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    ASI10711 Datasheets (1)

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    ASI10711 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

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    VHB1-12T

    Abstract: ASI10711 transistor 335
    Text: VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE TO-39 FEATURES: • Class C Operation • PG = 10 dB at 1.0 W/175 MHz • Omnigold Metalization System


    Original     		VHB1-12T VHB1-12T ASI10711 ASI10711 transistor 335 PDF

    ASI10711

    Abstract: VHB1-12T
    Text: VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for PACKAGE STYLE TO-39 FEATURES: B C 45° ØA • • • Omnigold Metalization System ØD E F MAXIMUM RATINGS IC 400 mA MAX VCBO 40 V VCEO 20 V VCER 40 V PDISS O O .029 / 0.740


    Original     		VHB1-12T VHB1-12T ASI10711 ASI10711 PDF