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    Untitled

    Abstract: No abstract text available
    Text: AOS Semiconductor Product Reliability Report AO3424/AO3424L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Apr 19, 2006 1 This AOS product reliability report summarizes the qualification result for AO3424. Accelerated


    Original     		AO3424/AO3424L, AO3424. AO3424 Mil-Std-105D PDF

    AO3424

    Abstract: No abstract text available
    Text: AO3424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3424/L uses advanced trench technology to provide excellent RDS ON , very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		AO3424 AO3424/L AO3424 AO3424L -AO3424L O-236 OT-23) PDF

    AO3424

    Abstract: No abstract text available
    Text: AO3424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3424 uses advanced trench technology to provide excellent RDS ON , very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		AO3424 AO3424 AO3424L AO3424L O-236 OT-23) PDF