APT8043BLL
Abstract: APT8043SLL
Text: APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8043BLL
APT8043SLL
O-247
O-247
unles84
APT8043BLL
APT8043SLL
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APT8052BFLL
Abstract: APT8052SFLL
Text: APT8052BFLL APT8052SFLL 800V 15A POWER MOS 7 R FREDFET 0.520Ω BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8052BFLL
APT8052SFLL
O-247
O-247
Ratin78
APT8052BFLL
APT8052SFLL
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diode IN 34A
Abstract: APT34N80B2C3 APT34N80LC3
Text: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D
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APT34N80B2C3
APT34N80LC3
O-264
O-264
APT34N80B2C3
O-247
diode IN 34A
APT34N80LC3
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Untitled
Abstract: No abstract text available
Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90BDF1
O-247
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10V11A
Abstract: No abstract text available
Text: APT17N80BC3 APT17N80SC3 0.290Ω 800V 17A Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS
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APT17N80BC3
APT17N80SC3
O-247
O-247
10V11A
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Untitled
Abstract: No abstract text available
Text: APT15GP90B TYPICAL PERFORMANCE CURVES APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90B
O-247
APT154
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APT1003RBLL
Abstract: APT1003RSLL DSA003687
Text: APT1003RBLL APT1003RSLL 1000V 4A 3.00Ω POWER MOS 7 R MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT1003RBLL
APT1003RSLL
O-247
O-247
APT1003RBLL
APT1003RSLL
DSA003687
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Untitled
Abstract: No abstract text available
Text: APT8043BFLL APT8043SFLL 20A 0.430Ω 800V POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8043BFLL
APT8043SFLL
O-247
O-247
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D-6020
Abstract: APT25GP90B T0-247
Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90B
O-247
D-6020
APT25GP90B
T0-247
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Untitled
Abstract: No abstract text available
Text: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D
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APT34N80B2C3
APT34N80LC3
O-264
O-264
O-247
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Untitled
Abstract: No abstract text available
Text: APT15GP90BDF1 TYPICAL PERFORMANCE CURVES APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90BDF1
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90BDF1
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: APT8052BFLL APT8052SFLL 0.520Ω 800V 15A POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8052BFLL
APT8052SFLL
O-247
O-247
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Untitled
Abstract: No abstract text available
Text: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 8A 1.60Ω 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ®
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APT1001R6BFLL
APT1001R6BFLL
APT1001R6SFLL
O-247
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Untitled
Abstract: No abstract text available
Text: APT10078BFLL APT10078SFLL 1000V POWER MOS 7 R FREDFET FREDFET 14A BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10078BFLL
APT10078SFLL
O-247
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D
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APT34N80B2C3
APT34N80LC3
O-264
O-264
APT34N80B2C3
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PDF
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Untitled
Abstract: No abstract text available
Text: APT8052BLL APT8052SLL 0.520Ω 800V 15A POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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Original
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APT8052BLL
APT8052SLL
O-247
O-247
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APT17N80BC3
Abstract: APT17N80SC3
Text: APT17N80BC3 APT17N80SC3 800V 17A 0.290Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS
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APT17N80BC3
APT17N80SC3
O-247
O-247
APT17N80BC3
APT17N80SC3
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PDF
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APT10078BFLL
Abstract: APT10078SFLL
Text: APT10078BFLL APT10078SFLL 1000V POWER MOS 7 R 14A 0.780Ω FREDFET FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10078BFLL
APT10078SFLL
O-264
O-247
APT10078BFLL
APT10078SFLL
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PDF
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APT15GP90B
Abstract: T0-247
Text: APT15GP90B TYPICAL PERFORMANCE CURVES APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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Original
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APT15GP90B
O-247
APT15GP90B
T0-247
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APT8043BFLL
Abstract: APT8043SFLL
Text: APT8043BFLL APT8043SFLL 800V POWER MOS 7 R FREDFET 20A 0.430Ω BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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Original
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APT8043BFLL
APT8043SFLL
O-247
O-247
Ratin78
APT8043BFLL
APT8043SFLL
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PDF
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APT15GP90BDF1
Abstract: IGBT 900v 60a
Text: APT15GP90BDF1 TYPICAL PERFORMANCE CURVES APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90BDF1
O-247
APT15GP90BDF1
IGBT 900v 60a
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PF355
Abstract: APT31N80JC3 APT15DF100
Text: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package
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APT31N80JC3
OT-227
APT31N80JC3
PF355
APT15DF100
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Untitled
Abstract: No abstract text available
Text: APT34N80B2C3 G APT34N80LC3(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated
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APT34N80B2C3
APT34N80LC3
O-264
O-264
O-247
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