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Microchip Technology Inc APT1001RBVRG MOSFET N-CH 1000V 11A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT1001RBVRG	Tube	37		1	1 $14.09 10 $14.09 100 $11.425 1000 $11.425 10000 $11.425	Buy Now
Avnet Americas	APT1001RBVRG	Tube		26 Weeks	40	1 $13.8082 10 $13.8082 100 $11.13938 1000 $11.46944 10000 $11.46944	Buy Now
Mouser Electronics	APT1001RBVRG		701			1 $14.09 10 $14.09 100 $14.09 1000 $12.16 10000 $12.16	Buy Now
Newark	APT1001RBVRG	Bulk			40	1 $14.09 10 $14.09 100 $12.16 1000 $11.43 10000 $11.43	Buy Now
Microchip Technology Inc	APT1001RBVRG	Tube		26 Weeks		1 $14.09 10 $14.09 100 $12.16 1000 $11.16 10000 $10.79	Buy Now

Onlinecomponents.com	APT1001RBVRG					1 - 10 $13.64 100 $11.57 1000 $10.95 10000 $10.95	Buy Now
TME	APT1001RBVRG				1	1 $20.45 10 $16.09 100 $16.09 1000 $16.09 10000 $16.09	Get Quote
NAC	APT1001RBVRG	Tube			27	1 $13.44 10 $13.44 100 $12.19 1000 $11.15 10000 $11.15	Buy Now
Richardson RFPD	APT1001RBVRG				40	1 - 10 - 100 $12.07 1000 $12.07 10000 $12.07	Buy Now
Avnet Silica	APT1001RBVRG			28 Weeks	40	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	APT1001RBVRG			27 Weeks	40	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	APT1001RBVRG					1 - 10 $13.64 100 $11.57 1000 $10.95 10000 $10.95	Buy Now
Microchip Technology Inc APT1001RBN MOSFET N-CH 1000V 11A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT1001RBN	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APT1001R1BN MOSFET N-CH 1000V 10.5A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT1001R1BN	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc	APT1001R1BN			22 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	APT1001R1BN					1 $0 10 $0 100 $0 1000 $0 10000 $0	Buy Now
NAC	APT1001R1BN					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc APT1001RSVRG MOSFET N-CH 1000V 11A D3PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT1001RSVRG	Tube			40	1 - 10 - 100 $15.14 1000 $15.14 10000 $15.14	Buy Now
Avnet Americas	APT1001RSVRG	Tube		26 Weeks	40	1 $14.8372 10 $14.8372 100 $12.129 1000 $12.3353 10000 $12.3353	Buy Now
Mouser Electronics	APT1001RSVRG					1 $15.14 10 $15.14 100 $15.14 1000 $15.14 10000 $15.14	Get Quote
Verical	APT1001RSVRG		26		3	1 - 10 $25.9859 100 $25.9859 1000 $25.9859 10000 $25.9859	Buy Now
Newark	APT1001RSVRG	Bulk			40	1 $15.14 10 $15.14 100 $13.07 1000 $12.29 10000 $12.29	Buy Now

Microchip Technology Inc	APT1001RSVRG	Tube		26 Weeks		1 $15.14 10 $15.14 100 $13.07 1000 $12 10000 $11.59	Buy Now
Onlinecomponents.com	APT1001RSVRG					1 - 10 $14.67 100 $12.44 1000 $11.77 10000 $11.77	Buy Now
TME	APT1001RSVRG		26		1	1 $27.4 10 $21.7 100 $21.7 1000 $21.7 10000 $21.7	Buy Now
NAC	APT1001RSVRG	Tube			25	1 $14.46 10 $14.46 100 $13.11 1000 $11.99 10000 $11.99	Buy Now
Richardson RFPD	APT1001RSVRG				40	1 - 10 - 100 $12.98 1000 $12.98 10000 $12.98	Buy Now
Avnet Silica	APT1001RSVRG			28 Weeks	40	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	APT1001RSVRG					1 - 10 $14.67 100 $12.44 1000 $11.77 10000 $11.77	Buy Now
Microchip Technology Inc APT1001RBVFRG MOSFET N-CH 1000V 11A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT1001RBVFRG	Tube			40	1 - 10 - 100 $15.34 1000 $15.34 10000 $15.34	Buy Now
Avnet Americas	APT1001RBVFRG	Tube		32 Weeks	40	1 $13.3378 10 $13.3378 100 $12.8115 1000 $12.6801 10000 $12.6801	Buy Now
Mouser Electronics	APT1001RBVFRG					1 $15.34 10 $15.34 100 $15.34 1000 $15.34 10000 $15.34	Get Quote
Verical	APT1001RBVFRG		10		5	1 - 10 $26.585 100 $17.901 1000 $17.563 10000 $17.563	Buy Now
Newark	APT1001RBVFRG	Bulk			40	1 $15.34 10 $15.34 100 $13.22 1000 $12.43 10000 $12.43	Buy Now

Microchip Technology Inc	APT1001RBVFRG	Tube		32 Weeks		1 $15.34 10 $15.34 100 $13.22 1000 $12.15 10000 $11.76	Buy Now
Onlinecomponents.com	APT1001RBVFRG		14			1 - 10 $20.45 100 $13.77 1000 $13.11 10000 $13.11	Buy Now
TME	APT1001RBVFRG				1	1 $22.05 10 $17.73 100 $17.73 1000 $17.73 10000 $17.73	Get Quote
NAC	APT1001RBVFRG	Tube			25	1 $14.63 10 $14.63 100 $13.27 1000 $12.13 10000 $12.13	Buy Now
Richardson RFPD	APT1001RBVFRG				40	1 - 10 - 100 $13.14 1000 $13.14 10000 $13.14	Buy Now
Avnet Silica	APT1001RBVFRG			34 Weeks	40	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	APT1001RBVFRG			33 Weeks	40	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	APT1001RBVFRG		14			1 - 10 $20.45 100 $13.77 1000 $13.11 10000 $13.11	Buy Now

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APT1001 Datasheets (37)

Part	Manufacturer	Description	Datasheet Type	PDF
APT1001	Advanced Power Technology	Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs	Original	PDF
APT1001R1AVR	Advanced Power Technology	POWER MOS V 1000V 9A 1.100 Ohm	Original	PDF
APT1001R1AVR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT1001R1BN	Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT1001R1BN	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10.5A TO247AD	Original	PDF
APT1001R1BNR	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF
APT1001R1BVFR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT1001R1DN	Advanced Power Technology	APT Power MOS IV Commercial and Custom DIE	Scan	PDF
APT1001R1HN	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF
APT1001R1HVR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT1001R1HVR	Unknown	High Voltage, 1000V 8.4A, MOS-FET N-Channel enhanced	Original	PDF
APT1001R1SN	Advanced Power Technology	Power MOS IV	Scan	PDF
APT1001R3BN	Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT1001R3HN	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF

APT1001R6BFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT1001R6BFLL	Microsemi	Power MOS 7 Low Loss FREDFET	Original	PDF
APT1001R6BFLLG	Advanced Power Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 8A TO-247	Original	PDF
APT1001R6BLL	Advanced Power Technology	POWER MOS 7 MOSFET	Original	PDF
APT1001R6BN	Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT1001R6SFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF

APT1001 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT1001RBVR Abstract: No abstract text available Text: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT1001RBVR O-247 O-247 APT1001RBVR
TO-204AE Package Abstract: No abstract text available Text: APT1001R1AVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE	Original	PDF	APT1001R1AVR 100mS O-204AE) TO-204AE Package
TO-258 Abstract: d 434 Text: APT1001R1HVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE 50 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE	Original	PDF	APT1001R1HVR 100mS O-258 TO-258 d 434
Untitled Abstract: No abstract text available Text: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR
APT1001RBVFR Abstract: No abstract text available Text: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	Original	PDF	APT1001RBVFR O-247 O-247 APT1001RBVFR
Untitled Abstract: No abstract text available Text: APT1001R1BFLC 1000V POWER MOS VITM 11A 1.100W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.	Original	PDF	APT1001R1BFLC O-247 O-247 APT1001R1BFLC
Untitled Abstract: No abstract text available Text: APT1001RBVFR APT1001RSVFR 1000V 1.00Ω 11A BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR
Untitled Abstract: No abstract text available Text: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 8A 1.60Ω 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ®	Original	PDF	APT1001R6BFLL APT1001R6BFLL APT1001R6SFLL O-247
Untitled Abstract: No abstract text available Text: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN	OCR Scan	PDF	APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN
APT801R2DN Abstract: APT5085DN Text: ADVANCED POWER TECHNOLOGY Tfl Dlf\| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN	OCR Scan	PDF	APT1001RCN APT1001R2CN APT9090CN APT901RCN APT8075CN APT8090CN APT6035CN APT6040CN APT5530CN APT5532CN APT801R2DN APT5085DN
apt4020an Abstract: No abstract text available Text: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN	OCR Scan	PDF	APT1001RAN APT1001R2AN APT9090AN APT901 APT8075AN APT8090AN APT6035AN APT6040AN APT5530AN APT5532AN apt4020an
Untitled Abstract: No abstract text available Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN	OCR Scan	PDF	APT1001R6BN 1001R6BN O-247AD
APT1001R1HN Abstract: APT1001R3HN APT901R1HN APT901R3HN Text: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	PDF	02S11 APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901r1hn 1001r1hn 901r3hn 1001r3hn HGURE13,
Untitled Abstract: No abstract text available Text: APT1001R1HVR ADVANCED POW ER Te c h n o l o g y 1000V 9A 1.1000 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	PDF	APT1001R1HVR O-258 APT1001R1HVR

APT1001R1AN Abstract: APT1001R3AN Text: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	PDF	APT1001R1AN APT901R1 APT1001R3AN APT901R3AN 901R1AN 1001R1 901R3AN 1001R3AN O-204AA)
Untitled Abstract: No abstract text available Text: ADVANCED POW ER Te c h n o l o g y APT1001R1SN 1000V 10.5A 1.1 Ofl POWER MOS IV' N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V D SS >D All Ratings: T c = 25°C unless otherwise specified. Parameter APT1001R1SN UNIT Drain-Source Voltage	OCR Scan	PDF	APT1001R1SN APT1001R1SN
s3v12 Abstract: No abstract text available Text: A d van ced P o w er Te c h n o l o g y • Q D APT1001RBN APT901RBN Os 1000V 11.0A 1.00U 900V 11.0A 1.000 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter	OCR Scan	PDF	APT1001RBN APT901RBN APT1001R/901RBN O-247AD s3v12
APT1001R1BNR Abstract: 1001R1 Text: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U APT1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	PDF	APT1001RBNR APT1001R1BNR 001R1Ö -100m O-247AD 1001R1
nt 6600 G Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700	OCR Scan	PDF	APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Untitled Abstract: No abstract text available Text: APT1001R1AVR • R A dvanced W .\A pow er Te c h n o lo g y " 9a 1000v 1.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	PDF	APT1001R1AVR 1000v APT1001R1AVR 00A/ns IL-STD-750
1001r1bn Abstract: APT1001R-18NR APT1001RBNR APT1001R1BNR Text: O D O S A d van ced R o w er Te c h n o lo g y APT1001RBNR 1000V 11.0A 1.00Q APT.1001R1BNR 1000V 10.5A 1.10D POWER MOS IV® UIS RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd *0M V GS VGSM po 1J' ‘ STG	OCR Scan	PDF	APT1001RBNR APT1001R-18NR APT1001R1BNR APT1001R/1001R1 O-247AD 1001r1bn APT1001R-18NR
APT901RBN Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN	OCR Scan	PDF	000027b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT3520BN
1001r1bn Abstract: 130Q APT1001R3BN diode 1000V Text: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.	OCR Scan	PDF	APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN O-247AD 130Q diode 1000V
Untitled Abstract: No abstract text available Text: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	PDF	APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN APT1001R1/901R1/1001R3/901R3BN O-247AD

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APT1001 Price and Stock

Microchip Technology Inc APT1001RBVRG

Microchip Technology Inc APT1001RBN

Microchip Technology Inc APT1001R1BN

Microchip Technology Inc APT1001RSVRG

Microchip Technology Inc APT1001RBVFRG

APT1001 Datasheets (37)

APT1001 Datasheets Context Search

APT1001RBVR

TO-204AE Package

TO-258

Untitled

APT1001RBVFR

Untitled

Untitled

Untitled

Untitled

APT801R2DN

apt4020an

Untitled

APT1001R1HN

Untitled

APT1001R1AN

Untitled

s3v12

APT1001R1BNR

nt 6600 G

Untitled

1001r1bn

APT901RBN

1001r1bn

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