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    APT10086 Search Results

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    APT10086 Price and Stock

    Microchip Technology Inc APT10086BVRG

    MOSFET N-CH 1000V 13A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT10086BVRG Tube 30
    • 1 -
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    • 100 $19.07
    • 1000 $19.07
    • 10000 $19.07
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    Avnet Americas APT10086BVRG Tube 26 Weeks 30
    • 1 -
    • 10 -
    • 100 $16.15597
    • 1000 $15.41316
    • 10000 $15.41316
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    Mouser Electronics APT10086BVRG 46
    • 1 $19.07
    • 10 $19.07
    • 100 $16.46
    • 1000 $16.46
    • 10000 $16.46
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    Newark APT10086BVRG Bulk 30
    • 1 $19.07
    • 10 $19.07
    • 100 $16.46
    • 1000 $15.49
    • 10000 $15.49
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    Microchip Technology Inc APT10086BVRG Tube 26 Weeks
    • 1 $19.07
    • 10 $19.07
    • 100 $16.46
    • 1000 $15.11
    • 10000 $14.6
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    Onlinecomponents.com APT10086BVRG
    • 1 $18.21
    • 10 $16.73
    • 100 $15.28
    • 1000 $14.83
    • 10000 $14.83
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    TME APT10086BVRG 1
    • 1 $27.58
    • 10 $21.93
    • 100 $21.93
    • 1000 $21.93
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    NAC APT10086BVRG Tube 20
    • 1 $17.69
    • 10 $17.69
    • 100 $16.29
    • 1000 $15.1
    • 10000 $15.1
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    Richardson RFPD APT10086BVRG 1 1
    • 1 $17.01
    • 10 $17.01
    • 100 $16.35
    • 1000 $16.35
    • 10000 $16.35
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    Master Electronics APT10086BVRG
    • 1 $18.21
    • 10 $16.73
    • 100 $15.28
    • 1000 $14.83
    • 10000 $14.83
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    Microchip Technology Inc APT10086BVFRG

    MOSFET N-CH 1000V 13A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT10086BVFRG Tube 30
    • 1 -
    • 10 -
    • 100 $20.48
    • 1000 $20.48
    • 10000 $20.48
    		Buy Now
    Avnet Americas APT10086BVFRG Tube 32 Weeks 30
    • 1 -
    • 10 -
    • 100 $17.35658
    • 1000 $16.55856
    • 10000 $16.55856
    		Buy Now
    Mouser Electronics APT10086BVFRG
    • 1 $20.48
    • 10 $20.48
    • 100 $17.69
    • 1000 $17.69
    • 10000 $17.69
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    Newark APT10086BVFRG Bulk 30
    • 1 $20.48
    • 10 $20.48
    • 100 $17.69
    • 1000 $16.63
    • 10000 $16.63
    		Buy Now
    Microchip Technology Inc APT10086BVFRG Tube 32 Weeks
    • 1 $20.48
    • 10 $20.48
    • 100 $17.69
    • 1000 $16.23
    • 10000 $15.69
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    Onlinecomponents.com APT10086BVFRG
    • 1 $19.56
    • 10 $17.97
    • 100 $16.42
    • 1000 $15.93
    • 10000 $15.93
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    TME APT10086BVFRG 1
    • 1 $29.61
    • 10 $23.55
    • 100 $23.55
    • 1000 $23.55
    • 10000 $23.55
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    NAC APT10086BVFRG Tube 18
    • 1 $19
    • 10 $19
    • 100 $17.5
    • 1000 $16.22
    • 10000 $16.22
    		Buy Now
    Master Electronics APT10086BVFRG
    • 1 $19.56
    • 10 $17.97
    • 100 $16.42
    • 1000 $15.93
    • 10000 $15.93
    		Buy Now

    APT10086 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10086BLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10086BVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10086BVFR Advanced Power Technology POWER MOS V 1000V 13A 0.860 Ohm Original PDF
    APT10086BVFR Microsemi Power MOS V FREDFET Original PDF
    APT10086BVFRG Microchip Technology MOSFET N-CH 1000V 13A TO247 Original PDF
    APT10086BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10086BVR Microsemi Power MOS V MOSFET Original PDF
    APT10086SLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10086SVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT10086 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT10086BVFR

    Abstract: No abstract text available
    Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVFR O-247 O-247 APT10086BVFR PDF

    APT10086BLC

    Abstract: APT10086SLC
    Text: APT10086BLC APT10086SLC 1000V 13A 0.860W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		APT10086BLC APT10086SLC O-247 O-247 APT10086 APT10086BLC APT10086SLC PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086BFLC 1000V POWER MOS VITM 13A 0.860W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		APT10086BFLC O-247 O-247 APT10086BFLC PDF

    APT10086BVR

    Abstract: APT10086BVFR
    Text: APT10086BVFR 13A 0.860Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVFR O-247 O-247 APT10086BVR APT10086BVR APT10086BVFR PDF

    APT10086BVR

    Abstract: No abstract text available
    Text: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVR O-247 O-247 APT10086BVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086SVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086SVR PDF

    APT10086BVFR

    Abstract: No abstract text available
    Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVFR O-247 O-247 APT10086BVFR PDF

    APT10086BVR

    Abstract: No abstract text available
    Text: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVR O-247 O-247 APT10086BVR PDF

    4440 amp

    Abstract: APT10086BVFR APT10086BVR
    Text: APT10086BVFR 13A 0.860Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVFR O-247 O-247 APT10086BVR 4440 amp APT10086BVFR APT10086BVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVFR O-247 O-247 PDF

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR PDF

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W .\A APT10086B VR pow er Te c h n o lo g y " 1000v i 3a 0.860Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®


    OCR Scan     		APT10086B 1000v O-247 APT10086BVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086BVFR A DVAN CED P ow er Te c h n o lo g y ' 1000V POWER MOS V 13A 0.860U FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		APT10086BVFR O-247 APT10086BVFR MIL-STD-750 O-247AD PDF

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr PDF

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED W .\A p o w e r Te c h n o lo g y " APT10086SVR 1000v i3a 0.860Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT10086SVR 1000v PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086BVR A dvanced po w er Te c h n o l o g y 1000V 13A 0.860£2 POWER MOS V‘ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT10086BVR O-247 APT10086BVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086BVFR A dvanced P o w er Te c h n o l o g y 1000V POWER MOS V i 13A 0.860Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		APT10086BVFR O-247 MIL-STD-750 O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086SVR A dvanced P o w er Te c h n o l o g y 1000V 13A 0.860Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		APT10086SVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086BVR A dvanced P o w er Te c h n o l o g y 1000V 13A 0.860Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		APT10086BVR O-247 MIL-STD-750 O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086SVR A dvanced po w er Te c h n o l o g y 1000V 13A 0.860Í2 POWER MOS V‘ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT10086SVR APT10086SVR PDF

    max4440

    Abstract: No abstract text available
    Text: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT10086BVFR O-247 APT10086BVR 100V16 max4440 PDF

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced POWER Te c h n o l o g y APT10086SVR iooov i3a o.86oí2 POWER MOS V Power MOS Visa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		APT10086SVR 00A/ns) MIL-STD-750 PDF