Untitled
Abstract: No abstract text available
Text: AP9467GS RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D 40V RDS ON Single Drive Requirement Fast Switching Characteristics ID G 11m 52A S Description Advanced Power MOSFETs from APEC provide the
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AP9467GS
O-263
O-263
9467GS
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difference between IGBT and MOSFET IN inverter
Abstract: 2kw pfc smps igbt IRG4PC50W EQUIVALENT 2kw mosfet 48V SMPS AN-941 IGBT 600V 5A cost smps 1500 w design PFC smps design
Text: A New SMPS Non Punch Thru IGBT Replaces MOSFET in SMPS High Frequency Application Richard Francis, Marco Soldano International Rectifier Corporation El Segundo, CA, USA As presented at APEC 03 Abstract— The continuous request from the market for higher power
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IRG4PC50W,
IRGP50B60WD1
IRFPS40N60K
AN-941
difference between IGBT and MOSFET IN inverter
2kw pfc
smps igbt
IRG4PC50W EQUIVALENT
2kw mosfet
48V SMPS
AN-941
IGBT 600V 5A cost
smps 1500 w design
PFC smps design
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circuit diagram of ELECTRONIC BALLAST for 40 watt
Abstract: ELECTRONIC BALLAST 36W circuit diagram dali schematic pic16f628 ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn DALI CD with software and design RS232-DALI pc to Microcontroller communication through IR fluorescent ballasts 36w TRANSISTOR IR2159
Text: Digitally Addressable DALI Dimming Ballast Cecilia Contenti and Tom Ribarich Applications Engineer, International Rectifier, Lighting Group, 101S Sepulveda Blv. El Segundo, CA, 90245-4382 tel. 310 726-8927, fax. (310)726-8846, email: [email protected] as presented at APEC 2002
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100KOhm,
820KOhm,
SMT1206
360KOhm,
circuit diagram of ELECTRONIC BALLAST for 40 watt
ELECTRONIC BALLAST 36W circuit diagram
dali schematic
pic16f628
ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn
DALI CD with software and design
RS232-DALI
pc to Microcontroller communication through IR
fluorescent ballasts 36w TRANSISTOR
IR2159
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Untitled
Abstract: No abstract text available
Text: AP1003BST Preliminary Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 4.7m ID G 17.3A S Description The AP1003BST used the latest APEC Power MOSFET silicon
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AP1003BST
AP1003BST
25ion
100us
100ms
Fig10.
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active clamp flyback isolated pfc
Abstract: Christophe Basso NCP120X 33260 NCP1200P60 schematic diagram dc-dc flyback converter 24 volt output smps design ncp1200d60 MC33063 application note schematic circuit diagram of flyback PFC converter for LED
Text: Driving Efficient Power Solutions from Standby to Active Mode from line to load Dhaval Dalal Technical Marketing Director APEC-exhibitor-sem-ON February 2004 Christophe Basso Applications Manager 1 www.onsemi.com Agenda • • • • • Power train overview – new complexities
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AND8119/D
active clamp flyback isolated pfc
Christophe Basso
NCP120X
33260
NCP1200P60
schematic diagram dc-dc flyback converter
24 volt output smps design
ncp1200d60
MC33063 application note
schematic circuit diagram of flyback PFC converter for LED
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Untitled
Abstract: No abstract text available
Text: AP11N50I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D BVDSS RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 500V 0.62 11A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP11N50I
O-220CFM
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP40T10GR RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 100V Single Drive Requirement RDS ON 35m Fast Switching Characteristic ID 100% Avalanche Test D 40A G S Description Advanced Power MOSFETs from APEC provide the
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AP40T10GR
O-262
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP0403GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D 30V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 4.5m 75A S Description Advanced Power MOSFETs from APEC provide the
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AP0403GH
O-252
O-252
0403GH
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Untitled
Abstract: No abstract text available
Text: AP72T03GP RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D RDS ON Low On-resistance Fast Switching Characteristic ID G 30V 9.5m 65A S Description Advanced Power MOSFETs from APEC provide the
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AP72T03GP
O-220
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP15P15GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D RDS ON Simple Drive Requirement ID Fast Switching Characteristic G -140V 180m -15A S Description Advanced Power MOSFETs from APEC provide the
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AP15P15GI
-140V
O-220CFM
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP9976GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower Gate Charge Fast Switching Characteristic ID G 60V 21m 30A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP9976GP
O-220
O-220
9976GP
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Untitled
Abstract: No abstract text available
Text: AP0603GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 6mΩ ID G 72A S Description Advanced Power MOSFETs from APEC provide the
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AP0603GH
O-252
100us
100ms
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0403GH
Abstract: TO252 rthjc ap0403gh TO-252 MOSFET 220E-2
Text: AP0403GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 4.5mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide the
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AP0403GH
O-252
O-252
0403GH
0403GH
TO252 rthjc
ap0403gh
TO-252 MOSFET
220E-2
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Untitled
Abstract: No abstract text available
Text: AP4435GYT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free BVDSS RDS ON ID D -30V 21m -11A G S D Description Advanced Power MOSFETs from APEC provide the
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AP4435GYT-HF
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Untitled
Abstract: No abstract text available
Text: AP4455GEYT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free D G BVDSS RDS ON ID D S Description Advanced Power MOSFETs from APEC provide the
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AP4455GEYT-HF
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100ms
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AP72T03GP
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: AP72T03GP RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low On-resistance ▼ Fast Switching Characteristic BVDSS 30V RDS ON 9.5mΩ ID G 65A S Description Advanced Power MOSFETs from APEC provide the
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AP72T03GP
O-220
100us
100ms
Fig10.
AP72T03GP
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Untitled
Abstract: No abstract text available
Text: AP2609GYT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free BVDSS RDS ON ID D -20V 18m -11.3A G S D Description Advanced Power MOSFETs from APEC provide the
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AP2609GYT-HF
100ms
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Untitled
Abstract: No abstract text available
Text: AP13N50W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D BVDSS RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 500V 0.52 14A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP13N50W
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Untitled
Abstract: No abstract text available
Text: AP72T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D 30V RDS ON Low On-resistance Fast Switching Characteristic 9m ID G 62A S Description GD Advanced Power MOSFETs from APEC provide the
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AP72T03GH/J
O-252
AP72T03GJ)
O-251
100us
100ms
Fig10.
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ap15p15gh
Abstract: No abstract text available
Text: AP15P15GH RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement BVDSS -140V RDS ON 180mΩ ID ▼ Fast Switching Characteristic G -15A S Description Advanced Power MOSFETs from APEC provide the
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-140V
O-252
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100ms
ap15p15gh
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Untitled
Abstract: No abstract text available
Text: AP9562GP-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G -40V 32m -27A RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the
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AP9562GP-HF
O-220
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP6680AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance D BVDSS 30V RDS ON Simple Drive Requirement Fast Switching Characteristic 11m ID G 12A S D Description D D Advanced Power MOSFETs from APEC provide the
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AP6680AGM
6680AGM
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10N70
Abstract: No abstract text available
Text: AP10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 650V 0.62 10A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP10N70I-A
O-220CFM
O-220CFM
10N70I
10N70
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Untitled
Abstract: No abstract text available
Text: AP20N15GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS Single Drive Requirement RDS ON Fast Switching Characteristic ID 150V 100m 20A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the
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100ms
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