APT43GA90S Search Results

APT43GA90S Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT43GA90S		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43;		Original	PDF
APT43GA90SD30		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43;		Original	PDF

APT43GA90S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT43GA90B APT43GA90S	PDF
diode schottky 600v Abstract: No abstract text available Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT43GA90BD30 APT43GA90SD30 diode schottky 600v	PDF
Untitled Abstract: No abstract text available Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT43GA90B APT43GA90S Ver81	PDF
Untitled Abstract: No abstract text available Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT43GA90BD30 APT43GA90SD30 TYP11	PDF
RECTIFIER DIODE 1000A schottky Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30 Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT43GA90BD30 APT43GA90SD30 TYPI67 RECTIFIER DIODE 1000A schottky Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30	PDF
APT43GA90B Abstract: APT43GA90S MIC4452 117 IC 100-C43 Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT43GA90B APT43GA90S APT43GA90B APT43GA90S MIC4452 117 IC 100-C43	PDF