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Text: AP9976GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID D2 D2 D1 D1 S2 60V 20.5mΩ 7.6A G2 G1 S1 D2 D1
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9976GP-HF-3 N-channel Enhancement-mode Power MOSFET Low Gate Charge D Simple Drive Requirement Fast Switching Performance G BV DSS 60V RDS ON 21mΩ ID RoHS-compliant, halogen-free 30A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP9976GP
Abstract: No abstract text available
Text: AP9976GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 60V RDS ON 21mΩ ID G 30A S Description Advanced Power MOSFETs from APEC provide the designer with
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9976GM
Abstract: AP9976GM
Text: AP9976GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D2 D2 D1 D1 S2 BVDSS RDS ON ID 60V 26mΩ 6.5A D1 D2 G2 G1 S1 Description
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Abstract: No abstract text available
Text: AP9976GM RoHS-compliant Product Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID D2 D2 D1 D1 S2 60V 20.5m 7.6A G2 G1 S1 D2 D1 Description Advanced Power MOSFETs from APEC provide the designer with
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AP9976GM-HF
Abstract: 9976GM
Text: Advanced Power Electronics Corp. AP9976GM-HF-3 Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS 60V Low On-resistance R DS ON Fast Switching Performance ID 26mΩ 6.5A RoHS-compliant, halogen-free SO-8 package D2 D1 G1 G G2 Description
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Untitled
Abstract: No abstract text available
Text: AP9976GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower Gate Charge Fast Switching Characteristic ID G 60V 21m 30A S Description Advanced Power MOSFETs from APEC provide the designer with
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