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Microchip Technology Inc APT10025JVR MOSFET N-CH 1000V 34A ISOTOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT10025JVR	Tube	10		1	1 $86.5 10 $86.5 100 $70.225 1000 $70.225 10000 $70.225	Buy Now
Avnet Americas	APT10025JVR	Tube		26 Weeks	10	1 - 10 $76.68578 100 $69.94435 1000 $69.94435 10000 $69.94435	Buy Now
Mouser Electronics	APT10025JVR		38			1 $86.5 10 $86.5 100 $74.72 1000 $74.72 10000 $74.72	Buy Now
Newark	APT10025JVR	Bulk			10	1 $86.5 10 $86.5 100 $74.72 1000 $70.2 10000 $70.2	Buy Now
Microchip Technology Inc	APT10025JVR	Tube		26 Weeks		1 $86.5 10 $86.5 100 $74.72 1000 $68.53 10000 $66.29	Buy Now

Onlinecomponents.com	APT10025JVR					1 - 10 $72.26 100 $72.26 1000 $72.26 10000 $72.26	Buy Now
TME	APT10025JVR				1	1 $125.08 10 $99.47 100 $99.47 1000 $99.47 10000 $99.47	Get Quote
NAC	APT10025JVR	Tube			4	1 $80.26 10 $80.26 100 $73.92 1000 $68.51 10000 $68.51	Buy Now
Richardson RFPD	APT10025JVR				1	1 $77.16 10 $77.16 100 $74.19 1000 $74.19 10000 $74.19	Buy Now
Master Electronics	APT10025JVR					1 - 10 $72.26 100 $72.26 1000 $72.26 10000 $72.26	Buy Now
Microchip Technology Inc APT10025JVFR MOSFET N-CH 1000V 34A ISOTOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT10025JVFR	Tube			10	1 - 10 $91.711 100 $91.711 1000 $91.711 10000 $91.711	Buy Now
Avnet Americas	APT10025JVFR	Tube		32 Weeks	10	1 - 10 $90.7929 100 $74.14001 1000 $74.14001 10000 $74.14001	Buy Now
Mouser Electronics	APT10025JVFR					1 - 10 $91.71 100 $91.71 1000 $91.71 10000 $91.71	Get Quote
Newark	APT10025JVFR	Bulk			10	1 $91.71 10 $91.71 100 $79.2 1000 $74.43 10000 $74.43	Buy Now
Microchip Technology Inc	APT10025JVFR	Tube		32 Weeks		1 $91.71 10 $91.71 100 $79.2 1000 $72.66 10000 $70.27	Buy Now

Onlinecomponents.com	APT10025JVFR					1 - 10 $76.6 100 $76.6 1000 $76.6 10000 $76.6	Buy Now
TME	APT10025JVFR				1	1 $132.58 10 $105.43 100 $105.43 1000 $105.43 10000 $105.43	Get Quote
NAC	APT10025JVFR	Tube			4	1 $85.07 10 $85.07 100 $78.36 1000 $72.62 10000 $72.62	Buy Now
Richardson RFPD	APT10025JVFR				10	1 - 10 $81.78 100 $78.64 1000 $78.64 10000 $78.64	Buy Now
Master Electronics	APT10025JVFR					1 - 10 $76.6 100 $76.6 1000 $76.6 10000 $76.6	Buy Now

APT10025 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
APT10025JLC	Advanced Power Technology	POWER MOS VI 1000V 34A 0.250 Ohm	Original	PDF
APT10025JLC	Advanced Power Technology	N-Channel enhancement mode power MOSFET	Original	PDF
APT10025JVFR	Advanced Power Technology	N-Channel enhancement mode power MOSFET	Original	PDF
APT10025JVFR	Advanced Power Technology	POWER MOS V 1000V 34A 0.250 Ohm	Original	PDF
APT10025JVFR	Microsemi	Power MOS V FREDFET	Original	PDF
APT10025JVR	Advanced Power Technology	N-Channel enhancement mode power MOSFET	Original	PDF
APT10025JVR	Microsemi	Power MOS V MOSFET	Original	PDF
APT10025PVR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF

APT10025 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
APT10025JVR Abstract: DSA003650 Text: APT10025JVR 34A 0.250Ω 1000V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10025JVR OT-227 E145592 APT10025JVR DSA003650	PDF
APT10025JVFR Abstract: No abstract text available Text: APT10025JVFR 34A 0.250Ω 1000V POWER MOS V FREDFET S S Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	Original	APT10025JVFR OT-227 APT10025JVFR	PDF
Untitled Abstract: No abstract text available Text: APT10025JVFR 34A 0.250Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10025JVFR OT-227 E145592	PDF
Untitled Abstract: No abstract text available Text: APT10025JFLC 1000V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is	Original	APT10025JFLC OT-227 APT10025JF	PDF
u 5601 Abstract: APT10025JVFR Text: APT10025JVFR 34A 0.250Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10025JVFR OT-227 E145592 u 5601 APT10025JVFR	PDF
5809 Abstract: No abstract text available Text: APT10025PVR 33A 0.250Ω 1000V POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10025PVR 5809	PDF
APT10025JVFR Abstract: No abstract text available Text: APT10025JVFR 34A 0.250Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10025JVFR OT-227 E145592 APT10025JVFR	PDF
u 5601 Abstract: APT10025JVFR DSA003649 Text: APT10025JVFR 34A 0.250Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10025JVFR OT-227 E145592 u 5601 APT10025JVFR DSA003649	PDF
APT10025JLC Abstract: No abstract text available Text: APT10025JLC 1000V 34A POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,	Original	APT10025JLC OT-227 APT10025JLC	PDF
APT10025JLC Abstract: No abstract text available Text: APT10025JLC 1000V 34A POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,	Original	APT10025JLC OT-227 APT10025JLC	PDF
u 5601 Abstract: APT10025JVFR Text: APT10025JVFR 34A 0.250Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10025JVFR OT-227 E145592 u 5601 APT10025JVFR	PDF
RY 227 tf 227 Abstract: APT10025JVR mj 1504 h48 diode SPECIFICATIONS RY 227 Text: APT10025JVR 34A 0.250Ω 1000V POWER MOS V S S Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	Original	APT10025JVR OT-227 RY 227 tf 227 APT10025JVR mj 1504 h48 diode SPECIFICATIONS RY 227	PDF
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original		PDF
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR	PDF

sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original		PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original		PDF
ZVT uc3875 Abstract: 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 UC3875 ZVT full bridge pwm controller uc3875 Bill Andreycak Text: APT9804 Ò APPLICATION NOTE By: Kenneth Dierberger Richard Redl Leo Saro High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements Presented at Intelec ‘98 San Francisco Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating	Original	APT9804 SEM-900, UC3875 U-136A. 135/D. ZVT uc3875 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 ZVT full bridge pwm controller uc3875 Bill Andreycak	PDF
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR	PDF
Untitled Abstract: No abstract text available Text: • R ADVANCED r M po w er Tec h n o lo g y APT10025JVFR 1000v 34a 0.250Q POWER MOS V‘ FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	APT10025JVFR 1000v OT-227 APT10025JVFR Con65) E145592	PDF
SOT-227 Package Abstract: No abstract text available Text: ADVANCED POW ER Te c h n o l o g y ' APT10025JVFR 1000V POWER MOS V FREDFET 34A 0.250ÍÍ 5 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ,u	OCR Scan	APT10025JVFR OT-227 MIL-STD-750 10OA/ns, SOT-227 Package	PDF
Untitled Abstract: No abstract text available Text: APT10025JVR A dvanced P o w er Te c h n o l o g y 1000V 34A 0.250Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	APT10025JVR OT-227 Dra463)	PDF
nt 6600 G Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700	OCR Scan	APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr	PDF
Untitled Abstract: No abstract text available Text: • R r M A P T 10 0 4 3 J V R ADVANCED po w er Te c h n o l o g y 1000v 22A 0.430Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	1000v OT-227 APT10043JVR E145592	PDF
10025P Abstract: No abstract text available Text: A P T 10025P V R ADVANCED PO W ER Te c h n o l o g y iooov 33A 0.250a POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	10025P APT10025PVR MIL-STD-750	PDF

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APT10025 Price and Stock

Microchip Technology Inc APT10025JVR

Microchip Technology Inc APT10025JVFR

APT10025 Datasheets (8)

APT10025 Datasheets Context Search

APT10025JVR

APT10025JVFR

Untitled

Untitled

u 5601

5809

APT10025JVFR

u 5601

APT10025JLC

APT10025JLC

u 5601

RY 227 tf 227

catalog mosfet Transistor smd

APT10026JN

sot-227 footprint

mj 1504 transistor equivalent

ZVT uc3875

APT6015LVR

Untitled

SOT-227 Package

Untitled

nt 6600 G

Untitled

10025P