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Microchip Technology Inc APT6040BN MOSFET N-CH 600V 18A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT6040BN	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APT6040BNG MOSFET N-CH 600V 18A TO247AD
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DigiKey	APT6040BNG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Richardson RFPD	APT6040BNG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc APT6040BVFRG Transistor MOSFET N-Channel 600V 15A 3-Pin TO-247 - Rail/Tube (Alt: APT6040BVFRG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	APT6040BVFRG	Tube		32 Weeks	17	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	APT6040BVFRG					1 $23.9 10 $23.9 100 $20.64 1000 $20.64 10000 $20.64	Get Quote
Newark	APT6040BVFRG	Bulk			30	1 $23.9 10 $23.9 100 $20.64 1000 $19.4 10000 $19.4	Buy Now
TME	APT6040BVFRG				1	1 $34.57 10 $27.49 100 $27.49 1000 $27.49 10000 $27.49	Get Quote
NAC	APT6040BVFRG	Tube			16	1 $22.17 10 $22.17 100 $20.42 1000 $18.93 10000 $18.93	Buy Now
Microchip Technology Inc APT6040BVRG Transistor MOSFET N-Channel 600V 15A 3-Pin TO-247 - Rail/Tube (Alt: APT6040BVRG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	APT6040BVRG	Tube		26 Weeks	4	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	APT6040BVRG					1 $108.23 10 $108.23 100 $108.23 1000 $108.23 10000 $108.23	Get Quote
Newark	APT6040BVRG	Bulk			10	1 $108.23 10 $108.23 100 $93.48 1000 $87.84 10000 $87.84	Buy Now
TME	APT6040BVRG				1	1 $157.2 10 $123.67 100 $123.67 1000 $123.67 10000 $123.67	Get Quote
NAC	APT6040BVRG	Tube			3	1 $100.4 10 $100.4 100 $92.47 1000 $85.71 10000 $85.71	Buy Now
Microchip Technology Inc APT6040HN Mosfet _ CUSTOM, Projected EOL: 2049-02-05
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	APT6040HN			52 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now

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APT6040 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
APT6040	Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	Original	PDF
APT6040AN	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF
APT6040BN	Advanced Power Technology	N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT6040BN	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 18A TO247AD	Original	PDF
APT6040BNG	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 18A TO247AD	Original	PDF
APT6040BVFR	Advanced Power Technology	POWER MOS V FREDFET	Original	PDF
APT6040BVFR	Unknown	Power MOS V, 600V 16A, MOS-FET N-Channel enhanced	Original	PDF
APT6040BVFRG	Advanced Power Technology	POWER MOS V FREDFET	Original	PDF
APT6040BVR	Microsemi	Power MOS V MOSFET	Original	PDF
APT6040DN	Advanced Power Technology	APT Power MOS IV Commercial and Custom DIE	Scan	PDF
APT6040SVFR	Advanced Power Technology	POWER MOS V FREDFET	Original	PDF
APT6040SVFR	Unknown	Power MOS V, 600V 16A, MOS-FET N-Channel enhanced	Original	PDF
APT6040SVFRG	Advanced Power Technology	POWER MOS V FREDFET	Original	PDF
APT6040SVR	Microsemi	Power MOS V MOSFET	Original	PDF

APT6040 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: APT6040BVR APT6040SVR 600V 16A 0.400Ω Ω BVR POWER MOS V D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT6040BVR APT6040SVR O-247 O-247	PDF
Untitled Abstract: No abstract text available Text: APT6040BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)	Original	APT6040BN	PDF
6040BN Abstract: APT6040BN APT6045BN 6045bn Text: D TO-247 G S POWER MOS IV APT6040BN 600V 18.0A 0.40Ω APT6045BN 600V 17.0A 0.45Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage	Original	O-247 APT6040BN APT6045BN 6040BN 6045BN O-247AD 6040BN 6045bn	PDF
Untitled Abstract: No abstract text available Text: APT6040BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)19 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)	Original	APT6040BNR	PDF
Untitled Abstract: No abstract text available Text: APT6040BVFR APT6040SVFR APT6040BVFRG APT6040SVFRG 600V 15A 0.45 Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V FREDFET BVFR TO -2 47 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS	Original	APT6040BVFR APT6040SVFR APT6040BVFRG APT6040SVFRG O-247	PDF
Untitled Abstract: No abstract text available Text: APT6040BVR APT6040SVR 600V 15A POWER MOS V 0.45Ω BVR TO -2 47 D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS	Original	APT6040BVR APT6040SVR O-247	PDF
Untitled Abstract: No abstract text available Text: 600V 16A APT6040BVFR Ω 0.40Ω APT6040SVFR APT6040BVFRGAPT6040SVFRG *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V FREDFET BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,	Original	APT6040BVFR APT6040SVFR APT6040BVFRG APT6040SVFRG* O-247 O-247 APT6040B	PDF
APT6040BVFR Abstract: APT6040SVFR Text: APT6040BVFR APT6040SVFR 600V 16A POWER MOS V FREDFET 0.400Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT6040BVFR APT6040SVFR O-247 O-247 APT6040BVFR APT6040SVFR	PDF
Untitled Abstract: No abstract text available Text: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN	OCR Scan	APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN	PDF
Untitled Abstract: No abstract text available Text: APT6040BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 6oov i6 a o.4oon POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	APT6040BVR O-247 MIL-STD-750 O-247AD	PDF
5540a Abstract: No abstract text available Text: ADVANCED POWER TECHNOLOGY H'IE D • QSST'lQ'l 0000472 TRO « A V P A dvanced P o w e r ■t-3°i-i5 Te c h n o l o g y APT6040AN 600V 15.5A 0.40 £2 APT5540AN 550V 15.5A 0.40 £2 APT6045AN 600V 14.5A 0.45 ß APT5545AN550V 14.5A 0.45 POWER MOS IV _	OCR Scan	APT6040AN APT5540AN APT6045AN APT5545AN550V -APT6040/6045AN APT5540/5545AN 5540a	PDF
6040BN Abstract: apt6040bn APT5540BN mc 668 L Text: O A d v a n ced P o w er Te c h n o l o g y D APT6040BN APT5540BN APT6045BN APT5545BN Ô S ÜB WER MOS IV55 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40U 0.400 0.451] 0.45!. 2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.	OCR Scan	APT6040BN APT5540BN APT6045BN APT5545BN 5540BN 6040BN 5545BN 6045BN CHARACTERISTICS040/5540/6045/5545BN O-247AD mc 668 L	PDF
APT6040BNR Abstract: No abstract text available Text: O A d van ced P o w er Te c h n o l o g y O O s APT6040BNR 600V 18.0A 0.400 APT6045BNR 600V 17.0A 0.45S2 POWER MOS IV' UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT6040BNR APT6045BNR APT6040BNR APT6045BNR O-247AD	PDF
Untitled Abstract: No abstract text available Text: A dvanced P o w er Te c h n o lo g y APT6040BVR 600 ' 16 V 0 400 2 A . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	APT6040BVR O-247 APT6040BVR MIL-STD-750 O-247AD	PDF

Untitled Abstract: No abstract text available Text: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT6040SVR 600v i6a 0.400Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	APT6040SVR	PDF
APT6040SVR Abstract: J 122 Text: •r rM APT6040SVR ADVANCED R o w er T e c h n o lo g y 600V 16A 0.400Q POWER M OSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	APT6040SVR MIL-STD-750 J 122	PDF
APT6040BNR Abstract: No abstract text available Text: O D O S A dvanced P ow er Te c h n o l o g y APT6040BNR APT6045BNR G B 'íitK MOS r ü 600V 18.0A 0.40Q 600V 17.0A 0.45U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS >D Parameter APT6040BNR APT6045BNR UNIT	OCR Scan	APT6040BNR APT6045BNR APT6040/6045BNR O-247AD	PDF
as58 Abstract: No abstract text available Text: A dvanced R o w er Te c h n o l o g y • O D APT6040BN APT5540BN APT6045BN APT5545BN O s POWER MOS IVe 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40Í2 0.40Q 0.45Q 0.45Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT6040BN APT5540BN APT6045BN APT5545BN 5540BN 6040BN 5545BN 6045BN APT6040/5540/6045/5545BN as58	PDF
Untitled Abstract: No abstract text available Text: APT6040SVR A dvanced P o w er T e c h n o lo g y 600v 16A 0.4000 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	APT6040SVR 10OA/ps) MIL-STD-750	PDF
6045h Abstract: No abstract text available Text: ADVANCED POWER TECHNOLOGY blE D • DZS?^ 000GÖ21 IS? « A V P ADVANCED POW ER T e c h n o lo g y 9 POWER MOS IV _ APT6040HN 600V 16.5A 0.40Q APT5540HN 550V 16.5A 0.40Q APT6045HN 600V 15.5A 0.45D APT5545HN550V15.5A 0.45H N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	APT6040HN APT5540HN APT6045HN APT5545HN550V15 5540HN 6040HN 554SHN 6045HN APT6040/5540/6045/5545HN APT5S40/S545HI 6045h	PDF
5540A Abstract: 6040an apt6040an APT 6040AN PT6040 APT5540AN APT5545AN APT6045AN DDD047E 6045AN Text: ADVANCED POWER TECHNOLOGY M IE D OeST'ICH T IO * A V P A d va n c ed POWER ^ - 1 5 Te c h n o lo g y O D O DDDD47E APT6040AN APT5540AN APT6045AN APT5545AN S POWER MOS IV 600V 550V 600V 550V 15.5A 15.5A 14.5A 14.5A 0.40 0.40 0.45 0.45 £2 Cl ii £2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	DDD047E APT6040AN APT5540AN APT6045AN APT5545AN 5540AN 6040AN 5545AN 6045AN 5540A APT 6040AN PT6040 6045AN	PDF
APT6040BVR Abstract: 600V 16A 16FA Text: •r rM APT6040BVR ADVANCED R o w er T e c h n o lo g y 600V 16A 0.400Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	APT6040BVR O-247 MIL-STD-750 O-247AD 600V 16A 16FA	PDF
Untitled Abstract: No abstract text available Text: A dvanced P ow er Te c h n o l o g y O D APT6040BN APT5540BN APT6045BN APT5545BN O s POWER MOS IV' 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40Q 0.40Í2 0.45ÍÍ 0.45Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M0SFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT6040BN APT5540BN APT6045BN APT5545BN 5540BN 6040BN 5545BN 6045BN O-247AD	PDF
Untitled Abstract: No abstract text available Text: A d v a n ced P o w er Te c h n o l o g y O D APT6040BNR APT6045BNR O s POWER MOS IV“ 600V 18.0A 0.40U 600V 17.0A 0.450 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS b ' dm ^GS V GSM PD TJ’TSTG All Ratings: T c = 25°C unless otherwise specified.	OCR Scan	APT6040BNR APT6045BNR O-247AD	PDF

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APT6040 Datasheets (14)

APT6040 Datasheets Context Search

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6040BN

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APT6040BVFR

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5540a

6040BN

APT6040BNR

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APT6040SVR

APT6040BNR

as58

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6045h

5540A

APT6040BVR

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