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    AO4447L Search Results

    AO4447L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO4447L Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF

    AO4447L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AO4447

    Abstract: AO4447L
    Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard


    Original
    AO4447 AO4447 AO4447L PDF

    transistor d452

    Abstract: d452 TRANSISTOR D452 D452 ALPHA
    Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. AO4447 and


    Original
    AO4447 AO4447/L AO4447L -AO4447L transistor d452 d452 TRANSISTOR D452 D452 ALPHA PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard


    Original
    AO4447 AO4447 AO4447L PDF

    AO4447

    Abstract: AO4447L
    Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. AO4447 and


    Original
    AO4447 AO4447/L AO4447 AO4447L -AO4447L PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard


    Original
    AO4447 AO4447 AO4447L PDF