APT68GA60B
Abstract: APT68GA60S MIC4452
Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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Original
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APT68GA60B
APT68GA60S
APT68GA60B
APT68GA60S
MIC4452
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PDF
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100c1a
Abstract: No abstract text available
Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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Original
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APT68GA60B
APT68GA60S
APT68GA60S
100c1a
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PDF
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Untitled
Abstract: No abstract text available
Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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Original
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APT68GA60B
APT68GA60S
switchin51
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PDF
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Untitled
Abstract: No abstract text available
Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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Original
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APT68GA60B
APT68GA60S
APT68GA60S
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PDF
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