Untitled
Abstract: No abstract text available
Text: LatticeMico Asynchronous SRAM Controller The LatticeMico asynchronous SRAM controller is a slave device for the WISHBONE architecture. It interfaces to an industry-standard asynchronous SRAM device. Version This document describes the 3.2 version of the LatticeMico asynchronous
|
Original
|
32-bit
|
PDF
|
CY7C144V
Abstract: CY7C017 CY7C109-VC
Text: Cypress Semiconductor Qualification Report QTP# 99395 VERSION 1.0 January, 2000 Synchronous/Asynchronous Dual Port SRAM 3.3V and 5V R42HD Technology, Fab 4 Qualification CY7C026(V)/CY7C036(V) 16K x 16/18 Asynchronous DP SRAM CY7C025(V)/CY7C0251(V) 8K x 16/18 Asynchronous DP SRAM
|
Original
|
R42HD
CY7C026
/CY7C036
CY7C025
/CY7C0251
CY7C024
/CY7C0241
CY7C09269
/CY7C09369
x16/18
CY7C144V
CY7C017
CY7C109-VC
|
PDF
|
A3210
Abstract: AM7201 CY7C419 CY7C421 IDT7201
Text: CY7C421512 x 9 Asynchronous FIFO CY7C421 512 × 9 Asynchronous FIFO 512 × 9 Asynchronous FIFO Features • Asynchronous First-In First-Out FIFO Buffer Memories ❐ 512 × 9 (CY7C421) ■ Dual-Ported RAM Cell ■ High Speed 50 MHz Read and Write Independent of Depth and
|
Original
|
CY7C421512
CY7C421
CY7C421)
300-Mil
IDT7201,
AM7201
A3210
AM7201
CY7C419
CY7C421
IDT7201
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CY7C421512 x 9 Asynchronous FIFO CY7C421 512 × 9 Asynchronous FIFO 512 × 9 Asynchronous FIFO Features • Asynchronous First-In First-Out FIFO Buffer Memories ❐ 512 × 9 (CY7C421) ■ Dual-Ported RAM Cell ■ High Speed 50 MHz Read and Write Independent of Depth and
|
Original
|
CY7C421512
CY7C421
CY7C421)
300-Mil
IDT7201,
AM7201
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CY7C421512 x 9 Asynchronous FIFO CY7C421 512 × 9 Asynchronous FIFO 512 × 9 Asynchronous FIFO Features • Asynchronous First-In First-Out FIFO Buffer Memories ❐ 512 × 9 (CY7C421) ■ Dual-Ported RAM Cell ■ High Speed 50 MHz Read and Write Independent of Depth and
|
Original
|
CY7C421512
CY7C421
CY7C421)
300-Mil
IDT7201,
AM7201
|
PDF
|
M5M418165
Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16
|
Original
|
Q4--2000
1Mx18
512Kx36
SE-597
x2255
M5M418165
NEC 2581
CSP-48
AS7C33256PFS18A
tc5588
KM6865
FLASH CROSS
256K16
TR-81090
la 4620
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PARADIGM Product Family MODULES Secondary Level Cache Modules Static RAM Modules • • • • • • • • PDM4M096S PDM4M096L PDM4M4030 PDM4M4040 PDM4M4050 PDM4M4060 PDM4M4110 PDM4M4120 512K x 8 Asynchronous (512K x 8 Asynchronous) (64Kx 32 Asynchronous)
|
OCR Scan
|
PDM4M096S
PDM4M096L
PDM4M4030
PDM4M4040
PDM4M4050
PDM4M4060
PDM4M4110
PDM4M4120
512Kx
82420TX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SM364T8AO84XGXX May 1995 Rev 3 SMART Modular Technologies SM364T8AO84XGXX 256KByte 32Kx64 Asynchronous Secondary Cache SRAM Module General Description Features The SM364T8AO84XGXX is a high performance, 256 Kilobyte asynchronous secondary cache SRAM module
|
Original
|
SM364T8AO84XGXX
256KByte
32Kx64)
SM364T8AO84XGXX
160-pin,
32Kx8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SM364T8AO83XGXX May 1995 Rev 3 SMART Modular Technologies SM364T8AO83XGXX 256KByte 32Kx64 Asynchronous Secondary Cache SRAM Module General Description Features The SM364T8AO83XGXX is a high performance, 256 Kilobyte asynchronous secondary cache SRAM module
|
Original
|
SM364T8AO83XGXX
256KByte
32Kx64)
SM364T8AO83XGXX
160-pin,
32Kx8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SM364T8AOM3XGXX May 1995 Rev 1 SMART Modular Technologies SM364T8AOM3XGXX 256KByte 32Kx64 Asynchronous Secondary Cache SRAM Module General Description Features The SM364T8AOM3XGXX is a high performance, 256 Kilobyte asynchronous secondary cache SRAM module
|
Original
|
SM364T8AOM3XGXX
256KByte
32Kx64)
SM364T8AOM3XGXX
82C590
160-pin,
32Kx8
|
PDF
|
2x16K
Abstract: DSP16210 MO-151
Text: ^EDI DSP SOLUTIONS Memory Solution for lucentTechnologies DSP16210 ELECTRONIC DESIGNS, INC. EDI8I21665V 2x64Kxl6 Asynchronous SRAM The EDI8L21665V is a member of EDI’s Asynchronous SRAM family designed in support of LucentTechnologies DSP16210 DSPs. The
|
OCR Scan
|
DSP16210
EDI8L21665V
2k64Kk16
DSP16210
2x64Kx16
15mmx
12nsand
2x16Kx16
2x16K
MO-151
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CY14V116F7 CY14V116G7 PRELIMINARY 16-Mbit nvSRAM with Asynchronous NAND Interface 16-Mbit nvSRAM with Asynchronous NAND Interface Features Overview • Cypress nvSRAM combines high-performance SRAM cells with nonvolatile elements in a monolithic integrated circuit. The
|
Original
|
CY14V116F7
CY14V116G7
16-Mbit
|
PDF
|
10541
Abstract: A0-A21 BCR10 M69KB096AA M69KB
Text: M69KB096AA 64 Mbit 4M x16 1.8V Burst PSRAM FEATURES SUMMARY • ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 3.3V for I/O buffers ASYNCHRONOUS MODES – Asynchronous Random Read: 70ns and 85ns access time – Asynchronous Write
|
Original
|
M69KB096AA
66MHz,
80MHz
10541
A0-A21
BCR10
M69KB096AA
M69KB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M69KB096AA 64 Mbit 4M x16 1.8V Burst PSRAM FEATURES SUMMARY • ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 3.3V for I/O buffers ASYNCHRONOUS MODES – Asynchronous Random Read: 70ns and 85ns access time – Asynchronous Write
|
Original
|
M69KB096AA
66MHz,
80MHz
|
PDF
|
|
EMIF sdram full example code
Abstract: SPRA542 EMIF sdram full example C6201 TC55V1664FT-12 TMS320C6000 C6x External Memory Interface EMIF programming tms320c6000 TC55V1664BFT-12 TC55V1664BFT12
Text: Application Report SPRA542 TMS320C6000 EMIF to External Asynchronous SRAM Interface Kyle Castille Digital Signal Processing Solutions Abstract Interfacing external asynchronous static RAM ASRAM to the Texas Instruments (TI ) TMS320C6000 series of digital signal processors (DSPs) is simple compared to previous
|
Original
|
SPRA542
TMS320C6000
TC55V1664FT-12
IDT71V016S25
EMIF sdram full example code
SPRA542
EMIF sdram full example
C6201
TC55V1664FT-12
C6x External Memory Interface EMIF
programming tms320c6000
TC55V1664BFT-12
TC55V1664BFT12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSP SOLUTIONS Memory Solution for Lucent Technologies DSP16210 H f l L . LX I ELECTRONIC DESIGNS, INC. EDI8I21665V 2x64Kx16 Asynchronous SRAM The EDI8L21665V is a member of EDI’s Asynchronous SRAM family designed in support of Lucent Technologies DSP16210 DSPs. The
|
OCR Scan
|
DSP16210
EDI8I21665V
2x64Kx16
EDI8L21665V
DSP16210
EDI8L21665V
2x16Kx16
EDI8L21665VxxBC
EDI8L216128VxxBC
|
PDF
|
"Memory Interfaces"
Abstract: ICS501 C6201 TC55V1664FT-12 TMS320C6000 programming tms320c6000 TC55V1664BFT-12 EMIF sdram full example C6701 EMIF sdram full example code
Text: Application Report SPRA542A TMS320C6000 EMIF to External Asynchronous SRAM Interface Kyle Castille Digital Signal Processing Solutions Abstract Interfacing external asynchronous static RAM ASRAM to the Texas Instruments (TI ) TMS320C6000 series of digital signal processors (DSPs) is simple compared to previous
|
Original
|
SPRA542A
TMS320C6000
TC55V1664FT-12
IDT71V016S25
"Memory Interfaces"
ICS501
C6201
TC55V1664FT-12
programming tms320c6000
TC55V1664BFT-12
EMIF sdram full example
C6701
EMIF sdram full example code
|
PDF
|
Error Correction
Abstract: hamming code error correction code Asynchronous SRAM
Text: Error Correction Code ECC Based New High Speed Low Power 4Mb Asynchronous SRAM ISSI’s latest Error Correction based 4Mb High Speed Low Power Asynchronous SRAM is currently sampling. This innovative design reinforces ISSI’s long-term commitment to SRAMs with
|
Original
|
IS64WV25616EDBLL
-40oC
125oC)
Error Correction
hamming code
error correction code
Asynchronous SRAM
|
PDF
|
SRAM timing
Abstract: 74FCT Off Chip Driver
Text: Application Note AN-04 Key Specifications for Asynchronous, Burst, and Pipelined Cache SRAMs Asynchronous, burst and pipelined burst data to the CPU. The sum of address generation SRAMs are used in high speed cache designs. The key performance specifications for each
|
Original
|
AN-04
SRAM timing
74FCT
Off Chip Driver
|
PDF
|
JESD97
Abstract: FBGA71 rl3410 M69AB048 E1-57 X 30 M69KB048BD
Text: M69KB048BD M69AB048BD 32 Mbit 2M x16 1.8V Supply, Burst PSRAMs Features • Asynchronous SRAM Interface ■ Fast Access Time: 70ns ■ Asynchronous Page Read – Page Size: 8 Words – First Access within page: 70ns – Subsequent read within page: 20ns
|
Original
|
M69KB048BD
M69AB048BD
FBGA71
JESD97
FBGA71
rl3410
M69AB048
E1-57 X 30
M69KB048BD
|
PDF
|
CY7C197B
Abstract: CY7C197B-12VC CY7C197B-25PC
Text: CY7C197B 256 Kb 256K x 1 Static RAM General Description1 Features The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K x 1 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces
|
Original
|
CY7C197B
CY7C197B
CY7C197B-12VC
CY7C197B-25PC
|
PDF
|
4327
Abstract: LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-70 LC36256AMLL-85
Text: Ordering number : EN4327A Asynchronous Silicon Gate CMOS LSI LC36256ALL, AMLL-70/85/10/12 256 K 32768 words x 8 bits SRAM Overview Package Dimensions The LC36256ALL, AMLL are fully asynchronous silicon gate CMOS static RAMs with a 32768 words × 8 bits
|
Original
|
EN4327A
LC36256ALL,
AMLL-70/85/10/12
012A-DIP28
LC36256ALL]
4327
LC36256ALL
LC36256ALL-10
LC36256ALL-12
LC36256ALL-70
LC36256ALL-85
LC36256AMLL-10
LC36256AMLL-70
LC36256AMLL-85
|
PDF
|
67-ball
Abstract: NanoAmp Solutions
Text: NanoAmp Solutions, Inc. N08C1618E6A 44MEG ASYNCHRONOUS/PAGE FLASH 1982 Zankerx Road, Jose, CA 95112 MEG x16 16San ASYNCHRONOUS/PAGE FLASH N08C1620E6A ph: 408-573-8878, FAX: 408-573-8877 52K x 16 SRAM COMBO MEMORY 512K x 16 SRAM COMBO MEMORY Advance Information
|
Original
|
N08C1618E6A
1982MEGx
N08C1620E6A
512Kx
64x08
4Mbx16)
512Kbx16)
67-Ball
64-bit
N08C16xxE6A
NanoAmp Solutions
|
PDF
|
SRAM timing
Abstract: CY7C1088 PM7322 PM7323 PMC-940904 RCMP200
Text: PMC-Sierra, Inc. APPLICATION NOTE ISSUE 1 PM7323 RCMP-200 ASYNCHRONOUS SRAM FOR RCMP-200 PM7323 ASYNCHRONOUS SRAM FOR RCMP-200 Issue 1: April 1, 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300 Proprietary and Confidential
|
Original
|
PM7323
RCMP-200
PM7323
PMC-960338
SRAM timing
CY7C1088
PM7322
PMC-940904
RCMP200
|
PDF
|