AO4468
Abstract: No abstract text available
Text: AO4468 30V N-Channel MOSFET General Description Product Summary The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO4468
AO4468
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AO4468L
Abstract: 116a
Text: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated
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AO4468
AO4468
AO4468L
116a
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AO4468
Abstract: AO4468L AO4468 AOS 116A
Text: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated
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AO4468
AO4468
AO4468L
AO4468 AOS
116A
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AO4468
Abstract: No abstract text available
Text: AO4468 30V N-Channel MOSFET General Description Product Summary The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO4468
AO4468
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AO4468
Abstract: No abstract text available
Text: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow
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AO4468
AO4468/L
AO4468L
-AO4468L
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ao4468
Abstract: AO4468L
Text: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow
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AO4468
AO4468/L
AO4468
AO4468L
-AO4468L
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Untitled
Abstract: No abstract text available
Text: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated
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AO4468
AO4468
AO4468L
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Untitled
Abstract: No abstract text available
Text: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated
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AO4468
AO4468
AO4468L
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AO4468
Abstract: rgte
Text: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow
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AO4468
AO4468
AO4468L
-AO4468L
rgte
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Untitled
Abstract: No abstract text available
Text: AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow
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AO4468
AO4468
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MOSFETs
Abstract: N mosfet 100v 500A uis test AO4468 for bipolar junction diode used for MOSFET cross AOT1N60 high voltage mosfet
Text: dV/dt Ratings for Low Voltage and High Voltage Power MOSFET Fei Wang , Wei Wang, Anup Bhalla 1. Abstract To better understand and utilize AOS power MOSFETs, it is important to understand the design and ratings. Voltage ramp and diode recovery related dV/dt and avalanche breakdown UIS are explained and the inter-relationship
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM14468AA-N •General description ■Features ELM14468AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=11.6A (Vgs=10V) Rds(on) < 14mΩ (Vgs=10V)
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ELM14468AA-N
ELM14468AA-N
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L50RIO
Abstract: 37GL53010-C1 L53II revC1 rqw200n03 L50RI0 ITE8512E L53II L53IIX bd n49 ao4468
Text: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53010-C1 D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 PG20 PG21 PG22 PG23 PG24 PG25 PG26 PG27 PG28
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L53II0
37GL53010-C1
82GL53010-C1
965GM
9LPRS365
GL827
RTL25)
PJP35
PJP36
PC258
L50RIO
L53II revC1
rqw200n03
L50RI0
ITE8512E
L53II
L53IIX
bd n49
ao4468
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Untitled
Abstract: No abstract text available
Text: シングル N チャンネル MOSFET ELM14468AA-N •概要 ■特長 ELM14468AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=11.6A Vgs=10V ・ Rds(on) < 14mΩ (Vgs=10V)
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ELM14468AA-N
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ELM14468AA
Abstract: 116a
Text: 单 N 沟道 MOSFET ELM14468AA-N •概要 ■特点 ELM14468AA-N 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=11.6A Vgs=10V ·Rds(on) < 14mΩ (Vgs=10V) ·Rds(on) < 22mΩ (Vgs=4.5V) ■绝对最大额定值
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ELM14468AA-N
ELM14468AA
116a
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r305 finger print module
Abstract: JMB363 JMB362 37GP55000-C0 rqa130n03 rqa130 ICS9LPR365 Sil3531 QT1608RL600HC C926A
Text: 5 4 3 2 Model : P75/55IMx 1 Revision History 08/2006 D Intel Merom CPU + PM965 + ICH8-M Chipset Santa Rosa plantfrom No supported AMT Initial Rev.RA 09/2006 Rev.A1 11/2006 Rev.A2 01/2007 Rev.B 03/2007 Rev.C D PCB P/N: 37GP55000-C0 PCBA P/N: 82GP55000-C0
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P75/55IMx
PM965
37GP55000-C0
82GP55000-C0
SLG8SP510
22u/X7R
r305 finger print module
JMB363
JMB362
rqa130n03
rqa130
ICS9LPR365
Sil3531
QT1608RL600HC
C926A
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rqw200n03
Abstract: 37GL53010-C1 L50RIO ITE8512E RQW200 L53II6 pll gl960 gl960 HCB1608KF-600T30 rqw130
Text: 5 Model : L53II6 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53080-C1F D D Intel Merom CPU + GL960 + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE
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L53II6
37GL53010-C1
82GL53080-C1F
GL960
9LPRS365
GL827
1394/Card
OZ128)
PJP35
PJP36
rqw200n03
L50RIO
ITE8512E
RQW200
L53II6
pll gl960
gl960
HCB1608KF-600T30
rqw130
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ITE8512E
Abstract: rqw200n03 L50RIO 37GL53010-C1 L53II revC1 ITE8512 L50RI0 FP6137B IT8512E L53II
Text: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53110-C1 SMSC D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE
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L53II0
37GL53010-C1
82GL53110-C1
965GM
9LPRS365
GL827
PJP35
PJP36
PC258
max8744
ITE8512E
rqw200n03
L50RIO
L53II revC1
ITE8512
L50RI0
FP6137B
IT8512E
L53II
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37GP55000-C0
Abstract: JMB362 QT1608RL600HC Uniwill P55IMX Sil3531 jmb363 55im ITE8512E rqa130n03 P55IM
Text: 5 4 3 2 Model : P75/55IMx 1 Revision History 08/2006 D Intel Merom CPU + PM965 + ICH8-M Chipset Santa Rosa plantfrom No supported AMT Initial Rev.RA 09/2006 Rev.A1 11/2006 Rev.A2 01/2007 Rev.B 03/2007 Rev.C D PCB P/N: 37GP55000-C0 PCBA P/N: 82GP55000-C0
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P75/55IMx
PM965
37GP55000-C0
82GP55000-C0
SLG8SP510
JMB362
QT1608RL600HC
Uniwill P55IMX
Sil3531
jmb363
55im
ITE8512E
rqa130n03
P55IM
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AO4946
Abstract: AO4456 AO6414 AO4466 ao4712 AOP610 D-PAK AO4803A AO3407A AO4427 AO8820
Text: NEW! MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Alpha and Omega Semiconductor AOS has a portfolio of approximately 400 products making AOS a well known, high volume, global supplier of Power MOSFETs. This diverse product range includes both N and P
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SC-89,
O-220.
OT-23
custome6403
AO6405
AO6409
AO6701
AO7401
AO7407
AO7413
AO4946
AO4456
AO6414
AO4466
ao4712
AOP610 D-PAK
AO4803A
AO3407A
AO4427
AO8820
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C1470 LM
Abstract: se u10i layout RTS5158 bga676 zd801 RTL8101E-GR PM965 hy5rs123235b W651DI R1287
Text: A B C D E X'TAL 14.318MHz Merom Processor System Power Rail Management Dual-Core CLOCK GEN ICS9LPR358AGLFT uFCPGA 478 2 3,4 FSB (667/800 MHz) FSB 4 PM965 ATI M74M USB 1 LVDS ＊V ＊VS HIGH HIGH ON ON ON ON S3 (Suspend to RAM) LOW HIGH HIGH HIGH ON ON OFF
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318MHz
ICS9LPR358AGLFT
PM965
965GM
965PM
512MB
703ms
W651DI
40GAB2030-FXXX
40GAB1700-FXXX
C1470 LM
se u10i layout
RTS5158
bga676
zd801
RTL8101E-GR
PM965
hy5rs123235b
W651DI
R1287
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RTS5158
Abstract: northbridge G41 se u10i layout GM965 28K1 IC NS0013 sla5t bga676 rtl8010 C1087
Text: A B C D E X'TAL 14.318MHz Merom Processor System Power Rail Management Dual-Core CLOCK GEN ICS9LPR358AGLFT uFCPGA 478 2 3,4 FSB (667/800 MHz) FSB 4 GM965/PM965 ATI M74M USB 1 LVDS ＊V ＊VS HIGH HIGH ON ON ON ON S3 (Suspend to RAM) LOW HIGH HIGH HIGH ON
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318MHz
ICS9LPR358AGLFT
GM965/PM965
965GM
965PM
512MB
3B817
2R1066
74U23
76U23
RTS5158
northbridge G41
se u10i layout
GM965
28K1
IC NS0013
sla5t
bga676
rtl8010
C1087
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FBMA-L11-201209-221LMA30T
Abstract: ATI-RS690M LA-3611P LA3611 ISL6251 KB926QFA1 MAX8774GTL kb926 si7686 compal
Text: A B C D E 1 1 Compal Confidential 2 2 Schematics Document AMD S1/ ATI RS690MC / SB600 2007 / 4 / 10 Rev:0.4 3 3 4 4 Compal Secret Data Security Classification Issued Date 2007/1/25 2008/01/25 Deciphered Date Title Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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RS690MC
SB600
LA-3611P
LA-3611P
FBMA-L11-201209-221LMA30T
ATI-RS690M
LA3611
ISL6251
KB926QFA1
MAX8774GTL
kb926
si7686
compal
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kb3310qf c1
Abstract: KB3310QF mmc ga201 KB3310 kb3310qf b0 quanta at2 KB3310QF-B0 AOZ1021 quanta at1 quanta
Text: 5 D 4 VTERM +0.9V VTT(+1.05V) +1.5VSUS +1.5V +1.8VMEM +1.8V +2.5V 3VPCU +3.3V +3.3VSUS LCD_3.3V LCD_5V +5V 3 2 IL1 Block Diagram B -> C 2008-01-08 VID[0:6] C7-M (ULV) VCORE:+1.196 ~ +0.748 VCCP:+1.05V VCCA:+1.8V or +1.5V +/- CPU_CLK +/- HCLK CRT 256M/512M/1GB
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ICS9UM700
256M/512M/1GB
VX800
RJ-45
RJ-11
RTL8100CL
CSP1040
ALC267
VCC15:
VCC33:
kb3310qf c1
KB3310QF
mmc ga201
KB3310
kb3310qf b0
quanta at2
KB3310QF-B0
AOZ1021
quanta at1
quanta
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