Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    APPLICATION OF E AND D MOSFET Search Results

    APPLICATION OF E AND D MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK421G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    APPLICATION OF E AND D MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CA4013

    Abstract: coolaudio amidon CD4013BE mosfet h bridge inverter 100w class-d audio amplifier circuit diagram 12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM HIP4080AIP 100w inverter schematic diagram CA3290
    Text: Class-D Audio II Evaluation Board HIP4080AEVAL2 Application Note March 1996 AN9525.2 Author: George E. Danz Intersil Coolaudio Products Introduction Class-D Efficiency Historically, audio amplifiers have been configured as Class A, B or A/B and the art of design is well-known. Also well known is


    Original     		HIP4080AEVAL2) AN9525 HIP4080AEVAL2 CA4013 coolaudio amidon CD4013BE mosfet h bridge inverter 100w class-d audio amplifier circuit diagram 12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM HIP4080AIP 100w inverter schematic diagram CA3290 PDF

    Super Capacitor Charger

    Abstract: igbt dc to dc converter capacitor charging capacitor 1 micro farad / 16 volts Electrolytic xenon flashlight driver how to make a Super Capacitor 3.7V Li-Ion battery charge controller with 5v inp 100 micro farad capacitor super cap 5.5v SUPER CAPACITOR k800i
    Text: APPLICATION NOTE AN-130 Storing Power with Super Capacitors A EC D T VA TO NC CH ED AN IN F G O E R W MA IT HO TIO UT N NO TI C E Portable system designers have sharply reduced the power requirements of their systems in active and standby mode over the last several years, a growing number of applications pose an entirely different problem. Some of the most


    Original     		AN-130 AN-130 Super Capacitor Charger igbt dc to dc converter capacitor charging capacitor 1 micro farad / 16 volts Electrolytic xenon flashlight driver how to make a Super Capacitor 3.7V Li-Ion battery charge controller with 5v inp 100 micro farad capacitor super cap 5.5v SUPER CAPACITOR k800i PDF

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2332N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


    Original     		AM2332N OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: HT7939 High Current and Performance White LED Driver Features • Input range from 2.6V~5.5V · Under voltage lock-out protection · Built-in Power MOSFET · 1.2MHz fixed switching frequency · Can drive up to 39 White LEDs with a 5V input · High efficiency - up to 90%


    Original     		HT7939 OT23-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: AMG-LI080 Timer/Dimmer with Gate Driver, Zero Detection & Protection 1. Functional Description The AMG-LI080 is a timer IC with a gate driver output for MOSFETs. The timer is set by a zero crossing detector and reset by external RC. This IC features protection against overcurrent, over-voltage and over-temperature. This IC is well suited for several kinds of dimmer


    Original     		AMG-LI080 AMG-LI080 10VDC. 12VDC PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


    Original     		Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFR9220TRPBF

    Abstract: No abstract text available
    Text: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) () VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK


    Original     		IRFR9220, IRFU9220, SiHFR9220 SiHFU9220 IRFUFU9220, O-252) O-251) IRFR9220TRPBF PDF

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Diode HER 507 PDF

    MARKING BF

    Abstract: SI5419DU PowerPAK ChipFET Single
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		Si5419DU 2002/95/EC Si5419DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING BF PowerPAK ChipFET Single PDF

    SIHFR9220TR-GE3

    Abstract: SIHFR9220TRL-GE3
    Text: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220)


    Original     		IRFR9220, IRFU9220, SiHFR9220 SiHFU9220 IRFUFU9220, 2002/95/EC O-252) SIHFR9220TR-GE3 SIHFR9220TRL-GE3 PDF

    s0913

    Abstract: No abstract text available
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s0913 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1058X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) Qg (Typ.) 0.091 at VGS = 4.5 V 1.3a 1.1 3.5 0.124 at VGS = 2.5 V • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		Si1058X SC-89 Si1058X-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1072X Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) Qg (Typ.) 0.093 at VGS = 10 V 1.3a 1.2 5.41 0.129 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1072X 2002/95/EC SC-89 Si1072X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    PowerPAK ChipFET Single

    Abstract: No abstract text available
    Text: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability


    Original     		Si5410DU Si5410DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PowerPAK ChipFET Single PDF

    1000 watt mosfet power amplifier

    Abstract: 12VDC power regulator UC3573 1000 watt buck converter 300 watt mosfet amplifier
    Text: DN-70 U N IT R D D E Design Note UC3573 Buck Regulator PWM Control 1C Typical Application Circuit for +12VDC Input to +5VDC/1A Output Also : Demonstration Kit Circuit Schematic and List of Materials by Chuck Melchin and Bill Andreycak Figure 2. Photo of UC3573 Demo Kit


    OCR Scan     		DN-70 UC3573 12VDC iF/25V 100kHz F/50V 47jxF/50V 2nF/50V 27pF/50V 1000 watt mosfet power amplifier 12VDC power regulator 1000 watt buck converter 300 watt mosfet amplifier PDF

    UC3861-64

    Abstract: 104 csk capacitor Steigerwald A Comparison of Half Bridge Resonant SEM-600A zvs in buck converter design and implementation resonant converter theory 102 csk capacitor a comparison of half bridge resonant converter ZERO VOLTAGE SWITCH UC3861 with zvs
    Text: y _ U M IT R O D E U-138 APPLICATION NOTE Zero Voltage Switching Resonant Power Conversion Bill Andreycak Abstract The technique of zero voltage switching in modem power conversion is explored. Several ZVS topologies and applications, limitations of the ZVS technique, and a generalized design


    OCR Scan     		U-138 UC3861-64 104 csk capacitor Steigerwald A Comparison of Half Bridge Resonant SEM-600A zvs in buck converter design and implementation resonant converter theory 102 csk capacitor a comparison of half bridge resonant converter ZERO VOLTAGE SWITCH UC3861 with zvs PDF

    Temic Semiconductors

    Abstract: CECC9000
    Text: Temic S e m i c o n d u c t o r s Application-Specific ICs for Aerospace & Military At TEMIC Semiconductors, we provide a full range of components for the demanding environ­ ment of the space, defense, and avionics industries. Ensuring a constant renewal of our commitment to


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UCC1570 UCC2570 UCC3570 IN T E G R A T E D C IR C U IT S UNITRODE Low Power Pulse Width Modulator DESCRIPTION FEATURES The UCC1570 family of pulse width modulators is intended for application in isolated switching supplies using primary side control and a voltage mode feed­


    OCR Scan     		UCC1570 UCC2570 UCC3570 500kHz PDF

    UC3843 application note buck

    Abstract: uc3842 application circuit UC3843 buck converter application note UC3845 application note buck uc3842 equivalent buck uc3842 application note uc3842 buck uc3843 UC3845 buck power supply with uc3842
    Text: U-100A _ U N ITR O D E APPLICATION NOTE UC3842/3/4/5 PROVIDES LOW-COST CURRENT-MODE CONTROL INTRODUCTION CURRENT-MODE CONTROL The fundamental challenge of power supply design is to simultaneously realize two conflicting objectives; good electrical performance and low cost. The UC3842/3/4/5


    OCR Scan     		U-100A UC3842/3/4/5 UC3842 UC3843 application note buck uc3842 application circuit UC3843 buck converter application note UC3845 application note buck uc3842 equivalent buck uc3842 application note buck uc3843 UC3845 buck power supply with uc3842 PDF

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE F a u lt-P ro te c te d a n d F a u lt-P ro te c tin g CM OS M u ltip le x e rs Selecting an analog multiplexer mux for a measurement system involves more than just getting the pinouts and the number of channels right. Input signals (often im­


    OCR Scan     		MAX378 MAX378 PDF

    014 IR MOSFET Transistor

    Abstract: NDP706B multiple mosfet gate driver parallel MOSFET Transistors LM9061 LM9061M LM9061N M08A mfha
    Text: O ctober 1994 LM9061 Power MOSFET Driver with Lossless Protection General Description Features Th e LM9061 is a charge-pum p device w hich provides the gate drive to any size external power M O S FET configured a s a high side driver or sw itch. A CM O S logic com patible


    OCR Scan     		LM9061 LM9061 M1-41) Lj5D1124 014 IR MOSFET Transistor NDP706B multiple mosfet gate driver parallel MOSFET Transistors LM9061M LM9061N M08A mfha PDF

    IC 555 timer low volt

    Abstract: Si9910
    Text: ^ ^ ^ T in c o r p n r a t e d SÌ9910 Adaptive Power MOSFET Driver1 FEATURES dv/dt and d i/d t Control Undervoltage Protection Short-circuit Protection • tn- Shoot-through Current Limiting • Low Quiescent Current • Com patible with W id e Range of MOSFET Devices


    OCR Scan     		Si9910 IC 555 timer low volt PDF

    Power MOSFET TT 2146

    Abstract: transistor TT 2146 mosfet TT 2146 MOTOROLA N-Channel MOSFET
    Text: MOTOROLA O rder this docum ent by M RF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET


    OCR Scan     		RF185/D MRF185 Power MOSFET TT 2146 transistor TT 2146 mosfet TT 2146 MOTOROLA N-Channel MOSFET PDF