ARCO 465 Compression Trimmer Capacitor
Abstract: arco 469 trimmer capacitor arco mica trimmer arco 467 trimmer Arco 426 trimmer arco TRIMMER capacitor 463 trimmer capacitors arco 402 trimmer 3-30 pf arco 4611 capacitor arco TRIMMER capacitor
Text: Variable Compression Mica Trimmers and Padders Part Number Construction ST 0423 Type1 Numeric Designation2 1. 2. Tyge: ST; PC; C Numeric Designation: Indicates shape, construction, dimensions, and capacitance. STANDARD TRIMMERS These variable compression mica trimming capaci
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C-0426.
ARCO 465 Compression Trimmer Capacitor
arco 469 trimmer capacitor
arco mica trimmer
arco 467 trimmer
Arco 426 trimmer
arco TRIMMER capacitor 463
trimmer capacitors arco 402
trimmer 3-30 pf
arco 4611 capacitor
arco TRIMMER capacitor
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arco mica trimmer
Abstract: ARCO 308 m TRIMMERS arco 469 trimmer capacitor mica trimmer capacitor ARCO 465 Compression Trimmer Capacitor arco trimmer 308m arco TRIMMER capacitor Arco 426 trimmer arco 461 mica trimmer ARCO 308
Text: Variable Compression Mica Trimmers and Padders Part Number Construction ST 0423 Ty p e1 | N um eric Designation2 1. 2. Tyge: ST; PC; C Numeric Designation: Indicates shape, construction, dimensions, and capacitance. STANDARD TRIMMERS These variable compression mica trimming capaci
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F627-8Q1
Abstract: F627-8-Q1 indiana general DVD150T DVd030s indiana general ferrite transformer cores VMP4 Indiana general ferrite F627 DV2820W
Text: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5
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28Vdc
DV2805S
DV2805W
DV2805Z
DV2810S
DV2810W
DV2810Z
DV2820S
DV2820W
DV2820Z
F627-8Q1
F627-8-Q1
indiana general
DVD150T
DVd030s
indiana general ferrite transformer cores
VMP4
Indiana general ferrite
F627
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DV1210
Abstract: DV1205S ARCO 308 DV1230 ym 238 C 458 D DV1202 DV1205W trimmer capacitors arco 402 arco TRIMMER capacitor
Text: g Applications o Cl DV1205S 400 MHz Oscillator 2 Meter Amplifier 5 W Output ? c\ • ¡8 CJ 1 Parts List Li, 10 turns #22AWG on 1/4" diam eter, close wound L2, 3/4" length of #16 AWG C6, 1.5 to 20 pF, ARCO #402 trimmer c a p a c ito r C7 , 0.9 to 7 pF, ARCO #400 trimm er c a p a c ito r
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DV1205S
50VDC
DV1205S1
31/2T
DV1210
ARCO 308
DV1230
ym 238
C 458 D
DV1202
DV1205W
trimmer capacitors arco 402
arco TRIMMER capacitor
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DV2840S
Abstract: 0Q004
Text: 5642205 M/A-COM P H I DV2840S INC ^ 85D 00450 SL422DS □G0045Q D 3 * - / '4 2 N-Channel Enhancement - Mode RF Power FETs 175 MHz 2 0 -3 5 V 40 W 10 dB HF/VHF Amplifiers Class A, B or C High Dynamic Range Amp. Package Type S FEATURES • 20:1 VSWR ■ No Thermal Runaway
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Junc28V
DV2840S
0Q004
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balun 50 ohm
Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
balun 50 ohm
10k trimpot
mrf154 amplifier
wl gore
1N4148
1N5362
2204B
MRF154
trifilar
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VRF157FL
Abstract: 2204B MRF157 RL1009-5820-97-D1 Dielectric Laboratories 117nH arco TRIMMER capacitor 262 10E112
Text: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF157FL
80MHz
VRF157FL
30MHz,
MRF157
VRF157Fng
2204B
MRF157
RL1009-5820-97-D1
Dielectric Laboratories
117nH
arco TRIMMER capacitor 262
10E112
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VRF154
Abstract: arco mica trimmer wound trifilar 10 turns
Text: VRF154FL G VRF154FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
100MHz
30MHz,
MRF154
VRF154
arco mica trimmer
wound trifilar 10 turns
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
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MRF240
Abstract: BUY60 MRF240 equivalent
Text: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain
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MRF240/D
MRF240
MRF240
MRF240/D*
MRF240/D
BUY60
MRF240 equivalent
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Untitled
Abstract: No abstract text available
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55035
PD55035S
PowerSO-10RF
PD55035
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AN1294
Abstract: PD55035 PD55035S
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55035
PD55035S
PowerSO-10RF
PD55035
PowerSO-10RF.
AN1294
PD55035S
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AN1294
Abstract: PD55035 PD55035S S2186
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD55035
PD55035S
PowerSO-10RF
PD55035
PowerSO-10RF.
AN1294
PD55035S
S2186
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5251f
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
5251f
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
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MRF1517
Abstract: J104 MOSFET j332
Text: Freescale Semiconductor Technical Data MRF1517 Rev. 2, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFETs MRF1517NT1 MRF1517T1 The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1517
MRF1517NT1
MRF1517T1
J104 MOSFET
j332
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2743021446
Abstract: "RF power MOSFETs" A113 AN211A AN215A AN721 MRF1517 MRF1517NT1 MRF1517T1
Text: Freescale Semiconductor Technical Data MRF1517 Rev. 2, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFETs MRF1517NT1 MRF1517T1 The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1517
MRF1517NT1
MRF1517T1
MRF1517
MRF1517NT1
2743021446
"RF power MOSFETs"
A113
AN211A
AN215A
AN721
MRF1517T1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband
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MRF176GU/D
MRF176GU
MRF176GV
MRF176GU
MRF176GU/D*
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J104 MOSFET
Abstract: A113 AN211A AN215A AN721 MRF1517N MRF1517NT1
Text: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1517N
MRF1517NT1
J104 MOSFET
A113
AN211A
AN215A
AN721
MRF1517N
MRF1517NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1517N
MRF1517NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF1513 Rev. 7, 5/2006 Replaced by MRF1513NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF1513
MRF1513NT1.
MRF1513T1
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MHZ50
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1513
MRF1513NT1
MRF1513T1
MHZ50
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 4, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1517N
MRF1517NT1
MRF1517N
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AN721
Abstract: MRF1513 zener diode z10 A113 AN211A AN215A MRF1513NT1 MRF1513T1 cgs diode
Text: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1513
MRF1513NT1
MRF1513T1
MRF1513NT1
AN721
MRF1513
zener diode z10
A113
AN211A
AN215A
MRF1513T1
cgs diode
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