APX 2600 Search Results

APX 2600 Result Highlights (5)

Part	Manufacturer	Description
P9260-0NLG2	Renesas Electronics Corporation	Automotive Single Coil 15W Wireless Charging Transmitter
iW3626-00	Renesas Electronics Corporation	Single-Stage, 10W Offline SSL LED Driver with High Power Factor and Low Ripple
ISL32600EFBZ-T	Renesas Electronics Corporation	1.8V to 3.3V, Micro-Power, ±15kV ESD, +125°C, Slew Rate Limited, RS-485/RS-422 Transceivers
ISL32600EFBZ-T7A	Renesas Electronics Corporation	1.8V to 3.3V, Micro-Power, ±15kV ESD, +125°C, Slew Rate Limited, RS-485/RS-422 Transceivers
5962-93026-000	Renesas Electronics Corporation	54FCT2374T

APX 2600 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
7408 philips Abstract: MCD122 BFG33 transistor c 6093 L7E transistor IC 7408 ti HCC80 transistor 406 specification Hcc 036-0 lc 7408 Text: •I bbSBTBl 0054flCH Tb5 ■ APX P hilips Sem Product specification NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES b7E ]> PINNING PIN • High power gain	OCR Scan	0054flCH BFG33; BFG33/X BFG33 OT143 7408 philips MCD122 transistor c 6093 L7E transistor IC 7408 ti HCC80 transistor 406 specification Hcc 036-0 lc 7408	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and	OCR Scan	0031bDb BFQ66 OT173 OT173X	PDF
philips 4859 Abstract: No abstract text available Text: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency	OCR Scan	bbS3T31 D05SB11 BFR505 BFR505 philips 4859	PDF
BFR91 spice parameters Abstract: BF 194 transistor Philips FA 261 equivalent transistor of bfr93a SOT23 R2P transistor BFR93A 993 395 pnp npn BFT93 L7E transistor BFR93A Text: • bb53^31 0QB51fl2 MTM ■ APX Philips Semiconductors Product specification AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES BFR93A e PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 2 emitter	OCR Scan	0QB51fl2 BFR93A BFT93. feedback00 BFR91 spice parameters BF 194 transistor Philips FA 261 equivalent transistor of bfr93a SOT23 R2P transistor BFR93A 993 395 pnp npn BFT93 L7E transistor BFR93A	PDF
transistor 667 Abstract: No abstract text available Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2	OCR Scan	BFR93A BFT93. transistor 667	PDF
CD074 Abstract: No abstract text available Text: bb53T31 D DES IS1! D01 Philips Semiconductors N AMER PHI LIP S/DISCRETE APX NPN 5 GHz wideband transistor FEATURES Product specification b7E D £ BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion 1 base	OCR Scan	bb53T31 BFR92A BFT92. CD074	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency	OCR Scan	bbS3T31 00ESS33 BFR520 BFR520	PDF
BFR90A Abstract: transistor KT 209 M DIN 3967 BFR90A/02 vgb 0124 transistor kt 326 A441 BFQ51 kt 829 transistor KT 209 Text: Philips Semiconductors bbSB^Bl GD31Ö03 773 APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AMER PHILIPS/DISCRETE FEATURES b'iE D PINNING • Low noise • Low intermodulation distortion PIN DESCRIPTION 3 Code: BFR90A/02 • High power gain	OCR Scan	BFR90A ON4184) BFQ51. BFR90A transistor KT 209 M DIN 3967 BFR90A/02 vgb 0124 transistor kt 326 A441 BFQ51 kt 829 transistor KT 209	PDF
BT 1840 PA Abstract: No abstract text available Text: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure	OCR Scan	bb53T31 BFG67; BFG67/X; BFG67R; BFG67/XR BFG67 BFG67/X BFG67 OT143 BFG67) BT 1840 PA	PDF
Untitled Abstract: No abstract text available Text: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in	OCR Scan	003EQA7 BFT24	PDF
Untitled Abstract: No abstract text available Text: 00 31 6 0 3 773 Philips Sem iconductors M APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AUER PHILIPS/DISCRETE FEATURES b^E I> PINNING PIN • Low noise • Low intermodulation distortion DESCRIPTION Code: BFR90A/02 • High power gain	OCR Scan	BFR90A BFR90A/02 ON4184) BFQ51.	PDF
TAG 9109 Abstract: tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331 Text: • Philips Semiconductors bbS3T31 □ □ 2 I4Ö41 N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES ■ APX 350 Product specification b7E — : BFG67; BFG67/X; S ; BFG67R; BFG67/XR PINNING PIN DESCRIPTION • High power gain • Low noise figure	OCR Scan	bb53T31 BFG67 OT143 BFG67) BFG67/X) BFG67R BFG67/XR) BFG67 Co600 TAG 9109 tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331	PDF
s8014 transistor Abstract: No abstract text available Text: Philips Semiconductors bLS3^31 0 0 2 4 ^ 10R • APX Product specification N AUER PHILIPS/DISCRETE L7E NPN 9 GHz wideband transistor £ BFG520; BFG520/X; BFG520/XR FEATURES • High power gain • Low noise figure PINNING PIN DESCRIPTION • High transition frequency	OCR Scan	BFG520; BFG520/X; BFG520/XR BFG520 and08 s8014 transistor	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors bb53T31 D D 3S lb T Video driver hybrid amplifiers • APX Product specification CR3424; CR3425; CR3427 —— FEATURES Ifl? N AMER PHILIPS/DISCRETE b^E ]> PINNING -S O T 1 15 • Typical 10 to 90% transition times with C L = 10 pF:	OCR Scan	bb53T31 CR3424; CR3425; CR3427 OT348 pF/160 2600B, PM8943,	PDF

BFG195 Abstract: 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor Text: Philips Semiconductors bb53S31 □ □ 3 1 3 3 li 314 M APX Product specification NPN 7 GHz wideband transistor — ^ DESCRIPTION BFG195 N AUER PHILIPS/DISCRETE b'lE ]> PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband	OCR Scan	bbS3T31 0D313M4 BFG195 BFG195 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor	PDF
PMBT2369 Abstract: No abstract text available Text: • bbS3T3i oossasi n? « N APIER PHILIPS/DISCRETE apx PMBT2222 PMBT2222A b?E D r v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended fo r switching and linear appli cations in thick and thin-film circuits.	OCR Scan	PMBT2222 PMBT2222A PMBT2369	PDF
iw 1688 Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331 Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency	OCR Scan	GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331	PDF
Untitled Abstract: No abstract text available Text: • Philips Sem iconductors bb53T31 Q Q ^ a b l 14^ ■ APX NPN 5 GHz wideband transistors FEATURES • Product specification AUER PHILIPS/DISCRETE S b?E D ^ — BFG92A; BFG92A/X; BFG92A/XR PINNING PIN High power gain • Low noise figure • Gold metallization ensures	OCR Scan	bb53T31 BFG92A; BFG92A/X; BFG92A/XR BFG92A BFG92 OT143 BFG92A/X OT143.	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband	OCR Scan	Q0311b7 BFG34 MSB037 ON4497) OT103. CECC50	PDF
xl 1225 transistor Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300 Text: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband	OCR Scan	BFG135 OT223 MSB002 OT223. xl 1225 transistor BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300	PDF
Untitled Abstract: No abstract text available Text: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband	OCR Scan	BFG195	PDF
TAG 453 665 800 Abstract: tag 665 100 BFQ67 KMI 814 ha 431 transistor 2857 730 transistor RF NPN POWER TRANSISTOR C 10-12 GHZ philips 2322 662 9632 transistor ati 0943 Text: nu!1. 0 m b b s g ^ l DDESObb 3bD • APX „Product specification . , „ Philips Sem iconductors N AMER PHILIPS/DISCRETE b?E D NPN 8 GHz wideband transistor FEATURES BFQ67 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency	OCR Scan	BFQ67 TAG 453 665 800 tag 665 100 BFQ67 KMI 814 ha 431 transistor 2857 730 transistor RF NPN POWER TRANSISTOR C 10-12 GHZ philips 2322 662 9632 transistor ati 0943	PDF
Untitled Abstract: No abstract text available Text: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	OCR Scan	BFT93 BFR93 BFR93A.	PDF
NPN transistor SST 117 Abstract: No abstract text available Text: Philips Sem iconductors ^ b b 5 3 ^31 0 Q 3 1 cI b tl 5M 7 M APX Product specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 • N AMER PHILIPS/DISCRETE bTE D PINNING PIN DESCRIPTION • High power gain • Low noise figure • High transition frequency	OCR Scan	BFR540 BFR540 NPN transistor SST 117	PDF

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APX 2600 Search Results

APX 2600 Result Highlights (5)

APX 2600 Datasheets Context Search

7408 philips

Untitled

philips 4859

BFR91 spice parameters

transistor 667

CD074

Untitled

BFR90A

BT 1840 PA

Untitled

Untitled

TAG 9109

s8014 transistor

Untitled

BFG195

PMBT2369

iw 1688

Untitled

Untitled

xl 1225 transistor

Untitled

TAG 453 665 800

Untitled

NPN transistor SST 117