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    APT30GT60AR Search Results

    APT30GT60AR Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30GT60AR Advanced Power Technology Thunderbolt IGBT Original PDF

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    Catalog Datasheet MFG & Type Document Tags PDF

    APT30GT60AR

    Abstract: No abstract text available
    Text: APT30GT60AR 600V 40A Thunderbolt IGBT™ TO-3 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		APT30GT60AR 150KHz O-204AE) 66VCES MIL-STD-750 APT30GT60AR PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR PDF

    600V1200V

    Abstract: No abstract text available
    Text: PRODUCTS - IGBTs IGBT Technology . Non-Punch-Through IGBTs are manufactured by fabricating the MOSFET structure on the surface of a lightly doped, n-substrate. APT’s construction provides the optimal tradeoff between VCE SAT , switching speed, and ruggedness.


    Original     		40kHZ 150kHZ 300kHZ 00V-1200V, 0A-50A O-254, O-258, APT20GT60AR APT30GT60AR APT50GF60AR 600V1200V PDF