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    APT100GT60JR Search Results

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    APT100GT60JR Price and Stock

    Microchip Technology Inc APT100GT60JR

    IGBT MOD 600V 148A 500W ISOTOP
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    DigiKey APT100GT60JR Tube 30
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    Microchip Technology Inc APT100GT60JR 28 Weeks
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    Microchip Technology Inc APT100GT60JRDQ4

    IGBT MOD 600V 148A 500W ISOTOP
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    APT100GT60JR Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT100GT60JR Advanced Power Technology Thunderbolt IGBT Original PDF
    APT100GT60JR Microsemi IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 148A 500W SOT227 Original PDF
    APT100GT60JRDL Microsemi Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80; Original PDF
    APT100GT60JRDQ4 Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 60; Original PDF

    APT100GT60JR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT100GT60JR

    Abstract: No abstract text available
    Text: APT100GT60JR 600V TYPICAL PERFORMANCE CURVES APT100GT60JR E E Thunderbolt IGBT C G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT100GT60JR APT100GT60JR 80KHz E145592

    apt100gt60

    Abstract: APT10035LLL APT100DQ60 APT100GT60JRDQ4
    Text: APT100GT60JRDQ4 600V, 100A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDQ4 50KHz E145592 apt100gt60 APT10035LLL APT100DQ60 APT100GT60JRDQ4

    APT10035LLL

    Abstract: APT100GT60JRDL
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL 50KHz E145592 APT10035LLL APT100GT60JRDL

    Thunderbolt IGBT

    Abstract: APT10035LLL APT100GT60JRDL
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL 50KHz E145592 Thunderbolt IGBT APT10035LLL APT100GT60JRDL

    sgs 3525

    Abstract: SGS-Thomson 3525 THOMSON IGBT IGBT GS APT100DQ60 APT100GT60JR
    Text: APT100GT60JR 600V TYPICAL PERFORMANCE CURVES APT100GT60JR E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT100GT60JR 80KHz E145592 sgs 3525 SGS-Thomson 3525 THOMSON IGBT IGBT GS APT100DQ60 APT100GT60JR

    Untitled

    Abstract: No abstract text available
    Text: APT100GT60JR 600V TYPICAL PERFORMANCE CURVES APT100GT60JR E E Thunderbolt IGBT C G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT100GT60JR E145592 80KHz

    Untitled

    Abstract: No abstract text available
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL 50KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL E145592 50KHz

    Untitled

    Abstract: No abstract text available
    Text: APT100GT60JRDQ4 600V, 100A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDQ4 50KHz E145592 Voltag80)

    Untitled

    Abstract: No abstract text available
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL 50KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: APT100GT60JRDQ4 600V, 100A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDQ4 50KHz E145592 Curre27

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    single phase inverter IGBT

    Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
    Text: Product Solutions for Inverters in Distributed Power Markets Solar, Wind, UPS 1 Power Semiconductors for Inverters Your Inverter Requirements… Our Business • Comprehensive range of power semiconductor products to meet the needs of 500W to 500kW inverters


    Original     		PDF 500kW APT60N60BCSG 00E-07 00E-06 50E-06 single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G