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    APD SEMICONDUCTOR Search Results

    APD SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    APD SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Philips diode

    Abstract: APD Semiconductor APD, applications, bias supply IR 2E09 F17 DIODE pin configuration NPN transistor 2N3904 2N3904 AN10 DIODE F22 rohm diode
    Text: AN 16.4 Using Anti-Parallel Diodes APD with SMSC Temperature Sensing Devices 1 Introduction This application note provides information on maintaining temperature measurement accuracy and noise immunity when using anti-parallel diodes (APD) with SMSC’s APD temperature sensing devices.


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    InGaAs Photodiode 1550nm

    Abstract: avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550
    Text: PD LD PDINK Series InGaAs Avalanche Photodiodes Inc. InGaAs APD’s PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate 55 micron diameter active area APD’s that responds optimally to


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    PDF 10meter InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550

    394-70-74-661

    Abstract: 197-70-72-661 LM335
    Text: Cooled OEM Modules Electro-Optical Characteristics All specifications apply when APD is at 0ºC with a gain of 300 and a load resistance of 50 ohms. Part Number APD Diameter APD Spectral Enhancement mm 118-70-73-661 118-70-74-661 118-70-72-661 197-70-73-661


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    PDF 350nm, 500nm 750nm, 394-70-74-661 197-70-72-661 LM335

    LM335 datasheet

    Abstract: LM335 apd gain control 118-70-72-651
    Text: Non-Cooled OEM Modules Electro-Optical Characteristics All specifications apply when APD is at 23ºC with a gain of 200 and a load resistance of 50 ohms. Part Number APD Diameter APD Spectral Enhancement mm 118-70-73-651 118-70-74-651 118-70-72-651 197-70-73-651


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    PDF 350nm, 500nm 750nm, LM335 datasheet LM335 apd gain control 118-70-72-651

    NEC 8701

    Abstract: 10G APD ROSA NR4210TP nec 2401 4 pin
    Text: PRELIMINARY DATA SHEET RECEIVER NR4210 Series InAlAs APD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NR4210 Series products consist of InAIAs-APD avalanche photo diode ROSAs (Receiver Optical Sub-Assembly) with internal pre-amplifiers


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    PDF NR4210 OC-192 NEC 8701 10G APD ROSA NR4210TP nec 2401 4 pin

    apd-TIA Receiver

    Abstract: InGaAs apd photodiode Receptacle LC PRBS231 vb09 pin photodiode 1550nm sensitivity 10gbps ingaas apd-tia
    Text: JOG-01301 Optical Components OF3647R Rev. 6 [10. 2008] Preliminary 10Gbps APD with High Gain TIA receiver optical sub-assembly ROSA 1. DESCRIPTION OF3647R is a high sensitivity APD-TIA receiver optical sub-assembly (ROSA). It includes a high speed InGaAs


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    PDF JOG-01301 OF3647R 10Gbps OF3647R apd-TIA Receiver InGaAs apd photodiode Receptacle LC PRBS231 vb09 pin photodiode 1550nm sensitivity 10gbps ingaas apd-tia

    Fujitsu APD

    Abstract: No abstract text available
    Text: InGaAs-APD/Preamp Receiver FRM5W231BS FEATURES • 2.5Gb/s APD Receiver module in industry standard mini-DIL package • -34 dBm Sensitivity Typ. • -4 dBm Overload (Typ.) • Integral Thermistor • Integral GaAs IC Preamp • Differential Electrical Output


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    PDF FRM5W231BS 550nm FCSI0200M200 Fujitsu APD

    InGaAs apd photodiode

    Abstract: Photodiode apd Fujitsu APD APD Current Monitor FRM5W231BS apd photodiode 7 ghz 10 gb APD receiver
    Text: InGaAs-APD/Preamp Receiver FRM5W231BS FEATURES • 2.5Gb/s APD Receiver module in industry standard mini-DIL package • -34 dBm Sensitivity Typ. • -4 dBm Overload (Typ.) • Integral Thermistor • Integral GaAs IC Preamp • Differential Electrical Output


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    PDF FRM5W231BS 550nm FCSI0200M200 InGaAs apd photodiode Photodiode apd Fujitsu APD APD Current Monitor FRM5W231BS apd photodiode 7 ghz 10 gb APD receiver

    InGaAs apd photodiode

    Abstract: InGaAs apd photodiode application note avalanche photodiode submarine
    Text: WZ700020B 1/6 MITSUBISHI (OPTICAL DEVICES) FU-318SAP-x2Mx APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FU-318SAP-x2Mx series avalanche photodiode(APD) modules are designed for use in high-speed,long haul optical communication systems fiber testing equipment.


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    PDF WZ700020B FU-318SAP-x2Mx FU-318SAP-x2Mx 1550nm) InGaAs apd photodiode InGaAs apd photodiode application note avalanche photodiode submarine

    NR4210

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET RECEIVER NR4210 Series InAlAs APD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NR4210 Series products consist of InAIAs-APD avalanche photo diode ROSAs (Receiver Optical Sub-Assembly) with internal pre-amplifiers


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    PDF NR4210 OC-192

    NR4211

    Abstract: 10G APD ROSA
    Text: Preliminary Data Sheet NR4211TH RECEIVER Limiting TIA, with DCA function InAlAs APD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS R08DS0022EJ0100 Rev.1.00 Sep 13, 2012 DESCRIPTION The NR4211TH product consists of InAIAs-APD (avalanche photo diode)


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    PDF NR4211TH R08DS0022EJ0100 NR4211TH OC-192 90Taiwan NR4211 10G APD ROSA

    Untitled

    Abstract: No abstract text available
    Text: JOG-01301 Optical Components OF3647R Rev. 8 [4. 2009] Preliminary 10Gbps APD with High Gain TIA receiver optical sub-assembly ROSA 1. DESCRIPTION OF3647R is a high sensitivity APD-TIA receiver optical sub-assembly (ROSA). It includes a high speed InGaAs


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    PDF JOG-01301 OF3647R 10Gbps OF3647R

    VJ0603Y104KXAACW1BC

    Abstract: APD, applications, bias supply LBMF1608 GRM188R71H104KA93D GLF1608T4R7M GRM188R60J475KE19D LBMF1608T4R7M MIC2290 GRM21BR71H474K Avalanche Photo Diode
    Text: MIC2290 APD Evaluation Board 48V Avalanche Photo Diode (APD) Bias Circuit General Description 2. Connect the load to the VOUT (J4) and ground (J5) terminals. The load can be either passive (resistor) or active (electronic load). An ammeter can be placed between


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    PDF MIC2290 MIC2290 M9999-061506 VJ0603Y104KXAACW1BC APD, applications, bias supply LBMF1608 GRM188R71H104KA93D GLF1608T4R7M GRM188R60J475KE19D LBMF1608T4R7M GRM21BR71H474K Avalanche Photo Diode

    H546TAN01.0N

    Abstract: No abstract text available
    Text: AMERICAN POWER DEVICES S1E D • 073713S DDDDD3b W • APD 7^o\-oZL AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference most Motorola part numbers, including low noise, low current and Motorola Class 3 devices. ZENER AND AVALANCHE REGULATOR DIODES


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    PDF 073713S 11M4683 1N4684 1N4685 1N4686 1N4687 1N4688 1N4689 DO-35 H546TAN01.0N

    motorola .5w zener diodes

    Abstract: No abstract text available
    Text: AMERICAN POWER DEVICES S1E D • 073713S DDDDD3b W • APD 7^o\-oZL AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference most Motorola part numbers, including low noise, low current and Motorola Class 3 devices. ZENER AND AVALANCHE REGULATOR DIODES


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    PDF 073713S 11M4683 1N4684 1N4685 1N4686 1N4687 1N4688 1N4689 DO-35 motorola .5w zener diodes

    APD 1550 nm

    Abstract: 17-PIN NR4270MU-CC NR4270MU-CC-AZ STM-64 10 gb laser diode stm 64 laser diode 1550 nm 10 gb PIN receiver 10 gb APD receiver
    Text: NEC's SUPERLATTICE APD MODULE WITH INTERNAL PREAMPLIFIER NR4270MU-CC FOR 10 Gb/s APPLICATIONS FEATURES DESCRIPTION • SUPERLATTICE AVALANCHE PHOTO DIODE NEC'S NR4270MU-CC is a 10 Gb/s superlattice avalanche photo diode APD receiver in a 17-pin mini-butterfly package


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    PDF NR4270MU-CC NR4270MU-CC 17-pin OC-192 STM-64, OC-192) APD 1550 nm NR4270MU-CC-AZ STM-64 10 gb laser diode stm 64 laser diode 1550 nm 10 gb PIN receiver 10 gb APD receiver

    THM 104 THERMISTOR

    Abstract: datasheet apd 1550, sensitivity 30 dBm, 10 Gb/s 17-PIN NR4270MU-CC STM-64 receiver avalanche 1550 fiber 2.5 10 gb PIN receiver 10 gb APD receiver apd 1550, sensitivity 30 dBm
    Text: NEC's SUPERLATTICE APD MODULE WITH INTERNAL PREAMPLIFIER NR4270MU-CC FOR 10 Gb/s APPLICATIONS FEATURES DESCRIPTION • SUPERLATTICE AVALANCHE PHOTO DIODE NEC'S NR4270MU-CC is a 10 Gb/s superlattice avalanche photo diode APD receiver in a 17-pin mini-butterfly package


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    PDF NR4270MU-CC NR4270MU-CC 17-pin OC-192 STM-64, OC-192) ULT1581 THM 104 THERMISTOR datasheet apd 1550, sensitivity 30 dBm, 10 Gb/s STM-64 receiver avalanche 1550 fiber 2.5 10 gb PIN receiver 10 gb APD receiver apd 1550, sensitivity 30 dBm

    ZENER 18- 2 5t

    Abstract: 30T 326 1N4705 1N4104 MOTOROLA
    Text: AMERICAN POWER DEVICES S1E D • 073713S DDDDD3b W • APD 7^o\-oZL AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference most Motorola part numbers, including low noise, low current and Motorola Class 3 devices. ZENER AND AVALANCHE REGULATOR DIODES


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    PDF 073713S 1N4099 1N4100 1N4101 1N4102 1N4103 1N4104 1N4105 1N4106 1N4107 ZENER 18- 2 5t 30T 326 1N4705 1N4104 MOTOROLA

    AGILENT A 1610 OPTICAL

    Abstract: No abstract text available
    Text: Preliminary Data Sheet May 2004 RQA1001 10 Gb/s APD-TIA ROSA Description The RQA1001 10 Gb/s receiver optical subassembly ROSA integrates a 10 Gb/s APD photodetector and a transimpedance amplifier (TIA) in a metallized ceramic package. These receiver optical engines are designed


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    PDF RQA1001 DS04-004-1 DS04-004) AGILENT A 1610 OPTICAL

    BZY88C

    Abstract: BZY88-C12 BZY88C6V8
    Text: AMERICAN POWER DEVICES S1E D • 073713S DDDDD3b W • APD 7^o\-oZL AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference most Motorola part numbers, including low noise, low current and Motorola Class 3 devices. ZENER AND AVALANCHE REGULATOR DIODES


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    PDF 073713S DO-35 BZY88C BZY88-C12 BZY88C6V8

    Fujitsu APD

    Abstract: InGaAs apd photodiode FRM5W232BS 550NM photodiode
    Text: InGaAs-APD/Preamp Receiver FRM5W232BS FEATURES • 2.5Gb/s APD Receiver module in an industry standard mini-DIL package • High Sensitivity: -34 dBm typ. • High Differential Electrical Output • Power Overload: -4dBm (typ.) • Integral Thermistor and GaAs IC Preamp


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    PDF FRM5W232BS 550nm FCSI0302M200 Fujitsu APD InGaAs apd photodiode FRM5W232BS 550NM photodiode

    avalanche photodiode submarine

    Abstract: FU-318AP-VM6 InGaAs apd photodiode FU-318SAP-VM6 mitsubishi fu mmf
    Text: WZ700066B 1/3 MITSUBISHI (OPTICAL DEVICES) FU-318AP/SAP-VM6 APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION The FU-318AP-VM6/318SAP-VM6 series avalanche photodiode(APD) modules are designed for use in fiber testing equipment and high-speed, long haul optical


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    PDF WZ700066B FU-318AP/SAP-VM6 FU-318AP-VM6/318SAP-VM6 1300nm) avalanche photodiode submarine FU-318AP-VM6 InGaAs apd photodiode FU-318SAP-VM6 mitsubishi fu mmf

    PX10160E

    Abstract: NR4510US NR4510US-AZ NR4510UT NR4510UT-AZ STM-16
    Text: PRELIMINARY DATA SHEET RECEIVER NR4510US,NR4510UT φ 50 µm InGaAs APD RECEIVER FOR 2.5 Gb/s ROSA WITH INTERNAL PRE-AMPLIFIER DESCRIPTION The NR4510US and NR4510UT are InGaAs APD ROSAs with an internal pre-amplifier in a receptacle type package designed for SFF/SFP transceiver


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    PDF NR4510US NR4510UT NR4510UT STM-16, PX10160E NR4510US-AZ NR4510UT-AZ STM-16

    mitsubishi APD

    Abstract: PD8* APD Photo Diodes tia amplifier ghz PD839C4 mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent
    Text: MITSUBISHI PHOTO DIODES PD839C4 InGaAs AVALANCHE PHOTO DIODES PD839C4 Feature DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical


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    PDF PD839C4 PD839C4 10MHz-1 488G/s, 180um mitsubishi APD PD8* APD Photo Diodes tia amplifier ghz mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent