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    APT10050 Price and Stock

    Microchip Technology Inc APT10050LVRG

    MOSFET N-CH 1000V 21A TO264
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    DigiKey APT10050LVRG Tube 25 1
    • 1 $23.97
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    Avnet Americas APT10050LVRG Tube 26 Weeks 25
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    Mouser Electronics APT10050LVRG 1,629
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    Verical APT10050LVRG 10 2
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    Newark APT10050LVRG Bulk 25
    • 1 $23.97
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    Microchip Technology Inc APT10050LVRG Tube 26 Weeks
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    Onlinecomponents.com APT10050LVRG
    • 1 $22.87
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    NAC APT10050LVRG Tube 16
    • 1 $22.21
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    Richardson RFPD APT10050LVRG 25
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    • 1 $22.87
    • 10 $21.01
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    Microchip Technology Inc APT10050JVFR

    MOSFET N-CH 1000V 19A ISOTOP
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    DigiKey APT10050JVFR Tube 20
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    Avnet Americas APT10050JVFR Tube 32 Weeks 20
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    Mouser Electronics APT10050JVFR
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    Newark APT10050JVFR Bulk 20
    • 1 $41.57
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    • 100 $35.9
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    Microchip Technology Inc APT10050JVFR Tube 32 Weeks
    • 1 $41.57
    • 10 $41.57
    • 100 $35.9
    • 1000 $32.94
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    Onlinecomponents.com APT10050JVFR
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    • 100 $37.06
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    TME APT10050JVFR 1
    • 1 $60.15
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    NAC APT10050JVFR Tube 9
    • 1 $38.59
    • 10 $38.59
    • 100 $35.54
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    Richardson RFPD APT10050JVFR 20
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    Master Electronics APT10050JVFR
    • 1 -
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    Microchip Technology Inc APT10050LVFRG

    MOSFET N-CH 1000V 21A TO264
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    DigiKey APT10050LVFRG Tube 25
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    Avnet Americas APT10050LVFRG Tube 32 Weeks 25
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    Mouser Electronics APT10050LVFRG 93
    • 1 $25.41
    • 10 $25.41
    • 100 $21.94
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    Verical APT10050LVFRG 19 2
    • 1 -
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    Newark APT10050LVFRG Bulk 25
    • 1 $25.41
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    • 100 $21.94
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    Microchip Technology Inc APT10050LVFRG Tube 32 Weeks
    • 1 $25.41
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    • 100 $21.94
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    Onlinecomponents.com APT10050LVFRG
    • 1 $24.26
    • 10 $23.24
    • 100 $20.37
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    TME APT10050LVFRG 19 1
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    NAC APT10050LVFRG Tube 15
    • 1 $23.57
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    EBV Elektronik APT10050LVFRG 33 Weeks 25
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    Master Electronics APT10050LVFRG
    • 1 $24.26
    • 10 $23.24
    • 100 $20.37
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    Microchip Technology Inc APT10050B2VFRG

    MOSFET N-CH 1000V 21A T-MAX
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    DigiKey APT10050B2VFRG Tube 30
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    Avnet Americas APT10050B2VFRG Tube 32 Weeks 30
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    Mouser Electronics APT10050B2VFRG 10
    • 1 $25.48
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    Newark APT10050B2VFRG Bulk 30
    • 1 $25.48
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    Microchip Technology Inc APT10050B2VFRG Tube 32 Weeks
    • 1 $25.48
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    Onlinecomponents.com APT10050B2VFRG
    • 1 $24.32
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    TME APT10050B2VFRG 1
    • 1 $47.13
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    NAC APT10050B2VFRG Tube 15
    • 1 $23.63
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    Avnet Silica APT10050B2VFRG 34 Weeks 30
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    • 1 $24.32
    • 10 $23.3
    • 100 $20.42
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    Microchip Technology Inc APT10050JN

    MOSFET MOS 4 1000 V 500 mOhm SOT-227, Projected EOL: 2044-04-30
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    Microchip Technology Inc APT10050JN 22 Weeks
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    Onlinecomponents.com APT10050JN
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    Find more APT10050 price and stock on Findchips.com

    APT10050 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10050B2LC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10050B2VFR Advanced Power Technology POWER MOS V 1000V 21A 0.500 Ohm Original PDF
    APT10050B2VFR Microsemi Power MOS V FREDFET Original PDF
    APT10050B2VFRG Microchip Technology MOSFET N-CH 1000V 21A T-MAX Original PDF
    APT10050B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10050B2VR Microsemi Power MOS V MOSFET Original PDF
    APT10050JLC Advanced Power Technology POWER MOS VI 1000V 19A 0.500 Ohm Original PDF
    APT10050JN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT10050JVFR Advanced Power Technology POWER MOS V 1000V 19A 0.500 Ohm Original PDF
    APT10050JVFR Microsemi Power MOS V FREDFET Original PDF
    APT10050JVR Microsemi Power MOS V MOSFET Original PDF
    APT10050LLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10050LVFR Advanced Power Technology POWER MOS V 1000V 21A 0.500 Ohm Original PDF
    APT10050LVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10050LVFR Microsemi Power MOS V FREDFET Original PDF
    APT10050LVFRG Microchip Technology MOSFET N-CH 1000V 21A TO264 Original PDF
    APT10050LVR Cooper Bussmann Industrial HRC Fuse Original PDF
    APT10050LVR Microsemi Power MOS V MOSFET Original PDF
    APT10050LVRG Microchip Technology MOSFET N-CH 1000V 21A TO264 Original PDF

    APT10050 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050JVR 19A 0.500Ω 1000V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050JVR OT-227 E145592 PDF

    APT10050JVFR

    Abstract: No abstract text available
    Text: APT10050JVFR 19A 0.500Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050JVFR OT-227 E145592 APT10050JVFR PDF

    APT10050B2VFR

    Abstract: APT10050LVFR
    Text: APT10050B2VFR APT10050LVFR 1000V 21A 0.500W B2VR POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050B2VFR APT10050LVFR O-264 O-264 APT10050 O-247 APT10050B2VFR APT10050LVFR PDF

    APT10050B2VR

    Abstract: No abstract text available
    Text: APT10050B2VR 21A 0.500Ω 1000V POWER MOS V T-MAX™ Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		APT10050B2VR O-247 APT10050B2VR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050JVFR 19A 0.500Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050JVFR OT-227 E145592 PDF

    APT10050JN

    Abstract: DSA0059686 10050JN N mos 100v 100A
    Text: S S D G 27 2 T- D G SO APT10050JN 1000V 20.5A 0.50Ω S ISOTOP "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.


    Original     		APT10050JN E145592 10050JN Junctio11 DSA0059686 10050JN N mos 100v 100A PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVFR 21A 0.500Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050LVFR O-264 O-264 APT10050LVFR PDF

    APT10050B2LC

    Abstract: APT10050LLC
    Text: APT10050B2LC APT10050LLC 1000V 21A 0.500W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		APT10050B2LC APT10050LLC O-264 O-264 APT10050 Drain-Sou123) O-247 APT10050LLC PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050JFLC 1000V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is


    Original     		APT10050JFLC OT-227 APT10050JF PDF

    APT10050LVFR

    Abstract: No abstract text available
    Text: APT10050LVFR 21A 0.500Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050LVFR O-264 O-264 APT10050LVFR PDF

    APT10050B2LC

    Abstract: APT10050LLC
    Text: APT10050B2LC APT10050LLC 1000V 21A 0.500W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		APT10050B2LC APT10050LLC O-264 O-264 APT10050 O-247 APT10050B2LC APT10050LLC PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050JVFR 19A 0.500Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050JVFR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT10050LVR O-264 PDF

    l0ua

    Abstract: byv06
    Text: A DV A NC ED POWER TECHNOLOGY b lE OEST'ìO'ì D 0000Û33 T74 MAVP i A d v a n ced Q P 4 1 po w er Tec h n o lo g y APT10050CFN 1000V 22.0A 0.50 £2 APT9050CFN 900V 22.0A 0.50 Q O S E Q W E FLM O S IV L N - CHANNEL ENHANCEMENT MODE HIGH, VOLTAGE POWER UOSFETS


    OCR Scan     		APT10050CFN APT9050CFN D-750 l0ua byv06 PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y APT10050JN 1000V 20.5A 0.50Í2 ISOTOP® S Ù " U L Recognized" File No. E145592 S POWER MOS IV« SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT10050JN E145592 10050JN OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVFR A dvanced P o w er Te c h n o l o g y 1000V POWER MOSV 21A 0.500Í2 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT10050LVFR O-264 APT10050LVR O-264AA PDF

    Untitled

    Abstract: No abstract text available
    Text: A d van ced APT10050B2VR po w er Te c h n o l o g y 1000V 21A 0.5000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT10050B2VR MIL-STD-750 ev050-5614 GDD2177 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVFR A D V A N CED PO W ER Te c h n o l o g y 1000V POWER MOS V 21A 0.500Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT10050LVFR O-264 APT10050LVFR PDF

    APT9050CFN

    Abstract: No abstract text available
    Text: r □BSTTO^ 0000033 T7M BiAVP blE T> ADVANCE» POWER TECHNOLOGY A D V A N C ED P O W ER T e c h n o lo g y APT10050CFN 1000V 22.0A 0.50 £i APT9050CFN 900V 22.0A 0.50 ß P O W E R M O S IV N - CHANNEL ENHANCEMENT MODE HIGH;, 1 VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		APT10Ã 50CFN APT9050CFN 03CK02S MIL-STD-750 PDF

    10050JN

    Abstract: apt10050jn
    Text: A dvanced P o w er Te c h n o lo g y APT10050JN ISO TOP* M POWER MOS IVe 1000V 20.5A 0.50Q "UL Recognized" File No. El 45592 S SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd W A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw is e sp e cifie d .


    OCR Scan     		APT10050JN 10050JN OT-227 apt10050jn PDF

    TO-264AA

    Abstract: APT10050LVR
    Text: APT10050LVR A DVAN CED P ow er Te c h n o lo g y 1000V 21A 0.500Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing der >ity and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT10050LVR O-264 APT10050LVR MIL-STD-750 O-264AA TO-264AA PDF

    APT10050LVR

    Abstract: B21 diode
    Text: APT10050LVFR A d van ced P o w er Te c h n o l o g y ' 1000V POWER MOS V FREDFET 21A 0.500Í2 I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT10050LVFR O-264 APT10050LVR 00A/ns, O-264AA B21 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: O A dvanced P ow er T e c h n o lo g y 9 D APT10050JN ° s w 1000V 20.5A 0.500 ? ISOTOP 5 M " U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol ^DSS


    OCR Scan     		E145592 10050JN CSOT-227 PDF

    diode sot 143 s5

    Abstract: No abstract text available
    Text: APT10050JVFR ADVANCED PO W ER Te c h n o l o g y 1000V POWER MOS V 19A 0.500Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT10050JVFR OT-227 E145592 diode sot 143 s5 PDF