CW20C104K
Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
Text: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,
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AGA100M050
SKA100M050
AGA100M063
SKA100M063
AFK477M10F24T
AFK686M16D16T
AFK107M16D16T
AFK157M16X16T
AFK158M16H32T
AFK226M16C12T
CW20C104K
CL31B104KBNC
CY20C104M
474j capacitor
CL31B102KBNC
UP36BA0350
CW15C103K
ECPU01105MA5
CL21B104KBNC
CW20C473K
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9443
Abstract: 30 pin simm memory dynamic MCM54100A MCM94430S60 MCM94430S70 MCM94430SG60 MCM94430SG70 Nippon capacitors MOTOROLA CP-340
Text: MOTOROLA Order this document by MCM94430/D SEMICONDUCTOR TECHNICAL DATA 4M x 9 Bit Dynamic RAM Module The MCM94430 is a 36M dynamic random access memory DRAM module organized as 4,194,304 x 9 bits. The module is a 30–lead single–in–line memory module (SIMM) consisting of two MCM517400B and one MCM54100A DRAMs
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MCM94430/D
MCM94430
MCM517400B
MCM54100A
MCM94430
MCM94430/D*
9443
30 pin simm memory dynamic
MCM94430S60
MCM94430S70
MCM94430SG60
MCM94430SG70
Nippon capacitors
MOTOROLA CP-340
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5Bp power control
Abstract: Motorola CMOS Dynamic RAM 2m x 8 Nippon capacitors
Text: MOTOROLA Order this document by MCM36204/D SEMICONDUCTOR TECHNICAL DATA MCM36204 2M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36204 is a 72M dynamic random access memory DRAM module organized as 2,097,152 x 36 bits. The module is a double-sided 72-lead single-inline memory module (SIMM) consisting of eighteen MCM54400AN DRAMs
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MCM36204/D
MCM36204
MCM36204
72-lead
MCM54400AN
MCM36204/D*
5Bp power control
Motorola CMOS Dynamic RAM 2m x 8
Nippon capacitors
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simm 72 dram
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MCM36104/D SEMICONDUCTOR TECHNICAL DATA MCM36104 1M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory
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MCM36104/D
MCM36104
MCM36104
72-lead
MCM54400AN
MCM36104/D*
simm 72 dram
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: MICRONAS INTERMETALL ASC 3553O Audio Stereo Codec MICRONAS Edition Aug. 5, 1998 6251-333-3DS ASC 3553O Contents Page Section Title 3 1. Introduction 3 3 3 3 3 4 4 4 5 5 5 5 5 6 6 6 6 7 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.10. 2.11. 2.12. 2.13.
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3553O
6251-333-3DS
3553O
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MCM94000
Abstract: MCM94000AS70 MCM54100A MCM94000AS60 MCM94000ASG60 MCM94000ASG70 MCM94000SC70 Nippon capacitors
Text: MOTOROLA Order this document by MCM94000/D SEMICONDUCTOR TECHNICAL DATA MCM94000 4M x 9 Bit Dynamic Random Access Memory Module The MCM94000 is a 36M dynamic random access memory DRAM module organized as 4,194,304 x 9 bits. The module is a 30–lead single–in–line memory
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MCM94000/D
MCM94000
MCM94000
MCM54100A
MCM94000/D*
MCM94000AS70
MCM94000AS60
MCM94000ASG60
MCM94000ASG70
MCM94000SC70
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM36404/D SEMICONDUCTOR TECHNICAL DATA MCM36404 Product Preview 4M x 36 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM36404 is a dynamic random access memory DRAM module organized as 4,194,304 x 36 bits. The module is a single–sided 72–lead
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MCM36404/D
MCM36404
MCM36404
MCM517400B
MCM36404/D*
Nippon capacitors
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SM5362000
Abstract: SM5362000-7
Text: SM5362000 March 1994 Rev 2 SMART Modular Technologies SM5362000 8MByte 2M x 36 CMOS DRAM Module General Description Features The SM5362000 is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM5362000
SM5362000
72-pin,
60/70/80ns
264mW
132mW
SM5362000-7
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simm 72 dram
Abstract: MCM36800AS60 Nippon capacitors
Text: MOTOROLA Order this document by MCM36800/D SEMICONDUCTOR TECHNICAL DATA MCM36800 8M x 36 Bit Dynamic Random Access Memory Module AS PACKAGE SIMM MODULE CASE 866J–01 TOP VIEW The MCM36800 is a dynamic random access memory DRAM module organized as 8,388,608 x 36 bits. The module is a 72–lead single–in–line memory module
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MCM36800/D
MCM36800
MCM36800
MCM517400B
MCM54100AN
MCM36800/D*
simm 72 dram
MCM36800AS60
Nippon capacitors
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MCM36400ASH60
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MCM36400/D SEMICONDUCTOR TECHNICAL DATA MCM36400 4M x 36 Bit Dynamic Random Access Memory Module AS PACKAGE SIMM MODULE CASE 866J–01 The MCM36400 is a dynamic random access memory DRAM module organized as 4,194,304 x 36 bits. The module is a 72–lead single–in–line memory module
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MCM36400/D
MCM36400
MCM36400
MCM517400B
MCM54100AN
MCM36400/D*
MCM36400ASH60
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM36804/D SEMICONDUCTOR TECHNICAL DATA MCM36804 Product Preview 8M x 36 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM36804 is a dynamic random access memory DRAM module organized as 2,097,152 x 36 bits. The module is a double–sided 72–lead
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MCM36804/D
MCM36804
MCM36804
MCM517400B
MCM517400B
MCM36804/D*
Nippon capacitors
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Hitachi DSA00164
Abstract: Nippon capacitors
Text: HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module 36 pcs of 16M × 4 components ADE-203-872B (Z) Rev. 1.0 June 23, 1998 Description The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been
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HB56SW3272ESK-5/6
256MB
32-Mword
72-bit,
ADE-203-872B
HB56SW3272ESK
64-Mbit
HM5165405)
16-bit
Hitachi DSA00164
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D
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M53640800DW0/DB0
M53640810DW0/DB0
M53640810DW0/DB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
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Hitachi DSA00164
Abstract: Nippon capacitors
Text: HB56SW3272ESNK-6A/7A 256MB Unbuffered EDO DRAM DIMM 32M-word x 72-bit, 4k Refresh, 2 Bank Module 36 pieces of 16M × 4 components ADE-203-840 (Z) Preliminary Rev. 0.0 Oct. 29, 1997 Description The HB56SW3272ESNK is a 32M × 72 dynamic RAM module, mounted 36 pieces of 64-Mbit DRAM
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HB56SW3272ESNK-6A/7A
256MB
32M-word
72-bit,
ADE-203-840
HB56SW3272ESNK
64-Mbit
HM5165405)
Hitachi DSA00164
Nippon capacitors
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256Kx1 dram pinout
Abstract: No abstract text available
Text: SM536256 August 1994 Rev 2 SMART Modular Technologies SM536256 1MByte 256K x 36 CMOS DRAM Module General Description Features The SM536256 is a high performance, 1-megabyte dynamic RAM module organized as 256K words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM536256
SM536256
72-pin,
256Kx4
256Kx1
70/80/100ns
256Kx1 dram pinout
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Untitled
Abstract: No abstract text available
Text: EM MICROELECTRONIC - MARIN SA EM4083 3D Active Long Range Front-End General Description Features The EM4083 is a CMOS integrated circuit intended for hands-free or multidimensional wireless communication systems at 125kHz. It integrates a high sensitivity low frequency AM receiver
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EM4083
EM4083
125kHz.
115kHz
140kHz
4083-DS
22-Jul-10
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EM4083TP16A-007
Abstract: EM4083 hf ask lf Receiver tuning capacitors EM4083 AN415 C4083 EM6640 TSSOP16 TSSOP-16 amplifier diagram
Text: EM MICROELECTRONIC - MARIN SA EM4083 3D Active Long Range Front-End General Description Features The EM4083 is a CMOS integrated circuit intended for hands-free or multidimensional wireless communication systems at 125kHz. It integrates a high sensitivity low frequency AM receiver
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EM4083
EM4083
125kHz.
115kHz
140kHz
4083-DS
22-Jul-10
EM4083TP16A-007
hf ask lf Receiver
tuning capacitors EM4083
AN415
C4083
EM6640
TSSOP16
TSSOP-16
amplifier diagram
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EM4083TP16A-007
Abstract: 16PF EM4083 EM-408 C4083 EM6640 TSSOP16 TSSOP-16 7136 DIODE BAT
Text: EM MICROELECTRONIC - MARIN SA EM4083 3D Active Long Range Front-End General Description Features The EM4083 is a CMOS integrated circuit intended for hands-free or multidimensional wireless communication systems at 125kHz. It integrates a high sensitivity low frequency AM receiver
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EM4083
EM4083
125kHz.
115kHz
140kHz
EM4083TP16A-007
16PF
EM-408
C4083
EM6640
TSSOP16
TSSOP-16
7136
DIODE BAT
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X329F
Abstract: No abstract text available
Text: « ^CAPACITORS Snubber Capacitors 329 and X329 Dimensions 1.65" (Step * Style 329S & X329S L J H W- .600“ .550 (14mm) Standard ASC IGBT Capacitor Mounting i .025" THK Terminal 111' "^1 ]r - 1 — I L—J U .240" Step Terminal Holes Style 329S & X329S and
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X329S
X329S
X329F
20-29mm)
X329G
39-48mm)
X329F
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polystyrene TRW capacitor
Abstract: No abstract text available
Text: Polystyrene Metallized Carrier Capacitors Wrap & Fill Case Type X863 Formerly TRW X1263 Series • • • • • • • Self-Healing Subminiature Size Excellent Retrace Extremely High IR Very Low Dielectric Absorption High Voltage Breakdown Low Controlled Negative TCC:
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X1263
70ppm/
polystyrene TRW capacitor
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L3N1
Abstract: bt 2025 bh
Text: ASC 35530 Contents Page Section Title 3 1. Introduction 3 3 3 3 3 4 4 4 2. Functional Description Analog Input Multiplexer Analog Input Gain Analog Output Attenuation Output Mute Digital I/O Port Valid Data Indicator Automatic Sampling Rate Detection Other Sampling Rates
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H330n
L3N1
bt 2025 bh
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Untitled
Abstract: No abstract text available
Text: >4SC DV/DT Ratings Standard Capacitor DV/DT Ratings Below are tables listing the DV/DT ratings for the standard capacitor types. The data within these tables can be used to determine the maximum peak pulse current that these products can withstand. Unusual waveforms and/or duty cycles may require
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Mi469
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K752
Abstract: No abstract text available
Text: Types X386 rs / X387 (rk) / X388 / X389 Metallized Polypropylene Capacitors Oil-Filled / Metal Encased See Page 54 • 50% Size and Weight Reduction over Conventional Designs • Extremely Low Losses and Heat Dissipation • Non-PCB SPEARINOL III Oil
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X388-X
X386S
370Vac
X386D
X387S
X387D
X388S
X389S
K752
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM36100R8 Product Preview 1M x 36 Bit Dynamic Random Access Memory Card The MCM36100R8 is a 5 V DRAM Memory Card organized as a single memory bank of 1,048,576 x 36 bits. The card is a JEDEC-standard Type 1, 88-pin DRAM
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MCM36100R8
MCM36100R8
88-pin
MCM5L4400A
36100R860
36100R870
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