D-73277
Abstract: SQ 4849 QUARTZ D-73277 Owen asi bus SQ 4849 SE432 mc1747 AS-Interface circuit diagram D4021 parallel to ASI
Text: AS2701 ASI Slave IC DATA SHEET Key Features - General Description Simple two-wire bus ASI line Transmission of both power and signal on the ASI line Decoupling of power and signal by the IC without additional external devices Transmitting protocol for using the IC and the ASI
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AS2701
30-Oct-03
D-73277
SQ 4849 QUARTZ
D-73277 Owen
asi bus
SQ 4849
SE432
mc1747
AS-Interface circuit diagram
D4021
parallel to ASI
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D-73277
Abstract: BRYANT fuse holder parallel serial interface asi parallel to ASI D-73277 Owen AS2701AT
Text: AS2701A ASI Slave IC Data Sheet ASI Slave IC AS2701A Key Features • • • • • • • • • • Simple two-wire bus ASI line Transmission of both power and signal on the ASI line Decoupling of power and signal by the IC without additional external devices
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AS2701A
AS2701A
AS2701AT
D-73277
BRYANT fuse holder
parallel serial interface asi
parallel to ASI
D-73277 Owen
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D-73277
Abstract: asi bus chris Diode LT 5333 LEUZE OTTO P3
Text: AS2701A Datasheet AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity
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AS2701A
AS2701
D-73277
asi bus
chris
Diode LT 5333
LEUZE
OTTO P3
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Diode LT 5333
Abstract: asi bus AS-Interface circuit diagram D-73277 SQ 4849 QUARTZ leuze D-73277 Owen AS-Interface Programmer SQ 4849 AS2701
Text: AS2701A Datasheet AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity
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AS2701A
AS2701
Diode LT 5333
asi bus
AS-Interface circuit diagram
D-73277
SQ 4849 QUARTZ
leuze
D-73277 Owen
AS-Interface Programmer
SQ 4849
AS2701
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BLV59
Abstract: No abstract text available
Text: ASI BLV59 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Intrnal Matching • Emitter Ballasting
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BLV59
BLV59
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Untitled
Abstract: No abstract text available
Text: ASI Semiconductor, Inc. ASI designs, manufactures and markets stateof-the-art high power, pulsed RF transistors and modules. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF military and commercial applications; avionics,
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TVU005
Abstract: No abstract text available
Text: ASI TVU005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVU005 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting
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TVU005
TVU005
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SD1537-2
Abstract: SD1537 "RF Power Transistor"
Text: ASI SD1537-2 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .175 2L FLG DESCRIPTION: The ASI SD1537-2 is a Common Base Device Class C, Designed for IFF Applications. FEATURES INCLUDE: • Gold Metelization • InputMatching • Broad Band Performance MAXIMUM RATINGS
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SD1537-2
SD1537-2
SD1537
"RF Power Transistor"
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Untitled
Abstract: No abstract text available
Text: ASI SD153008 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD153008 is a Common Base Device Designed for DME IFF, and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG A
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SD153008
SD153008
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S-5028
Abstract: S-50-28 MP transistor
Text: ASI S50-28/MP NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S50-28/MP is Designed for Class AB or C, Common Emitter Linear HF Communications Applications. PACKAGE STYLE .500" 4L FLG FEATURES INCLUDE: • hFE Matching High Power Gain Emitter Ballasting
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S50-28/MP
S50-28/MP
S-5028
S-50-28
MP transistor
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Untitled
Abstract: No abstract text available
Text: ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1538-8 is a Common Base Device Designed for DME IFF, and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metelization • InputMatching • Broad Band Performance PACKAGE STYLE 250 2L FLG A
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SD1538-8
SD1538-8
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Diode LT 5333
Abstract: D-73277 f9250
Text: AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity protection diode and a suppressor diode. The line is
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AS2701
trans75
Diode LT 5333
D-73277
f9250
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BLX15
Abstract: TRANSISTOR blx15 A5015
Text: ASI BLX15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX15 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS
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BLX15
BLX15
TRANSISTOR blx15
A5015
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TPV-3100
Abstract: TPV3100 transistor tpv3100
Text: ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV3100 is a Class AB Common Device Designed for Television Band IV & V Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting Internal Matching • PACKAGE STYLE .450 BAL FLG. A
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TPV3100
TPV3100
TPV-3100
transistor tpv3100
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Untitled
Abstract: No abstract text available
Text: ASI SD1541-01 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1541-01 is a Common Base Device Designed for DME Pulse Applications. PACKAGE STYLE .400 2L FLG FEATURES INCLUDE: • Gold Metalization • Input/Output Matching MAXIMUM RATINGS IC 22 A VCES
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SD1541-01
SD1541-01
to1150
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S15-28
Abstract: No abstract text available
Text: ASI S15-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S15-28 is Designed for Class AB or C, Common Emitter Linear HF Communications Applications. PACKAGE STYLE .380" 4L FLG FEATURES INCLUDE: • High Power Gain Emitter Ballasting • MAXIMUM RATINGS
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S15-28
S15-28
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85206
Abstract: No abstract text available
Text: ASI 85206 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 85206 is Designed for Common Collector Oscillator Applications up to 2.3 GHz. PACKAGE STYLE .250 2L FLG A ØD FEATURES INCLUDE: B E • Direct Replacement for MSC85206 • Hermetic Flange Package
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MSC85206
85206
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Untitled
Abstract: No abstract text available
Text: ASI SD1541-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1541-1 is a Common Base Device Designed for, DME Pulse Applications. FEATURES INCLUDE: PACKAGE STYLE .400 2L FLG B • Gold Metalization • Input/Output Matching MAXIMUM RATINGS IC 40 A
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SD1541-1
SD1541-1
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S50-28
Abstract: S-50 "RF Power Transistor" "RF Power"
Text: ASI S50-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S50-28 is Designed for Class AB or C, Common Emitter Linear HF Communications Applications. PACKAGE STYLE .500" 4L FLG FEATURES INCLUDE: • High Power Gain • Emitter Ballasting MAXIMUM RATINGS
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S50-28
S50-28
S-50
"RF Power Transistor"
"RF Power"
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SD1542-42
Abstract: 5002l
Text: ASI SD1542-42 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 X 500 2L FLG The ASI SD1542-42 is a Common Base Device Designed for, IFF and DME Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed
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SD1542-42
SD1542-42
5002l
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SD1536-08
Abstract: TACAN
Text: ASI SD1536-08 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 SQ 2L FL DESCRIPTION: The ASI SD1536-08 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 1 3 FEATURES INCLUDE: 2 • Gold Metallization • Internal Impedance Matching
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SD1536-08
SD1536-08
TACAN
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TACAN
Abstract: SD1530-7
Text: ASI SD1530-7 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG A
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SD1530-7
SD1530-7
TACAN
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TPV3100
Abstract: TPV-3100 transistor tpv3100 "Power TRANSISTOR"
Text: ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 8L FLG The ASI TPV3100 is a Class A Common Device Designed for Television Band III Applications. C D F U LL R G O F E FEATURES INCLUDE: .1925 • Gold Metalization • Emitter Ballasting
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TPV3100
TPV3100
TPV-3100
transistor tpv3100
"Power TRANSISTOR"
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HXTR-5101
Abstract: 2N6701
Text: m ASI 2N6701 \ \ SILICON NPN RF TRANSISTOR DESCRIPTION: The ASI 2N6701 is Designed for Linear Power Amplifier Applications to 4 GHz . FEATURES: • Direct Replacement for 2N6701 & HP HXTR5101 • Gold Metalization • Hermetic Package MAXIMUM RATINGS 120 lc
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2N6701
2N6701
HXTR5101
80metic
HXTR-5101
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