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    APPLICATIONS OF SINGLE STAGE COMMON EMITTER Search Results

    APPLICATIONS OF SINGLE STAGE COMMON EMITTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TCWA1225G Toshiba Electronic Devices & Storage Corporation High Power Switch / SPDT / WCSP14 Visit Toshiba Electronic Devices & Storage Corporation
    TC7S66FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-353 (USV), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7S66F Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-25 (SMV), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC4S66FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-353 (USV), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    APPLICATIONS OF SINGLE STAGE COMMON EMITTER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    nano*ammeter

    Abstract: LM1107 nanoammeter SQUARE WAVE TO SINE WAVE schematic diagram basic dc nanoammeter diagram modified sine wave inverter 12v circuit diagram thyristor inverter 2N3252 LM4250 POWER SUPPLY SWITCHING DOWN STEP
    Text: National Semiconductor Application Note 71 George Cleveland July 1972 Introduction Referring to Figure 1, Q1 and Q2 are high current gain lateral PNPs connected as a differential pair. R1 and R2 provide emitter degeneration for greater stability at high bias currents. Q3 and Q4 are used as active loads for Q1 and Q2 to


    Original     		LM4250 AN-71 nano*ammeter LM1107 nanoammeter SQUARE WAVE TO SINE WAVE schematic diagram basic dc nanoammeter diagram modified sine wave inverter 12v circuit diagram thyristor inverter 2N3252 POWER SUPPLY SWITCHING DOWN STEP PDF

    GT60N321

    Abstract: No abstract text available
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High Power Switching Applications The 4th Generation • FRD Included Between Emitter and Gollector • Enhancement-Mode • High Speed • Low Saturation Voltage IGBT : tf = 0.25 µs typ. (@IC = 60 A)


    Original     		GT60N321 GT60N321 PDF

    gt60n321

    Abstract: No abstract text available
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)


    Original     		GT60N321 gt60n321 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications • FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs typ. (IC = 60 A)


    Original     		GT50G321 2-21F2C PDF

    gt60n321

    Abstract: GT60
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)


    Original     		GT60N321 gt60n321 GT60 PDF

    gt60n321

    Abstract: TOSHIBA IGBT DATA BOOK GT60N32
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High Power Switching Applications The 4th Generation • • • • FRD Included Between Emitter and Gollector Enhancement-Mode High Speed IGBT : tf = 0.25 µs typ. (@IC = 60 A)


    Original     		GT60N321 gt60n321 TOSHIBA IGBT DATA BOOK GT60N32 PDF

    GT60N321

    Abstract: No abstract text available
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm • FRD included between emitter and collector · Enhancement-mode · High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)


    Original     		GT60N321 GT60N321 PDF

    Untitled

    Abstract: No abstract text available
    Text: GHz20060 60 Watts PEP, 26 Volts, Class AB 1800 - 2000 MHz Updated Feb 2001 GENERAL DESCRIPTION CASE OUTLINE The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is


    Original     		GHz20060 GHz20060 PDF

    GT40Q323

    Abstract: No abstract text available
    Text: GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector


    Original     		GT40Q323 GT40Q323 PDF

    GT60M323

    Abstract: No abstract text available
    Text: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60M323 GT60M323 PDF

    GT60N32

    Abstract: GT60N321
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)


    Original     		GT60N321 GT60N32 GT60N321 PDF

    gt40q322

    Abstract: No abstract text available
    Text: GT40Q322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q322 Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector • The 4th generation


    Original     		GT40Q322 10oducts gt40q322 PDF

    GT50G321

    Abstract: No abstract text available
    Text: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 Fourth Generation IGBT Current Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A)


    Original     		GT50G321 GT50G321 PDF

    GT60M323

    Abstract: No abstract text available
    Text: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60M323 GT60M323 PDF

    ecl 806

    Abstract: CML ECL termination PLE 2 - 25va Vterm pecl logic voltage levels
    Text: Application Note 806 LVPECL, PECL, ECL Logic and Termination March 2009 by: Ken Johnson and Bob Gubser ABSTRACT This application note will highlight characteristics of Pletronics Low Voltage Positive Emitter Coupled Logic LVPECL frequency control products and provide guidance for


    Original     		PDF

    2N3866 MOTOROLA

    Abstract: LT1719 so-8 2N3866 pin diagram 2N3866 MOTOROLA s parameters 1N5711 2N3866 LT1719 LT1719CS8 LT1719IS8 TC02
    Text: LT1719 4.5ns Single/Dual Supply 3V/5V Comparator with Rail-to-Rail Output U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4.2mA at 3V Separate Input and Output Power Supplies Output Optimized for 3V and 5V Supplies


    Original     		LT1719 100mV LT1016 LT1116 LT1394 LT1671 LT1720/LT1721 1719f 2N3866 MOTOROLA LT1719 so-8 2N3866 pin diagram 2N3866 MOTOROLA s parameters 1N5711 2N3866 LT1719 LT1719CS8 LT1719IS8 TC02 PDF

    5v input 3v output

    Abstract: 1N5711 2N3866 LT1719 LT1719CS8 LT1719IS8 TC02 Transistor 2N3866 10h124
    Text: Final Electrical Specifications LT1719 4.5ns Single/Dual Supply 3V/5V Comparator with Rail-to-Rail Output September 1999 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive Low Power: 4.2mA at 3V Separate Input and Output Power Supplies


    Original     		LT1719 100mV LT1016 LT1116 LT1394 LT1671 LT1720/LT1721 1719i 5v input 3v output 1N5711 2N3866 LT1719 LT1719CS8 LT1719IS8 TC02 Transistor 2N3866 10h124 PDF

    GT60N32

    Abstract: gt60n321 GT60 IC601
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)


    Original     		GT60N321 GT60N32 gt60n321 GT60 IC601 PDF

    GT40Q322

    Abstract: No abstract text available
    Text: GT40Q322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q322 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector


    Original     		GT40Q322 GT40Q322 PDF

    GT60N322

    Abstract: No abstract text available
    Text: GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.4 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60N322 15oducts GT60N322 PDF

    GT60M323

    Abstract: GT60M
    Text: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60M323 GT60M323 GT60M PDF

    GT50G321

    Abstract: No abstract text available
    Text: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 Fourth Generation IGBT Current Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed: tf = 0.30 s typ. (IC = 60 A)


    Original     		GT50G321 GT50G321 PDF

    GT60M323

    Abstract: No abstract text available
    Text: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60M323 120HIBA GT60M323 PDF

    041 DIODE

    Abstract: GT60N322
    Text: GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.4 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60N322 041 DIODE GT60N322 PDF