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    C5750X7S2A106MT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz


    Original     		PDF MRF8S18210WHS MRF8S18210WHSR3 MRF8S18210WGHSR3 from1805 MRF8S18210WHSR3 C5750X7S2A106MT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    A114

    Abstract: AN1955 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
    Text: Freescale Semiconductor Technical Data MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 MRF6S9130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9130HR3/HSR3 MRFE6S9130HR3/HSR3. PCN12895 MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3 MRF6S9130H A114 AN1955 JESD22 MRF6S9130H MRF6S9130HSR3

    ATC100B102JP50XT

    Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi
    Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 20ers, MRF6P9220H ATC100B102JP50XT nippon capacitors JESD22 A114 AN1955 ATC100B101JP500XT Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 5, 8/2008 MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9130H MRF6S9130HR3/HSR3 MRFE6S9130HR3/HSR3. PCN12895 MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to


    Original     		PDF MRF6S27015N MRF6S27015NR1 MRF6S27015GNR1 15yees, MRF6S27015NR1

    ATC100B100BT500XT

    Abstract: No abstract text available
    Text: Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100N ATC100B100BT500XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 --63ubsidiaries, MRF6S18100NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6P9220H MRFE6P9220HR3

    J2190

    Abstract: A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1 MRF6S27015NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 1, 6/2007 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to


    Original     		PDF MRF6S27015N MRF6S27015NR1 MRF6S27015GNR1 MRF6S27015NR1 J2190 A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1

    NI-880XS-2

    Abstract: J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S aft18s290-13s AFT18S290 ATC100B0R4BT500XT nichicon HD
    Text: Document Number: AFT18S290−13S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.


    Original     		PDF AFT18S290-13S AFT18S290-13SR3 20luding NI-880XS-2 J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S AFT18S290 ATC100B0R4BT500XT nichicon HD

    MARKING WB1

    Abstract: MRF9135LSR3 ATC100B470JT500XT MRF9135L T491D106K035AT wb1 u 865 marking power amplifier ATC100B8R2BT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF9135L - 2 Rev. 10, 9/2008 RF Power Field Effect Transistor MRF9135LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9135L MRF9135LSR3 MARKING WB1 MRF9135LSR3 ATC100B470JT500XT T491D106K035AT wb1 u 865 marking power amplifier ATC100B8R2BT500XT

    ATC100B0R5BT500XT

    Abstract: MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 MRF6S18100NR1 A113 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100NR1 ATC100B0R5BT500XT MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 A113 A114 A115 AN1955

    C3225Y5V1H106ZT

    Abstract: 4000 watts power amplifier circuit diagram ATC100B1R1JT500XT ATC100B8R2BT500XT ATC100B1R0JT500XT C3225Y5V1H106 J9000 MW7IC2220GNR1 MW7IC2220N A114
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 1, 1/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage


    Original     		PDF MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 C3225Y5V1H106ZT 4000 watts power amplifier circuit diagram ATC100B1R1JT500XT ATC100B8R2BT500XT ATC100B1R0JT500XT C3225Y5V1H106 J9000 A114

    Chemi-Con DATE CODES

    Abstract: chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 MRF6P9220HR3 Nippon chemi
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 Chemi-Con DATE CODES chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 Nippon chemi

    A114

    Abstract: AN1955 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 5, 8/2008 MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF6S9130H MRF6S9130HR3/HSR3 MRFE6S9130HR3/HSR3. PCN12895 MRF6S9130HR3 MRF6S9130HSR3 A114 AN1955 JESD22 MRF6S9130H MRF6S9130HSR3

    ATC100B100BT500XT

    Abstract: 250GX-0300-55-22 AN1955 JESD22-A113 JESD22-A114 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1 J361 J527
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 ATC100B100BT500XT 250GX-0300-55-22 AN1955 JESD22-A113 JESD22-A114 MRF6S21100N MRF6S21100NBR1 J361 J527

    C3225Y5V1H106ZT

    Abstract: C3216X7R2E104KT A114 A115 AN1977 AN1987 JESD22 MW7IC2220GNR1 MW7IC2220N MW7IC2220NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 0, 9/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage


    Original     		PDF MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 C3225Y5V1H106ZT C3216X7R2E104KT A114 A115 AN1977 AN1987 JESD22 MW7IC2220NBR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRFE6S9130H MRFE6S9130HR3 MRFE6S9130HSR3