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    ATC700B Search Results

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    Kyocera AVX Components ATC700B560GMS500X

    Silicon RF Capacitors / Thin Film
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    Mouser Electronics ATC700B560GMS500X 274
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    American Technical Ceramics Corp ATC700B201JW300XTV

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    American Technical Ceramics Corp ATC700B820JWDRD

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    American Technical Ceramics Corp ATC700B220JT1500XT

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    American Technical Ceramics Corp ATC700B6R8CT500X

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    ATC700B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATC700Bxxx American Technical Ceramics NPO Porcelain and Ceramic Multilayer Capacitors Scan PDF

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    McMaster-Carr

    Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933 McMaster-Carr m174 92196a ATC200B marking h5 92196A1 91252 5050-0037

    balun 50 ohm

    Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
    Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 balun 50 ohm 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 trifilar

    "27 mhz" amp

    Abstract: arf15beo 700B ARF1500 ARF1501
    Text: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1501 1525-xx 40MHz ARF1501 ARF1500 75-380pF "27 mhz" amp arf15beo 700B ARF1500

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    L-Band 1200-1400 MHz

    Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
    Text: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description


    Original     		PDF STAC1214-250 STAC1214-250 STAC265B L-Band 1200-1400 MHz ATC100B390 CR1206-8W ATC100B101 ATC100B910

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154

    RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

    Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
    Text: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 TSD2932 RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR

    723 voltage regulator

    Abstract: RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH
    Text: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF157FL 80MHz VRF157FL 30MHz, MRF157 723 voltage regulator RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH

    723 voltage regulator

    Abstract: IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 VRF157FL RL1009-5820-97-D1
    Text: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF157FL 80MHz VRF157FL 30MHz, MRF157 723 voltage regulator IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 RL1009-5820-97-D1

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi

    j-12000

    Abstract: j6201 J557 ATC100B0R6BT250XT J1069 ATC100B8R2BT250XT GRM31CR71H475KA12L A114 A115 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2240N Rev. 0, 11/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage


    Original     		PDF MW7IC2240N MW7IC2240N MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 j-12000 j6201 J557 ATC100B0R6BT250XT J1069 ATC100B8R2BT250XT GRM31CR71H475KA12L A114 A115 AN1987

    MC1723

    Abstract: No abstract text available
    Text: VRF157FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF157FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation distortion.


    Original     		PDF VRF157FL 80MHz VRF157FL 30MHz, MC1723

    Vishay rnc90

    Abstract: disadvantages of astable multivibrator RTD signal conditioning theory thin film rtds circuit diagram temperature measurement rtd constant current source rtd circuits op amp oscillator 2pt100 IEC-60751 AN895
    Text: AN895 Oscillator Circuits For RTD Temperature Sensors Author: RTDs serve as the standard for precision temperature measurements because of their excellent repeatability and stability characteristics. A RTD can be characterized over it’s temperature measurement range to


    Original     		PDF AN895 MCP6001 MCP6541 D-85737 NL-5152 DS00895A-page Vishay rnc90 disadvantages of astable multivibrator RTD signal conditioning theory thin film rtds circuit diagram temperature measurement rtd constant current source rtd circuits op amp oscillator 2pt100 IEC-60751 AN895

    ARF1501

    Abstract: "27 mhz" amp 700B ARF1500 RF BeO
    Text: S D ARF1501 S ARF1501 BeO RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 1525-xx G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1501 1525-xx 40MHz ARF1501 ARF1500 75-380pF "27 mhz" amp 700B ARF1500 RF BeO

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


    Original     		PDF MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC2240N Rev. 1, 6/2011 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2240N MW7IC2240N MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz,

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154

    T491B476K016AT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications


    Original     		PDF MRFE6S9125N MRFE6S9125NR1 MRFE6S9125NBR1 T491B476K016AT

    Untitled

    Abstract: No abstract text available
    Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS


    OCR Scan     		PDF SD2900 SD2900 1021498C 1010936C