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    APT5024 Price and Stock

    Microchip Technology Inc APT5024BLLG

    MOSFET N-CH 500V 22A TO247
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    Mouser Electronics APT5024BLLG
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    Microchip Technology Inc APT5024BLLG Tube 26 Weeks
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    Onlinecomponents.com APT5024BLLG
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    TME APT5024BLLG 1
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    NAC APT5024BLLG Tube 46
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    Microchip Technology Inc APT5024SLLG

    MOSFET N-CH 500V 22A D3PAK
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    DigiKey APT5024SLLG Tube 60
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    Avnet Americas APT5024SLLG Reel 26 Weeks 400
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    APT5024SLLG Tube 26 Weeks 60
    • 1 $9.1238
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    Mouser Electronics APT5024SLLG
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    Microchip Technology Inc APT5024SLLG Tube 26 Weeks
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    Onlinecomponents.com APT5024SLLG
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    TME APT5024SLLG 1
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    NAC APT5024SLLG Tube 41
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    Master Electronics APT5024SLLG
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    Microchip Technology Inc APT5024BFLLG

    MOSFET N-CH 500V 22A TO247
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    DigiKey APT5024BFLLG Tube 70
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    Avnet Americas APT5024BFLLG Tube 32 Weeks 70
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    Mouser Electronics APT5024BFLLG
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    Newark APT5024BFLLG Bulk 70
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    Microchip Technology Inc APT5024BFLLG Tube 32 Weeks
    • 1 $8.42
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    Onlinecomponents.com APT5024BFLLG
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    TME APT5024BFLLG 1
    • 1 $12.18
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    NAC APT5024BFLLG Tube 45
    • 1 $8.04
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    Richardson RFPD APT5024BFLLG 70
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    Master Electronics APT5024BFLLG
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    Microchip Technology Inc APT5024SLLG-TR

    MOSFET N-CH 500V 22A D3PAK
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    DigiKey APT5024SLLG-TR Cut Tape 1
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    APT5024SLLG-TR Digi-Reel 1
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    APT5024SLLG-TR Reel 400
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    Microchip Technology Inc APT5024BVFRG

    Transistor MOSFET N-Channel 500V 22A 3-Pin TO-247 - Rail/Tube (Alt: APT5024BVFRG)
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    Avnet Americas APT5024BVFRG Tube 32 Weeks 16
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    Mouser Electronics APT5024BVFRG
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    Newark APT5024BVFRG Bulk 30
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    TME APT5024BVFRG 1
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    NAC APT5024BVFRG 15
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    APT5024 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5024AVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5024AVR Advanced Power Technology POWER MOS V 500V 18.5A 0.240 Ohm Original PDF
    APT5024BFLL Advanced Power Technology POWER MOS 7 500V 22A 0.240 Ohm Original PDF
    APT5024BFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5024BFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5024BFLL Unknown Power MOS 7, 500V 22A, MOS-FET N-Channel enhanced Original PDF
    APT5024BFLLG Microchip Technology MOSFET N-CH 500V 22A TO247 Original PDF
    APT5024BLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT5024BLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5024BLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT5024BLLG Microsemi Power MOSFET; Package: TO-247 [B]; ID (A): 22; RDS(on) (Ohms): 0.24; BVDSS (V): 500; Original PDF
    APT5024BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5024BVFR Microsemi Power MOS V FREDFET Original PDF
    APT5024BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5024BVR Unknown Power MOS V, 500V 22A, MOS-FET N-Channel enhanced Original PDF
    APT5024SFLL Advanced Power Technology POWER MOS 7 500V 22A 0.240 Ohm Original PDF
    APT5024SFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5024SFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5024SFLL Unknown Power MOS 7, 500V 22A, MOS-FET N-Channel enhanced Original PDF
    APT5024SLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF

    APT5024 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVFR 500V POWER MOS V 22A 0.240Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT5024BVFR O-247 O-247 APT5024BVR PDF

    APT5024BFLL

    Abstract: APT5024SFLL
    Text: APT5024BFLL APT5024SFLL 500V 22A 0.240Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5024BFLL APT5024SFLL O-247 O-247 APT5024BFLL APT5024SFLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BLL APT5024SLL 500V 22A 0.240Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5024BLL APT5024SLL O-247 O-247 PDF

    APT5024BLL

    Abstract: APT5024SLL
    Text: APT5024BLL APT5024SLL 500V 22A 0.240Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5024BLL APT5024SLL O-247 O-247 APT5024BLL APT5024SLL PDF

    APT5024BVFR

    Abstract: APT5024SVFR
    Text: APT5024BVFR APT5024SVFR 500V POWER MOS V FREDFET 22A 0.240Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT5024BVFR APT5024SVFR O-247 O-247 APT5024BVFR APT5024SVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BLL G APT5024SLL(G) 500V 22A 0.240Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original
    APT5024BLL APT5024SLL O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVFR APT5024SVFR 500V POWER MOS V FREDFET 22A 0.240Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT5024BVFR APT5024SVFR O-247 O-247 APT50 PDF

    APT5024BFLL

    Abstract: APT5024SFLL
    Text: APT5024BFLL APT5024SFLL 500V 22A 0.240W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    APT5024BFLL APT5024SFLL O-247 O-247 APT5024BFLL APT5024SFLL PDF

    APT5024BFLL

    Abstract: APT5024SFLL
    Text: APT5024BFLL APT5024SFLL 500V 22A 0.240Ω POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT5024BFLL APT5024SFLL O-247 O-247 APT5024BFLL APT5024SFLL PDF

    88 diode

    Abstract: APT5024BVR
    Text: APT5024BVR 500V 22A 0.240Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original
    APT5024BVR O-247 O-247 88 diode APT5024BVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024AVR 500V 18.5A 0.240W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT5024AVR O-204AE) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BFLL APT5024SFLL 500V 22A 0.240 POWER MOS 7 R FREDFET BFLL B Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering


    Original
    APT5024BFLL APT5024SFLL O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BLL APT5024SLL 500V 22A 0.240W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    APT5024BLL APT5024SLL O-247 O-247 PDF

    APT5024BFLL

    Abstract: APT5024SFLL
    Text: APT5024BFLL APT5024SFLL 500V 22A 0.240Ω POWER MOS 7 R FREDFET BFLL B Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering


    Original
    APT5024BFLL APT5024SFLL O-247 APT5024BFLL APT5024SFLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BLL APT5024SLL 500V 22A 0.240W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    APT5024BLL APT5024SLL O-247 O-247 PDF

    APT5024BVR

    Abstract: APT5024SVR
    Text: APT5024BVR APT5024SVR 500V POWER MOS V 22A 0.240Ω BVR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT5024BVR APT5024SVR O-247 O-247 APT5024BVR APT5024SVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVFR APT5024SVFR 22A 0.240Ω 500V POWER MOS V BVFR FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT5024BVFR APT5024SVFR O-247 O-247 APT5024BVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT5024BVR O-247 O-247AD PDF

    MJ1210

    Abstract: No abstract text available
    Text: APT5024AVR • R A dvanced W .\A pow er Te c h n o lo g y " soov i8 .s a 0.240q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT5024AVR APT5024AVR IL-STD-750 MJ1210 PDF

    c2802

    Abstract: AS1210
    Text: APT5024BVR A dvan ced P o w er Te c h n o l o g y 500v 22A 0.240a POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT5024BVR O-247 00A/fis) O-247AD c2802 AS1210 PDF

    apt5024bvfr

    Abstract: No abstract text available
    Text: APT5024BVFR A dvanced P o w er Te c h n o l o g y ' 500V 22A 0.240ÍÍ POWER MOS V FREDFET Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT5024BVFR O-247 APT5024BVFR 00A/MS) MIL-STD-750 O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVFR A dvanced P o w er Te c h n o l o g y 500V POWER MOS V i 22A 0.240Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT5024BVFR O-247 MIL-STD-750 O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W .\A APT5024BVFR pow er Te c h n o l o g y “ soov POWER MOS V‘ 0.240q 22A FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT5024BVFR O-247 APT5024BVR PDF

    660 tg diode

    Abstract: No abstract text available
    Text: APT5024BVFR ADVANCED POW ER Te c h n o l o g y POWER MOSV 500V 22A 0.2400 FREDFET Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT5024BVFR O-247 APT5024BVR 660 tg diode PDF