3419L
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Bristol Electronics	AO3419L		2,020			1 - 10 - 100 - 1000 - 10000 -	Get Quote

AO3419L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AO3419L		Alpha & Omega Semiconductor	P-Channel Enhancement Mode Field Effect Transistor		Original	PDF

AO3419L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AO3419 Abstract: AO3419L Text: Rev 1:Nov 2004 AO3419, AO3419L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This	Original	AO3419, AO3419L AO3419 O-236 OT-23) AO3419L	PDF
AO3419L equivalent Abstract: AO3419 AO3419L Text: AOS Semiconductor Product Reliability Report AO3419/AO3419L, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Oct 26, 2006 1 This AOS product reliability report summarizes the qualification result for AO3419. Accelerated	Original	AO3419/AO3419L, AO3419. AO3419 10-5eV Mil-Std-105D AO3419L equivalent AO3419L	PDF
Untitled Abstract: No abstract text available Text: AO3419 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO3419 AO3419/L AO3419 AO3419L -AO3419L O-236 OT-23)	PDF
AO3419 Abstract: AO3419L Text: AO3419 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO3419 AO3419/L AO3419 AO3419L -AO3419L O-236 OT-23)	PDF
Untitled Abstract: No abstract text available Text: AO3419 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO3419 AO3419 AO3419L O-236 OT-23)	PDF
KB930 Abstract: ENE KB930QF A1 rtd2132 rtd2132s RTL8111E RT8205Lzqw LA-7552P KB930QF A1 ENE KB930 rts5137 Text: A B C D E 1 1 Compal Confidential 2 2 QBL50 Schematics Document AMD Sabine APU Llano / Hudson M2_M3 / Vancouver Whistler UMA only / PX Muxless with BACO 3 3 2010-02-16 LA-7552P REV: 0.03 4 4 2010/08/04 Issued Date 2010/08/04 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL	Original	QBL50 LA-7552P LA-4902P KB930 ENE KB930QF A1 rtd2132 rtd2132s RTL8111E RT8205Lzqw KB930QF A1 ENE KB930 rts5137	PDF