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    APT8030LVR Price and Stock

    Microchip Technology Inc APT8030LVRG

    MOSFET N-CH 800V 27A TO264
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    Microchip Technology Inc APT8030LVRG Tube 26 Weeks
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    APT8030LVR Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT8030LVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8030LVRG Microchip Technology MOSFET N-CH 800V 27A TO264 Original PDF

    APT8030LVR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT8030LVR

    Abstract: No abstract text available
    Text: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		APT8030LVR O-264 O-264 APT8030LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		APT8030LVR O-264 O-264 PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8030LVR A dvanced P o w er Te c h n o l o g y 800V 27A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT8030LVR O-264 O-264AA PDF

    max7900

    Abstract: No abstract text available
    Text: APT8030LVR A dvanced po w er Te c h n o l o g y 800V 27A 0.300Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT8030LVR O-264 APT8030LVR max7900 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8030LVR A D V A N CED PO W ER Te c h n o l o g y 800V 27A 0.300Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT8030LVR O-264 PDF

    h137

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y APT8030LVR 800V ' 27A 0.300Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT8030LVR O-264 APT8030LVR MIL-STD-750 O-264AA h137 PDF

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr PDF