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Alpha & Omega Semiconductor AO4822AL MOSFET 2N-CH 30V 8A 8SOIC
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Alpha & Omega Semiconductor AO4822AL_102 MOSFET 2N-CH 30V 8A 8SOIC
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AO4822AL Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AO4822AL		Alpha & Omega Semiconductor	Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
AO4822AL_102		Alpha & Omega Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 30V 8A 8SOIC		Original	PDF

AO4822AL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AO4822AL Abstract: No abstract text available Text: AO4822AL 30V Dual N-Channel MOSFET General Description Features The AO4822AL uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V ID = 8.5A (VGS = 10V)	Original	AO4822AL AO4822AL	PDF
samsung r580 Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917 Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL	Original	BA41-01174A 100nF MIC502 B4013AM423-32 MIC500 SOM4013SL-G443-C1033 samsung r580 marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917	PDF
RTL8192 Abstract: RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308 Text: Point LABEL-LOGO BEZEL-ODD KNOB-ODD LENS-ODD HDD Componet BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A Object description LABEL-LOGO_SAMSUNG;NP,SEC,ARTPAPER+OPP COATING,-,-,-,-,W	Original	BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A BA43-00207A BA69-40003A BA44-00242A BA81-07036A BA42-00235A RTL8192 RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308	PDF
MX25L1605DM2I-12G Abstract: samsung R540 service AR5B95 samsung r730 NP303-CQS-2 mx25l1605dm2i NP303-CQS-2-F1 88E8040-A0-NNB2-C000 bremen-ul 88E8040-A0-NNB2C000 Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List 6-1. 15" Material List Level .1 .1 .1 .1 .1 .1 .1 .1 .1 Code 0203-001869	Original	BA41-01201A BA59-02572A WLAN-802 11BGN 125MM R530/R730 BA99-07566A MX25L1605DM2I-12G samsung R540 service AR5B95 samsung r730 NP303-CQS-2 mx25l1605dm2i NP303-CQS-2-F1 88E8040-A0-NNB2-C000 bremen-ul 88E8040-A0-NNB2C000	PDF
AO4822A Abstract: AO4822AL Text: AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822A is Pb-free	Original	AO4822A AO4822A AO4822AL	PDF
samsung R540 service Abstract: L0613 samsung R540 service manual atheros ar5B95 JLCD501 AC82GL40 ATHEROS WLL6160-D99 DAC-09N019 4309-00 ltn156at01 Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. - - This Document can not be used without Samsung's authorization. – 6. Material List Level 1 Parts Code Assembled EA Spec. Description ,-	Original	BA44-00242A BA62-00484B BA62-00484A BA31-00062A BA31-00062B BA96-04071A BA97-02919A BA81-04551A BA75-02201D BA81-06575A samsung R540 service L0613 samsung R540 service manual atheros ar5B95 JLCD501 AC82GL40 ATHEROS WLL6160-D99 DAC-09N019 4309-00 ltn156at01	PDF
Untitled Abstract: No abstract text available Text: AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822A is Pb-free	Original	AO4822A AO4822A AO4822AL	PDF
BA41-01086A Abstract: BA41-01084A LTST-C193TBKT-AC tps51125 LFE8423 smd diode ae c604 smd 475 20k 233 DIODE ps8171 qingdao-int 22p smd Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D QingDao_Int g n l u a s i t m n a e S fid n	Original	BA41-01084A BA41-01085A BA41-01086A 25MHz 75inches LTST-C193TBKT-AC tps51125 LFE8423 smd diode ae c604 smd 475 20k 233 DIODE ps8171 qingdao-int 22p smd	PDF
MEC1308-NU Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308 Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4	Original	VDD18 BA41-xxxxxxA MEC1308-NU APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308	PDF
c945 g 528 Abstract: RX781M smd diode ae c604 SLG8SP628VTR 88E8057 RX781 SB700 slg8sp628v 22p smd H8S-2110B Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents QingDao-D D Model Name PBA Name	Original	ALC272 Sheet46 Sheet47 Sheet48 Sheet49 sheet12] Sheet50 c945 g 528 RX781M smd diode ae c604 SLG8SP628VTR 88E8057 RX781 SB700 slg8sp628v 22p smd H8S-2110B	PDF
SCB-1700N Abstract: SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List Level Code 1 BA44-00264A 1 Assembled ADAPTOR 1 BA43-00212A 1 BATTERY 1 BA43-00220A	Original	BA44-00264A BA43-00212A BA43-00220A BA43-00221A BA43-00222A BA46-08356A BA46-09951A BA46-10898A BA99-14031A BA68-03029A SCB-1700N SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C	PDF