AP1002BMX
Abstract: No abstract text available
Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon
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AP1002BMX
AP1002BMX
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ap1002
Abstract: No abstract text available
Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon
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AP1002BMX
AP1002BMX
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Fig10.
ap1002
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP1002BMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free D BV DSS Low Conductance Losses 30V RDS ON Fast Switching Performance G Low Profile (< 0.7mm ) 1.8mΩ ID S 32A Description The AP1002BMX-3 uses the latest APEC Power MOSFET silicon
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AP1002BMX-3
AP1002BMX-3
AP1002B
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Untitled
Abstract: No abstract text available
Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 1.8m ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon
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AP1002BMX
AP1002BMX
Fig10.
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AP1002
Abstract: No abstract text available
Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon
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AP1002BMX
AP1002BMX
100us
100ms
Fig10.
AP1002
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Untitled
Abstract: No abstract text available
Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon
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AP1002BMX
AP1002BMX
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm ▼ Compatible with DirectFET Package MX Footprint and Outline BVDSS 30V
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AP1002BMX
AP1002BMX
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Fig10.
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