AOT-2015HPW-1751B
Abstract: k3217 LTC3217 LTC3217EUD MO-220 S/BIP/SCB345100/B/30/10/AOT-2015HPW-1751B
Text: LTC3217 600mA Low Noise Multi-LED Camera Light Charge Pumps DESCRIPTION FEATURES n n n n n n n n n n n n Charge Pump Provides High Efficiency with Automatic Mode Switching Multimode Operation: 1x, 1.5x, 2x Four Low Dropout LED Outputs Up to 600mA Total Output Current
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LTC3217
600mA
16-Lead
LTC3251
500mA
10-Lead
LTC3405/LTC3405A
300mA
LTC3406/LTC3406A
AOT-2015HPW-1751B
k3217
LTC3217
LTC3217EUD
MO-220
S/BIP/SCB345100/B/30/10/AOT-2015HPW-1751B
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programming cellphones software
Abstract: LT1932 LTC3217 LTC3217EUD MO-220 k3217 aot 2015
Text: LTC3217 600mA Low Noise Multi-LED Camera Light Charge Pump DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Charge Pump Provides High Efficiency with Automatic Mode Switching Multimode Operation: 1x, 1.5x, 2x Four Low Dropout LED Outputs
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Original
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LTC3217
600mA
16-Lead
LTC3217
10-Lead
LTC3405/LTC3405A
300mA
LTC3406/LTC3406A
600mA
programming cellphones software
LT1932
LTC3217EUD
MO-220
k3217
aot 2015
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PDF
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Untitled
Abstract: No abstract text available
Text: LTC3217 600mA Low Noise Multi-LED Camera Light Charge Pumps DESCRIPTION FEATURES n n n n n n n n n n n n Charge Pump Provides High Efficiency with Automatic Mode Switching Multimode Operation: 1x, 1.5x, 2x Four Low Dropout LED Outputs Up to 600mA Total Output Current
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Original
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LTC3217
600mA
16-Lead
10-Lead
LTC3405/LTC3405A
300mA
LTC3406/LTC3406A
600mA
3217fa
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PDF
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2N2222
Abstract: npn 2222 transistor n22222 2222a n2222 npn 2222 2n22222 br 2222 npn N 2222 n2222a
Text: 2 N 2221 • 2 N 2221 A • 2 N 2222 • 2 N 2222 A 'W Silizium-NPN-Epitaxial-Planar-Schalttransistoren Silicon NPN Epitaxial Planar Switching Transistors A nw endungen: HF-Verstärker und Schalter A p p lic a tio n s : RF am plifiers and switches Besondere M erkm ale:
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CA3420T
Abstract: CA3420AE voltmeter ic 741 CA3420 application Harris ota
Text: HARRIS SEfllCOND SECTOR blE ]> • 4305271 004b371 447 « H A S HARRIS S E M I C O N D U C T O R C A ? 4 2 fi W / H V Low Supply Voltage, Low Input Current BiMOS Operational Amplifiers March1993 Features Description • 2V Supply at 300iiA Supply Currant
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004b371
CA3420A
CA3420
CA3420T
CA3420AE
voltmeter ic 741
application Harris ota
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PDF
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photointerrupter
Abstract: aot 430
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A 2.54 '2.03 r- cNj LO CO 1.70 1.45 GE006391 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified W esentliche Merkmale Features
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GE006391
Q68000-A7852
photointerrupter
aot 430
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PDF
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mosfet v0
Abstract: CA5260 CA5260T
Text: blE D HARRIS SEMICOND SECTOR m • 4302271 0Q4fc>427 510 B H A S CA5260 HARRIS SEMICONDUCTOR BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage provides • Very High 3 » 1.5TO 1 5 x 10120 Typ.
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CA5260
CA5260A
CA5260
CA5160
10kil
43DS271
G04b431
CA5260,
CA5260A
mosfet v0
CA5260T
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode SFH 244 S Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im
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fl23Sb05
fl235b05
0DS7b47
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PDF
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toshiba tlc 711
Abstract: aot 110 opto CD 4017 PIN DIAGRAM 4011 BP TOSHIBA opto 2561 litton cpu primer p19 TC351 ic cd 4017 PIN DIAGRAM ic cd 4017
Text: TOSHIBA INTEGRATED CIRCUIT CMOS D ie ;T A « TC 3 5 1 8 0 F T E C H N IC A L D A T A TC35190F • = ¡VTEC3ATED C : S C. SILICON MONOLITHIC Video-data Coepretslon and E»panslon C o n tro lle r* ) 1988-1 1*03 DESCRIPTION TC35190F ( VCEC ) p e rfo ri* ercoJ.RC m i decodins
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TC35190F
77S6pelÂ
s9-29-23
TC381
toshiba tlc 711
aot 110 opto
CD 4017 PIN DIAGRAM
4011 BP TOSHIBA
opto 2561
litton cpu
primer p19
TC351
ic cd 4017 PIN DIAGRAM
ic cd 4017
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PDF
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AF 109 R
Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB
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AF109R
AF 109 R
AF109R
af109
germanium-pnp-mesa-hf-transistor
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PDF
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CA3100E
Abstract: CA3100 2120D D04B
Text: HARRIS SEMICOND SECTOR b l E ]> WÊ M3DE271 GGMbSTQ h5T I H HAS CA3100 33 HARRIS SEMICONDUCTOR J ru Ë \J \J Wideband Operational Amplifier March 1993 Description • High Open Loop Gain at Video Typ. at 1MHz
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M3DE271
CA3100
CA3100
38MHz
110kHz.
15MHz
\2N5320
33fiF
50QLME:
CA3100E
2120D
D04B
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PDF
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Untitled
Abstract: No abstract text available
Text: SDttfHS , HIN200 th ru HIN213 +5V Powered RS-232 Transm itters/R eceivers w ith 0.1 M icrofarad External C apacitors April 1996 Features Description • Meets All RS-232E and V.28 Specifications The HIN200-HIN213 family of RS-232 transmitters/receivers
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HIN200
HIN213
RS-232
RS-232E
HIN200-HIN213
HIN201
HIN209)
RS232
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PDF
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bosch Knock sensor
Abstract: cc196 CC195 bosch Knock cc196 CC195 Knock Sensor IC bosch piezoelectric sensor bosch cc195 bosch Knock sensor CC196 bosch window motor knock sensor Bosch
Text: 20-PPR-1999 CC195 16:33 FROM BOSCH SAT SALES TO 901132799527 P. 02 Specification English extract CC195 Knock Sensor IC Specification Version 6.9a This specification is the property of Bosch and must be maintained in confidence and not discfoeed to others without the prior written consent of Bosch. Bosch makes no warranties
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20-PPR-1999
CC195
CC195
4JL25
FM-13.
S15kHz
dB12kHz
816kHz
24kHz
bosch Knock sensor
cc196
bosch Knock cc196
CC195 Knock Sensor IC
bosch piezoelectric sensor
bosch cc195
bosch Knock sensor CC196
bosch window motor
knock sensor Bosch
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PDF
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D2 DIN 6784
Abstract: D3 DIN 6784
Text: Infineon ?si li noiosi «* G a A s M M IC Data Sheet C G Y180 • Poweramplifierfor DECT, PHS, WLL applications • Fully integrated 3 stage amplifier • Operating voltage range: 2.7 to 6 V • Overall power added efficiency 35% • Easy external matching
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Q68000-A8882
MW-12
P-SOT-223,
D2 DIN 6784
D3 DIN 6784
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PDF
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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PDF
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Untitled
Abstract: No abstract text available
Text: XC7372 72 Macrocell CMOS EPLD HXILINX Advance Product Information The Universal Interconnect Matrix connects the Function Blocks to each other and to all input pins, providing 100% connectivity between the Function Blocks. This allows logic functions to be mapped into the Function Blocks and
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XC7372
XC7372
68-Pin
84-Pin
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PDF
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H209
Abstract: H214
Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l l O R 1 REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS SN7S68 JANSRSN7SB8 JANSHSN7S68 N-CHANNEL MEGA RAD HARO 100 Volt, 0.06512, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7150
IRHM8150
SN7S68
JANSHSN7S68
1x106
1x105
IRHM71500
IRHM7150U
O-254
H209
H214
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 H a r r is C A 5 4 2 0 A C A 5 4 2 0 Low -S upply Voltage, L o w -In p u t C urrent BiMOS Operational Am plifiers A u g u s t 1991 Features • 5420A , C A 5420 G uaranteed to O perate From ± 1V to ± 10 V S upp lies • 2V S upp ly a t 30 0jiA S upp ly C urrent
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CA5420A
CA5420*
CA5420
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PDF
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Untitled
Abstract: No abstract text available
Text: EL2090C .November 1993 Kev C C b lt E C Features • Complete video level restoration system • 0.01% differential gain and 0.02° differential phase accuracy at NTSC • 100 M Hz bandwidth • 0.1 dB flatness to 20 MHz • Sample-and-hold has 15 nA typical leakage and 1.5 pC charge
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EL2090C
R68t01T
EL2090C
5e-15
le-30
EL2090
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PDF
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CA3066
Abstract: CA3088 Pmos transistor 1N814 CA5130M tektronix 2230 adb voltage regulator CD4007 cascode transistor array Harris CA3086
Text: HARRIS SEIIICON] SECTOR H A R R • 4302271 OOMbB^O BTT « H A S CA5130 IS SEMICONDUCTOR BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET input Stag« . Vary High Z ,.1.5TO 1.5 x 1012a )iyp .
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M3DS571
CA5130
CA5130A,
CA5130
CA5130,
CA5130A
100kHz
AN66M
CA3066
CA3088
Pmos transistor
1N814
CA5130M
tektronix 2230
adb voltage regulator
CD4007
cascode transistor array
Harris CA3086
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PDF
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CA3140S
Abstract: Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE
Text: HARRIS SEPIICOND SECTOR blE D • 4302271 □D4bE‘lS 2TD H H A S HARRIS SEMICONDUCTOR CA3140 M ■ m W BiMOS Operational Amplifier with MOSFET Input/Bipolar Output April 1993 Features Description MOSFET Input Stage - Vary High Input Impedance Z,N -1.5TQ (Typ.)
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CA3140
200ns/Dlv
50mV/Div
200ns/Div
50mWDh/
200ns/Div
140kHz,
Tektronix7A13
RGURE35.
CA3140S
Transistor Equivalent TT 2142
Harris CA3140AE
diagram transistor tt 2140
CA3140
CA3140E
Transistor TT 2140
PIN DIAGRAM OF IC CA3140
CA3130 peak detector
CA3140AE
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PDF
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AX2022
Abstract: TACT2150 D6142
Text: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline
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TACT2150
300-Mil
24-Pin
AX2022
D6142
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PDF
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Untitled
Abstract: No abstract text available
Text: EPCOS Aluminum electrolytic capacitors Snap-in capacitors Series/Type: Date: B43508 December 2010 ŒPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B43508
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Untitled
Abstract: No abstract text available
Text: EL2090C élantec HIGH PtRFORMANCE ANALOG INTEGRATED CWCUITS EL2090C 100 MHz DC-Restored Video Amplifier F e a tu r e s G e n e ra l D e s c rip tio n • Com plete video level restoration system • 0.01% differential gain and 0.02° differential phase accuracy a t
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EL2090C
EL2090C
5e-15
le-30
312T557
GG32flT
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PDF
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