Untitled
Abstract: No abstract text available
Text: ARF Low Profile Wirewound Metal Clad Resistors Flexible design with high pulse capability, ideally suited to braking and inverter / converter applications. Enhanced power levels can be achieved when heatsink mounted. • High power density • Low profile
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150ppm/Â
ARF150
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Untitled
Abstract: No abstract text available
Text: ARF Low Profile Wirewound Metal Clad Resistors Flexible design with high pulse capability, ideally suited to braking and inverter / converter applications. Enhanced power levels can be achieved when heatsink mounted. • High power density • Low proile • 600V cables as standard
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150ppm/Â
ARF150
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AMPLIFIER 1500w
Abstract: ARF 250v 1500w rf power generator ARF1501 ARF1500 1500W Power Amplifier
Text: S D ARF1501 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S G S N - CHANNEL ENHANCEMENT MODE 250V 1500W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
ARF1500
40MHz
ARF1501
AMPLIFIER 1500w
ARF 250v 1500w
rf power generator
ARF1500
1500W Power Amplifier
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AMPLIFIER 1500w
Abstract: No abstract text available
Text: S D ARF1502 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 65V 1500W 40MHz The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1502
ARF1500
40MHz
ARF1500
AMPLIFIER 1500w
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MD8415B
Abstract: MD8415 MD8404 IRF 3250 MD8402 MD8405 0x0004 fujifilm
Text: LINK IEEE 1394 MD8415B User's Manual Preliminary FUJIFILM MICRODEVICES CO., LTD Ver 0.93 MEMO Preliminary MD8415B History of Revisions Issue No. 0.8 0.9 0.91 0.92 0.93 Ver 0.93 Date 14 May 1999 02 July 1999 05 July 1999 05 July 1999 23 July 2000 Contents of Revision
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MD8415B
MD8415.
MD8415B
MD8415
MD8404
IRF 3250
MD8402
MD8405
0x0004 fujifilm
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AMPLIFIER 1500w
Abstract: "beryllium oxide" ARF1500 ARF1501 ARF 1500
Text: S D ARF1501 S D ARF1500 BeO RF POWER MOSFET 135-05 G S N - CHANNEL ENHANCEMENT MODE S G S 250V 1500W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
ARF1500
40MHz
ARF1501
AMPLIFIER 1500w
"beryllium oxide"
ARF1500
ARF 1500
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Untitled
Abstract: No abstract text available
Text: S D ARF1502 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 65V 1500W 40MHz The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1502
ARF1500
40MHz
ARF1500
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Untitled
Abstract: No abstract text available
Text: S D ARF1501 S D ARF1500 BeO RF POWER MOSFET 135-05 G S N - CHANNEL ENHANCEMENT MODE S G S 250V 1500W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
ARF1500
40MHz
ARF1501
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250v 250w
Abstract: No abstract text available
Text: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 250W 60MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
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O-247
ARF461A
ARF461B
60MHz
ARF461B
250v 250w
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Untitled
Abstract: No abstract text available
Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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ARF1510
40MHz
ARF1510
125lb
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AMPLIFIER 1500w
Abstract: No abstract text available
Text: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1500
40MHz
ARF1500
AMPLIFIER 1500w
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power transistor 1802
Abstract: ARF1511 750w planar transistor C 4927 rf power generator ARF 250v 1500w
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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ARF1511
40MHz
ARF1511
power transistor 1802
750w planar transistor
C 4927
rf power generator
ARF 250v 1500w
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power transistor 1802
Abstract: transistor 010C ARF1510
Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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ARF1510
40MHz
ARF1510
power transistor 1802
transistor 010C
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AMPLIFIER 1500w
Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
Text: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1510
40MHz
ARF1510
125lb
AMPLIFIER 1500w
Simple test MOSFET Procedures
Transistor S1D
750w planar transistor
AN 1510
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Untitled
Abstract: No abstract text available
Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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ARF1510
40MHz
ARF1510
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C 4927
Abstract: AMPLIFIER 1500w Simple test MOSFET Procedures ARF1511
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1511
40MHz
ARF1511
125lb
C 4927
AMPLIFIER 1500w
Simple test MOSFET Procedures
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Untitled
Abstract: No abstract text available
Text: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S G S N - CHANNEL ENHANCEMENT MODE 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1500
40MHz
ARF1500
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ARF1511
Abstract: 225MH
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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ARF1511
40MHz
ARF1511
125lb
225MH
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ARF1505
Abstract: rf power generator
Text: S D ARF1505 S D ARF1505 BeO G 135-05 RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1505
40MHz
ARF1505
rf power generator
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rf power generator
Abstract: ARF1511 750w planar transistor ARF 250v 1500w
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1511
40MHz
ARF1511
125lb
rf power generator
750w planar transistor
ARF 250v 1500w
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Untitled
Abstract: No abstract text available
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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ARF1511
40MHz
ARF1511
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465B
Abstract: 700B ARF465A ARF465B VK200-4B
Text: ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
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ARF465A
ARF465B
O-247
60MHz
ARF465A
ARF465A/B
465B
700B
ARF465B
VK200-4B
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Untitled
Abstract: No abstract text available
Text: ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
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ARF465A
ARF465B
O-247
60MHz
ARF465A
ARF465A/B
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c3620
Abstract: c3260
Text: FAST SWITCHir Silicon diam. Type V RRM V DRM •t AV •t r m s ■t s m |2 t v T(TO) n f'djr'i d t crit dVD d t ,<crit V GT (KA) (A2S103) (V) (mQ) (A/,ts) (V/Ms) (V) Sine wave 10 ms (mm) (V) Sine wave 180° Th = 55°C (A) ATF 585 25 800 400 630 6.0 180
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a2s103)
b23M7
c3620
c3260
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