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    ATC600S5R Price and Stock

    American Technical Ceramics Corp ATC600S5R6BT250T

    CAPACITOR, CERAMIC, 250 V, C0G, 0.0000056 UF, SURFACE MOUNT, 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600S5R6BT250T 3,592
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
    • 1000 $0.75
    • 10000 $0.66
    		Buy Now
    ATC600S5R6BT250T 16
    • 1 $0.495
    • 10 $0.495
    • 100 $0.4125
    • 1000 $0.4125
    • 10000 $0.4125
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    New Advantage Corporation ATC600S5R6BT250T 1,650 1
    • 1 $0.35
    • 10 $0.35
    • 100 $0.26
    • 1000 $0.22
    • 10000 $0.22
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    American Technical Ceramics Corp ATC600S5R1BT250XT

    CAPACITOR, CERAMIC, 250 V, C0G, 0.0000051 uF, SURFACE MOUNT, 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600S5R1BT250XT 3,200
    • 1 $1.65
    • 10 $1.65
    • 100 $1.65
    • 1000 $0.429
    • 10000 $0.4125
    		Buy Now

    American Technical Ceramics Corp ATC600S5R6CT250XT

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 250V, 4.464% +TOL, 4.464% -TOL, C0G, 30PPM/CEL TC, 0.0000056UF, SURFACE MOUNT, 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600S5R6CT250XT 2,000
    • 1 $0.665
    • 10 $0.665
    • 100 $0.665
    • 1000 $0.266
    • 10000 $0.266
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    ATC600S5R6CT250XT 156
    • 1 $0.7
    • 10 $0.56
    • 100 $0.35
    • 1000 $0.35
    • 10000 $0.35
    		Buy Now
    ATC600S5R6CT250XT 156
    • 1 $0.7
    • 10 $0.56
    • 100 $0.35
    • 1000 $0.35
    • 10000 $0.35
    		Buy Now

    American Technical Ceramics Corp ATC600S5R6BT250XT

    CAPACITOR, CERAMIC, 250 V, C0G, 0.0000056 UF, SURFACE MOUNT, 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600S5R6BT250XT 375
    • 1 $1.317
    • 10 $1.317
    • 100 $0.6585
    • 1000 $0.5268
    • 10000 $0.5268
    		Buy Now

    American Technical Ceramics Corp ATC600S5R6BW250XT

    CAPACITOR, CERAMIC, 250 V, C0G, 0.0000056 uF, SURFACE MOUNT, 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600S5R6BW250XT 298
    • 1 $2.794
    • 10 $2.794
    • 100 $1.397
    • 1000 $1.2922
    • 10000 $1.2922
    		Buy Now
    ATC600S5R6BW250XT 284
    • 1 $1.1825
    • 10 $1.1825
    • 100 $0.5913
    • 1000 $0.5913
    • 10000 $0.5913
    		Buy Now
    Find more ATC600S5R price and stock on Findchips.com

    ATC600S5R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TO272

    Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
    Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to


    Original     		MWIC930/D MWIC930R1 MWIC930GR1 MWIC930 MWIC930R1 TO272 RM73B2BT A113 GRM42 MWIC930GR1 2XE3 PDF

    transistor marking code 1325

    Abstract: R04003 ims pcb filtronic Solid State
    Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		FPD1000AS FPD1000AS J-STD-020C, transistor marking code 1325 R04003 ims pcb filtronic Solid State PDF

    transistor SMD P1f

    Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f Transistor p1f MARKING P1F SMD Transistor p1f p1f on MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic PDF

    transistor SMD P2F

    Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
    Text: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		FPD1000AS FPD1000AS J-STD-020C, transistor SMD P2F smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 T491B105M035AS7015 filtronic Solid State PDF

    140-A525-SMD

    Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
    Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		AGRB03GM AGRB03GM IS-95 DS04-259RFPP 140-A525-SMD Z1 SMD agere c8 c1 atc600 JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa PDF

    MD8IC970NR1

    Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		MD8IC970N MD8IC970NR1 MD8IC970GNR1 GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT PDF

    J293

    Abstract: ATC600S150JW J1805 ATC600S6R8CW atc600s1 J053 TO272 RM73B2BT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure. Its


    Original     		MWIC930 MWIC930R1 MWIC930GR1 J293 ATC600S150JW J1805 ATC600S6R8CW atc600s1 J053 TO272 RM73B2BT PDF

    gsc3

    Abstract: GRM188R71C104K01D ATC600F4R7BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		MD8IC970N MD8IC970NR1 MD8IC970N gsc3 GRM188R71C104K01D ATC600F4R7BT250XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWIC930N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to


    Original     		MWIC930N MWIC930NR1 MWIC930GNR1 MWIC930N PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MWIC930 Freescale Semiconductor Rev. 5, 5/2006 Replaced by MWIC930NR1 GNR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MWIC930 MWIC930NR1 MWIC930 MWIC930R1 MWIC930GR1 PDF

    J252

    Abstract: A113 AN1955 AN1987 MWIC930 MWIC930GNR1 MWIC930GR1 MWIC930NR1 MWIC930R1
    Text: Freescale Semiconductor Technical Data MWIC930 Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage structure. Its


    Original     		MWIC930 MWIC930 MWIC930NR1 MWIC930GNR1 MWIC930R1 MWIC930GR1 J252 A113 AN1955 AN1987 MWIC930GR1 PDF

    RM73B2AT102J

    Abstract: free schematic diagram of IC 4558 free IC 4558 RM73B2AT102J DATASHEET RM73B2BT105J INF 740 J7440 RM73B2BT KOA RM73B2AT102J DATASHEET Fet j584
    Text: Document Number: MWIC930 Freescale Semiconductor Rev. 5, 5/2006 Replaced by MWIC930NR1 GNR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MWIC930 MWIC930NR1 MWIC930 MWIC930R1 MWIC930GR1 RM73B2AT102J free schematic diagram of IC 4558 free IC 4558 RM73B2AT102J DATASHEET RM73B2BT105J INF 740 J7440 RM73B2BT KOA RM73B2AT102J DATASHEET Fet j584 PDF

    SMD Transistor p1f

    Abstract: bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD FPD1000AS MIL-HDBK-263
    Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1000AS FPD1000AS R04003, CB100 SMD Transistor p1f bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD MIL-HDBK-263 PDF

    transistor SMD P1f

    Abstract: atc600s marking code 68W MARKING P1F SMD Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015 Transistor p1f CB100
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f atc600s marking code 68W MARKING P1F SMD Transistor p1f MIL-HDBK-263 T491B105M035AS7015 Transistor p1f PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		MD8IC970N MD8IC970N MD8IC970NR1 MD8IC970GNR1 PDF

    ims pcb

    Abstract: No abstract text available
    Text: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		FPD1000AS FPD1000AS PARSTD-1686 MIL-HDBK-263. FPD1000AS-EB EB-1000AS-AB 880MHz) EB-1000AS-AA 85GHz) ims pcb PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MWIC930N Rev. 6, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to


    Original     		MWIC930N MWIC930N MWIC930NR1 MWIC930GNR1 PDF

    free IC 4558

    Abstract: ATC600S470JW MWIC930NR1 free schematic diagram of IC 4558 atc600 A113 AN1955 AN1977 AN1987 MWIC930GNR1
    Text: Freescale Semiconductor Technical Data Document Number: MWIC930N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to


    Original     		MWIC930N MWIC930N MWIC930NR1 MWIC930GNR1 free IC 4558 ATC600S470JW free schematic diagram of IC 4558 atc600 A113 AN1955 AN1977 AN1987 MWIC930GNR1 PDF

    MWIC930

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its


    Original     		MWIC930 MWIC930R1 MWIC930GR1 PDF

    ATC600S680JW250

    Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		FPD1000AS FPD1000AS R04003, CB100 ATC600S680JW250 PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R PDF

    020C

    Abstract: AN1955 AN1987 MWIC930 MWIC930GR1 MWIC930R1 A 2057
    Text: Freescale Semiconductor Technical Data MWIC930 Rev. 2, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its


    Original     		MWIC930 MWIC930 MWIC930R1 MWIC930GR1 020C AN1955 AN1987 MWIC930GR1 A 2057 PDF

    hatching machine

    Abstract: MWIC930 MWIC930GR1 MWIC930R1 RM73B2AT102J
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and


    Original     		MWIC930/D MWIC930R1 MWIC930GR1 MWIC930 MWIC930R1 hatching machine MWIC930GR1 RM73B2AT102J PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1000AS FPD1000AS R04003, CB100 PDF

    CAPACITOR 33PF

    Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features „ „ „ „ Optimum Technology Matching Applied „ „ GaAs HBT „ DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT


    Original     		FPD1000AS 31dBm 42dBm -52dBc 21dBm FPD1000AS 14GHz) EB1000AS-AD CAPACITOR 33PF 8653 p T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor PDF