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    APT45G Price and Stock

    Microchip Technology Inc APT45GP120JDQ2

    IGBT MOD 1200V 75A 329W ISOTOP
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    Microchip Technology Inc APT45GP120B2DQ2G

    IGBT PT 1200V 113A
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    Microchip Technology Inc APT45GR65B

    IGBT NPT 650V 92A TO247
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    DigiKey APT45GR65B Tube 120
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    Microchip Technology Inc APT45GP120J

    IGBT MOD 1200V 75A 329W ISOTOP
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    DigiKey APT45GP120J Tube 20
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    Microchip Technology Inc APT45GP120BG

    IGBT PT 1200V 100A TO247
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    DigiKey APT45GP120BG Tube 30
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    APT45G Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT45G100BN Advanced Power Technology Power MOS IV IGBT Scan PDF
    APT45GF60BN Advanced Power Technology Power MOS IV IGBT Scan PDF
    APT45GL100BN Advanced Power Technology N-Channel IGBT, 1000V, 45A Scan PDF
    APT45GP120B Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT45GP120B2DF2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT45GP120B2DF2 Unknown High Voltage, 1200V 100A, IGBT N-Type Original PDF
    APT45GP120B2DQ2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT45GP120B2DQ2G Advanced Power Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 113A 625W TMAX Original PDF
    APT45GP120B2DQ2G Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT45GP120B2DQ2G Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 113A 625W TMAX Original PDF
    APT45GP120BG Advanced Power Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 100A 625W TO247 Original PDF
    APT45GP120BG Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 100A 625W TO247 Original PDF
    APT45GP120J Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 1200V 75A 329W SOT227 Original PDF
    APT45GP120J Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT45GP120J Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 1200V 75A 329W SOT227 Original PDF
    APT45GP120JDF2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT45GP120JDF2 Unknown High Voltage, 1200V 75A, IGBT N-Type Original PDF
    APT45GP120JDQ2 Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 1200V 75A 329W SOT227 Original PDF
    APT45GP120JDQ2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT45GP120JDQ2 Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 1200V 75A 329W SOT227 Original PDF

    APT45G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and


    Original
    APT45GR65BSCD10 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GR65B APT45GR65B 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses.


    Original
    APT45GR65B PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120B2DF2 APT45GP120B2DF2age PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120B O-247 APT45GP120B T0-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original
    APT45GP120B2DQ2 APT45GP120B2DQ2 APT45GP120B2DQ2G* PDF

    IC 7431 datasheet

    Abstract: 185F APT45GP120B2DF2 800V16A
    Text: APT45GP120B2DF2 APT45GP120B2DF2 TYPICAL PERFORMANCE CURVES 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120B2DF2 IC 7431 datasheet 185F APT45GP120B2DF2 800V16A PDF

    225A2

    Abstract: No abstract text available
    Text: APT45GP120J 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120J APT45GP1) 225A2 PDF

    3000 0442

    Abstract: 7433 APT10035LLL APT45GP120B2DQ2 APT45GP120B2DQ2G
    Text: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original
    APT45GP120B2DQ2 APT45GP120B2DQ2 APT45GP120B2DQ2G* 3000 0442 7433 APT10035LLL APT45GP120B2DQ2G PDF

    APT45GP120B

    Abstract: T0-247
    Text: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120B O-247 APT45GP120B T0-247 PDF

    APT45G

    Abstract: No abstract text available
    Text: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120B O-247 APT45GP120B T0-247 APT45G PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GP120J 1200V The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.


    Original
    APT45GP120J APT45GP120J PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120B2DF2 APT45GP120B2DF2age PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GP120J 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120J APT45GP1 PDF

    IC 7432

    Abstract: Datasheet of IC 7432 data sheet IC 7432 IC 7432 DATASHEET 7432 7432 ic 78 MOS 7432 or gate ic IC 7432 DATASHEETS or ic 7432
    Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120JDF2 IC 7432 Datasheet of IC 7432 data sheet IC 7432 IC 7432 DATASHEET 7432 7432 ic 78 MOS 7432 or gate ic IC 7432 DATASHEETS or ic 7432 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)45 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case625m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.


    Original
    APT45GL100BN Junc-Case625m delay40n time130n time675n PDF

    UJ 45A diode

    Abstract: No abstract text available
    Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    APT45GP120JDF2 APT45 UJ 45A diode PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GR65B_SSCD10 APT45GR65BSCD10 APT45GR65SSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and


    Original
    SSCD10 APT45GR65BSCD10 APT45GR65SSCD10 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original
    APT45GP120JDQ2 E145592 PDF

    transistor GC cd

    Abstract: No abstract text available
    Text: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol


    OCR Scan
    APT45GL100BN transistor GC cd PDF

    APT45GL100BN

    Abstract: 10A fast Gate Turn-off Thyristor
    Text: A D V A NC ED POWER TECHNOLOGY b lE OZSTSCm D OOOOèbb 310 HAVP A D V A N C ED PO W ER Te c h n o l o g y • APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol


    OCR Scan
    APT45GL100BN 10A fast Gate Turn-off Thyristor PDF

    APT45G100BN

    Abstract: i287
    Text: ADVANCED POUER TECHNOLOGY blE D • GSST'lD'l GOGGfl'î'î flb? ■ AVP ADVANCED PO W ER Te c h n o l o g y APT45G100BN P O W E R M O S 1000V 45A IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS


    OCR Scan
    APT45G100BN APT45G100BN i287 PDF

    APT45G100BN

    Abstract: No abstract text available
    Text: ADVANCED POIdER T E C H N O L O G Y bl E □ 2 5 7 ^ 0*1 OOOOfl'i'ï flb? D A d van ced po w er Tec h n o lo g y * APT45G100BN 1000V 45A POWER MOS IV IGBT N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS


    OCR Scan
    APT45G100BN O-247AD PDF

    APT POWER FET

    Abstract: APT110GF60JN APT65GL100BN APT25GF100BN APT30GF60BN APT45GL100BN IGBT SCHEMATIC IGBT 1500 volts APT35GL60BN IGBT 1000 VOLTS TO 1500 VOLTS
    Text: APT IGBT PRODUCTS BVces V ce ON lc,(25C ) lC2(90°C) tf(IND@125 C) Pd APT New Product Volts Volts Amps Amps nsec Watts Part No. Comments LOW CONDUCTION LOSS IGBT PRODUCT FAMILY 1000 2.8 3.0 3.0 65 45 30 35 25 17 1500 1500 1500 260 200 147 APT65GL100BN APT45GL100BN


    OCR Scan
    APT65GL100BN APT45GL100BN APT30GL100BN APT75GL60BN APT50GL60BN APT35GL60BN APT50GF100BN APT40GF100BN APT25GF100BN APT55GF60BN APT POWER FET APT110GF60JN APT25GF100BN APT30GF60BN IGBT SCHEMATIC IGBT 1500 volts IGBT 1000 VOLTS TO 1500 VOLTS PDF

    1SV80

    Abstract: APT45GF60BN Thyristor BT 102 A 03e 000D t71 thyristor
    Text: ADVANCED POI dER TECHNOLOGY b lE 025710^ 0000070 032 « A V P D A d van ced PO W ER Te c h n o l o g y " APT45GF60BN 600V 45 A POWER MOS IV 1GBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT45GF60BN APT45GF60BN 125-c 1SV80 Thyristor BT 102 A 03e 000D t71 thyristor PDF