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Microsemi Corporation APT12M80S IN STOCK SHIP TODAY
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APT12M80S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT12M80S		Microsemi	Power MOSFET; Package: D3 [S]; ID (A): 13; RDS(on) (Ohms): 0.8; BVDSS (V): 800;		Original	PDF

APT12M80S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
8114 Abstract: APT12M80B APT12M80S MIC4452 Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	PDF	APT12M80B APT12M80S 8114 APT12M80B APT12M80S MIC4452
Untitled Abstract: No abstract text available Text: APT12M80B APT12M80S 800V, 13A, 0.80 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	PDF	APT12M80B APT12M80S
49e 335 Abstract: 8114 APT12M80B APT12M80S MIC4452 torque Text: APT12M80B APT12M80S 800V, 12A, 0.90Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	PDF	APT12M80B APT12M80S 49e 335 8114 APT12M80B APT12M80S MIC4452 torque
Untitled Abstract: No abstract text available Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	PDF	APT12M80B APT12M80S