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Microchip Technology Inc APT6030BN MOSFET N-CH 600V 23A TO247AD
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DigiKey	APT6030BN	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APT6030BVRG MOSFET N-CH 600V 21A TO247
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DigiKey	APT6030BVRG	Tube			50	1 - 10 - 100 $12.52 1000 $12.52 10000 $12.52	Buy Now
Avnet Americas	APT6030BVRG	Tube		26 Weeks	50	1 - 10 - 100 $10.0744 1000 $10.10944 10000 $10.10944	Buy Now
Mouser Electronics	APT6030BVRG		202			1 $12.52 10 $12.52 100 $10.8 1000 $10.8 10000 $10.8	Buy Now
Arrow Electronics	APT6030BVRG		10	26 Weeks	1	1 $11.135 10 $11.135 100 $11.135 1000 $10.417 10000 $10.417	Buy Now
Newark	APT6030BVRG	Bulk			50	1 $12.52 10 $12.52 100 $10.8 1000 $10.15 10000 $10.15	Buy Now

Microchip Technology Inc	APT6030BVRG	Tube		26 Weeks		1 $12.52 10 $12.52 100 $10.8 1000 $9.91 10000 $9.59	Buy Now
Onlinecomponents.com	APT6030BVRG					1 - 10 $12.12 100 $10.28 1000 $9.73 10000 $9.73	Buy Now
TME	APT6030BVRG				1	1 $18.17 10 $14.38 100 $14.38 1000 $14.38 10000 $14.38	Get Quote
NAC	APT6030BVRG	Tube			30	1 $11.94 10 $11.94 100 $10.83 1000 $9.9 10000 $9.9	Buy Now
NexGen Digital	APT6030BVRG		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	APT6030BVRG					1 - 10 $12.12 100 $10.28 1000 $9.73 10000 $9.73	Buy Now
APT Semiconductor APT6030BVR
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Bristol Electronics	APT6030BVR		532			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Advanced Power Technology APT6030BN
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Bristol Electronics	APT6030BN		15			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Advanced Power Technology APT6030BVR TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,21A I(D),TO-247AD
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Quest Components	APT6030BVR		425			1 $16.425 10 $16.425 100 $16.425 1000 $10.95 10000 $10.95	Buy Now

APT6030 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
APT6030	Advanced Power Technology	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	Original	PDF
APT6030	Advanced Power Technology	TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,23A I(D),TO-247AD	Scan	PDF
APT6030BN	Advanced Power Technology	N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT6030BN	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 23A TO247AD	Original	PDF
APT6030BN	Advanced Power Technology	N-Channel Enhancement Mode High Voltage Power MOSFET	Scan	PDF
APT6030BNR	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF
APT6030BVFR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT6030BVFR	Microsemi	Power MOS V FREDFET	Original	PDF
APT6030BVFR	Unknown	Power MOS V, 600V 21A, MOS-FET N-Channel enhanced	Original	PDF
APT6030BVR	Advanced Power Technology	N-Channel enhancement mode power MOSFET	Original	PDF
APT6030BVR	Microsemi	Power MOS V MOSFET	Original	PDF
APT6030BVRG	Microchip Technology	MOSFET N-CH 600V 21A TO247	Original	PDF
APT6030DN	Advanced Power Technology	APT Power MOS IV Commercial and Custom DIE	Scan	PDF
APT6030SN	Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	Original	PDF

APT6030SVFR	Microsemi	Power MOS V FREDFET	Original	PDF
APT6030SVFR	Unknown	Power MOS V, 600V 21A, MOS-FET N-Channel enhanced	Original	PDF
APT6030SVR	Microsemi	Power MOS V MOSFET	Original	PDF

APT6030 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT6030BVFR O-247 O-247	PDF
APT6030BVFR Abstract: APT6030SVFR Text: APT6030BVFR APT6030SVFR 600V 21A POWER MOS V FREDFET 0.300Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT6030BVFR APT6030SVFR O-247 O-247 APT6030BVFR APT6030SVFR	PDF
Untitled Abstract: No abstract text available Text: APT6030BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)92 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)360 Minimum Operating Temp (øC)-55õ	Original	APT6030BN Junc-Case340m	PDF
Untitled Abstract: No abstract text available Text: APT6030BVR APT6030SVR 600V 21A POWER MOS V MOSFET BVR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT6030BVR APT6030SVR O-247 O-247 APT6030BVR	PDF
Untitled Abstract: No abstract text available Text: APT6030BVR APT6030SVR 600V 21A POWER MOS V MOSFET BVR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT6030BVR APT6030SVR O-247 O-247 APT6030BVR	PDF
APT6030SN Abstract: No abstract text available Text: D D3PAK G APT6030SN S 600V 23.0A 0.30Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT6030SN UNIT 600 Volts 23 Continuous Drain Current @ TC = 25°C	Original	APT6030SN APT6030SN	PDF
Untitled Abstract: No abstract text available Text: APT6030BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)	Original	APT6030BNR	PDF
Untitled Abstract: No abstract text available Text: APT6030BVFR APT6030SVFR 600V 21A POWER MOS V FREDFET 0.300Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT6030BVFR APT6030SVFR O-247 O-247 APT6030BVFR	PDF
Untitled Abstract: No abstract text available Text: APT6030BVR 600V 21A 0.300Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.	Original	APT6030BVR O-247 O-247	PDF
6030bn Abstract: APT6030BN APT6033BN Text: D TO-247 G S POWER MOS IV APT6030BN 600V 23.0A 0.30Ω APT6033BN 600V 22.0A 0.33Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage	Original	O-247 APT6030BN APT6033BN 6030BN 6033BN O-247AD 6030bn	PDF
Untitled Abstract: No abstract text available Text: A d v a n ced P o w er Te c h n o l o g y ' APT6030BVR 600V 21A 0.300Í2 POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	APT6030BVR O-247 APT6030BVR 00A/fis) O-247AD	PDF
Untitled Abstract: No abstract text available Text: • R ADVANCED W ZA P o w er Te c h n o lo g y APT6030BNR APT6033BNR GFvvER MOS l'Tiä 600V 23.0A 0.30i> 600V 22.0A 0.3312 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT6030BNR APT6033BNR APT6033BNR APT6030/6033BNR O-247AD	PDF
DLS FT 031 Abstract: TL 084L APT6030BNR 25CC APT6033BNR Text: A d van ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR Ô S POWER MOS IV® 600V 23.0A 0.30U 600V 22.0A 0.33Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.	OCR Scan	APT6030BNR APT6033BNR APT603Q/6033BNR O-247AD 0001S1S DLS FT 031 TL 084L 25CC	PDF
APT6030BNR Abstract: No abstract text available Text: A d va n ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR O s 600V 23.0A 0.3012 600V 22.0A 0.33Ü POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V OSS D Continuous Drain Current @ Tc V V Parameter	OCR Scan	APT6030BNR APT6033BNR APT6033BNR MIL-STD-750 O-247AD	PDF

diode U3d Abstract: LM 7801 6030BNR diode U3d on DLS FT 031 APT6030BNR APT6033BNR 040 U3D u3d diode Text: O D O S ADVANCED PO W ER Te c h n o l o g y APT6030BNR APT6033BNR POWER MOS IVe 600V 23.0A 0.30Í2 600V 22.0A 0.33Í2 AVALANCHE RATED N-C HA N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol All Ratings: T c = 2 5 °C unless otherwise specified.	OCR Scan	APT6030BNR APT6033BNR O-247AD diode U3d LM 7801 6030BNR diode U3d on DLS FT 031 040 U3D u3d diode	PDF
APT802R4KN Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b Text: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN	OCR Scan	APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5040BN APT802R4KN APT6018LNR APT6060BN mosfet selector guide APT-6018 APT10M25bnfr k 3530 MOSFET 1r3b	PDF
D 92 M - 03 DIODE Abstract: 6030bn Text: A dvanced P ow er Te c h n o l o g y O D O APT6030BN 600V 23.0A 0.30CÌ APT6033BN 600V 22.0A 0.33ÍÍ S _ ^ _ GB WER MOS \V® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN	OCR Scan	APT6030BN APT6033BN 6030BN 6033BN APT6030/6033BN O-247AD D 92 M - 03 DIODE	PDF
lr 2905 z Abstract: 1S17 APT6030SN Text: o A dvanced P o w er Te c h n o lo g y D APT6030SN O s 600V 23.0A 0.30Í2 POWER MOS IV« N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ' dm > CO O V GSM PD T J ’T STG tl All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT6030SN 000151e] lr 2905 z 1S17	PDF
6030BN Abstract: 6033BN lr 2905 z DLS FT 031 APT6030BN APT6033BN Text: A d v a n ced P o w er Te c h n o l o g y * O D O S POWER MOS IV APT6030BN 600V 23.0A 0.300 APT6033BN 600V 22.0A 0.33Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT	OCR Scan	APT6030BN APT6033BN 6030BN 6033BN Numb12, O-247AD lr 2905 z DLS FT 031	PDF
Untitled Abstract: No abstract text available Text: A d v a n ced P o w er Te c h n o l o g y 8 O D O S POWER MOS IV APT6030BN 600V 23.0A 0.30Q APT6033BN 600V 22.0A 0.330 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT	OCR Scan	APT6030BN APT6033BN 6030BN 6033BN O-247AD APT6030/6033BN	PDF
APT6030BVR Abstract: No abstract text available Text: APT6030BVR • R A dvanced W .\A pow er Te c h n o lo g y " 600v 21 a 0.300Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	APT6030BVR O-247 APT6030BVR	PDF
Untitled Abstract: No abstract text available Text: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT6030BN 600V 23.0A 0.30Í1 APT6033BN 600V 22.0A 0.33Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT	OCR Scan	APT6030BN APT6033BN 6030BN 6033BN APT6030/6033BN O-247AD	PDF
Untitled Abstract: No abstract text available Text: APT6030BVR A dvanced P o w er Te c h n o l o g y 600V 21A 0.300Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	APT6030BVR O-247 MIL-STD-750 O-247AD	PDF
ISOTOP Abstract: HU49 Text: A d v an ced P o w er Te c h n o lo g y OD o J t t I S/D APT6030HJN o \|^ 23.0A 0.30D 5 Û ”UL Recognized" File No. E145592 S ISOTOP OS 600V POWER MOS IV‘ HALF-BRIDGE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS	OCR Scan	APT6030HJN E145592 6030HJN OT-227 ISOTOP HU49	PDF

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APT6030 Datasheets (17)

APT6030 Datasheets Context Search

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APT6030BVFR

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APT6030SN

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6030bn

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DLS FT 031

APT6030BNR

diode U3d

APT802R4KN

D 92 M - 03 DIODE

lr 2905 z

6030BN

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APT6030BVR

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ISOTOP