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    APT1208 Search Results

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    APT1208 Price and Stock

    Microchip Technology Inc APT12080JVR

    MOSFET N-CH 1200V 15A ISOTOP
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    Microchip Technology Inc APT12080LVRG

    MOSFET N-CH 1200V 16A TO264
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    DigiKey APT12080LVRG Tube 50
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    Avnet Americas APT12080LVRG Tube 26 Weeks 30
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    Mouser Electronics APT12080LVRG
    • 1 $24.85
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    Newark APT12080LVRG Bulk 30
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    Microchip Technology Inc APT12080LVRG Tube 26 Weeks
    • 1 $24.85
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    Onlinecomponents.com APT12080LVRG
    • 1 $23.71
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    TME APT12080LVRG 1
    • 1 $35.89
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    NAC APT12080LVRG 15
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    Master Electronics APT12080LVRG
    • 1 $23.71
    • 10 $21.78
    • 100 $19.9
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    Microchip Technology Inc APT12080JVFR

    MOSFET N-CH 1200V 15A ISOTOP
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    DigiKey APT12080JVFR Tube 20
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    Avnet Americas APT12080JVFR Tube 32 Weeks 20
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    Mouser Electronics APT12080JVFR
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    Newark APT12080JVFR Bulk 20
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    Microchip Technology Inc APT12080JVFR Tube 32 Weeks
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    Onlinecomponents.com APT12080JVFR
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    TME APT12080JVFR 1
    • 1 $73.04
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    NAC APT12080JVFR Tube 7
    • 1 $46.87
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    NexGen Digital APT12080JVFR 1
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    Master Electronics APT12080JVFR
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    APT Semiconductor APT12082LNR

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    Bristol Electronics APT12082LNR 556
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    APT1208 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT12080B2VFR Microsemi Power MOS V FREDFET Original PDF
    APT12080JVFR Microsemi Power MOS V FREDFET Original PDF
    APT12080JVR Advanced Power Technology POWER MOS V 1200V 15A 0.800 Ohm Original PDF
    APT12080JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT12080JVR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1200V 15A ISOTOP Original PDF
    APT12080LVFR Microsemi Power MOS V FREDFET Original PDF
    APT12080LVR Advanced Power Technology POWER MOS V 1200V 16A 0.800 Ohm Original PDF
    APT12080LVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT1208 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT12080B2VFR APT12080LVFR O-264 APT12080B2VFR O-247 PDF

    APT12080JVR

    Abstract: APT1208
    Text: APT12080JVR 1200V 15A 0.800W POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT12080JVR OT-227 E145592 APT12080JVR APT1208 PDF

    Midcom

    Abstract: APT12080JVFR
    Text: APT12080JVFR 1200V POWER MOS V S S 27 2 T- D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT12080JVFR OT-227 E145592 Midcom APT12080JVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT12080JVFR 1200V POWER MOS V S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original
    APT12080JVFR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT12080B2VFR APT12080LVFR O-264 O-264 O-247 PDF

    APT12080LVR

    Abstract: APT1208
    Text: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original
    APT12080LVR O-264 O-264 APT12080LVR APT1208 PDF

    APT12080LVR

    Abstract: 1200v diode
    Text: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT12080LVR O-264 O-264 APT12080LVR 1200v diode PDF

    APT12080JVR

    Abstract: No abstract text available
    Text: APT12080JVR 15A 0.800Ω 1200V POWER MOS V S S Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original
    APT12080JVR OT-227 APT12080JVR PDF

    APT1208

    Abstract: APT12080B2VFR APT12080LVFR
    Text: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT12080B2VFR APT12080LVFR O-264 APT12080B2VFR O-247 APT1208 APT12080LVFR PDF

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original
    PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original
    PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT12080LVR A D V A N CED PO W ER Te c h n o l o g y 1200V 16A 0.800Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT12080LVR O-264 DAPT12080LVR PDF

    APT12082

    Abstract: APT12082LNR
    Text: A dvanced po w er Te c h n o lo g y APT12082LNR 1200V 16.0A 0.82fí POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol 'DSS All Ratings: Tc = 25°C unless otherwise specified. P a ra m e te r Drain-Source Voltage


    OCR Scan
    APT12082LNR MIL-STD-750 O-264AA APT12082 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT12080JVR A dvanced P o w er Te c h n o l o g y 1200V 15A 0.800Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    APT12080JVR OT-227 10OA/ps) MIL-STD-750 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT12080LVR A dvanced P o w er Te c h n o l o g y 1200V 16A 0.800Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    APT12080LVR O-264 O-264AA PDF

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y APT12080LVR 1200V 16A 0.800ÍÍ POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    APT12080LVR O-264 APT12080LVR MIL-STD-750 O-264AA PDF

    TH 201

    Abstract: APT12080LVR
    Text: APT12080LVR A dvanced P o w er Te c h n o l o g y 1200V 16A 0.80012 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    APT12080LVR O-264 APT12080LVR TH 201 PDF

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y A P T 12080JVR 1200V 15A 0.800Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    12080JVR OT-227 APT12080JVR MIL-STD-750 OT-227 PDF

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan
    APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr PDF

    Untitled

    Abstract: No abstract text available
    Text: • R A d van ced W /Æ P o w e r Te c h n o l o g y A P T 12080J V R 12 0 0 V is a o .s o o q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    12080J OT-227 APT12080JVR uou80) E145592 PDF