Untitled
Abstract: No abstract text available
Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26P100â
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ATC800B
Abstract: BLF7G20LS-200 BLF7G20
Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance
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BLF7G20L-200;
BLF7G20LS-200
BLF7G20L-200
7G20LS-200
ATC800B
BLF7G20LS-200
BLF7G20
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at
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MRF6V13250H
MRF6V13250HR3
MRF6V13250HSR3
MRF6V13250HR3
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Z25 transistor
Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from
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AFT05MP075N
AFT05MP075NR1
AFT05MP075GNR1
Z25 transistor
ATC800B101JT500XT
Wire Microstrip Line
Z-34
J103 transistor
atc600f150jt250xt
BEAD10
AFT05MP075GNR1
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RFG1M20180
Abstract: ATC800B820JT
Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS120418
ATC800B820JT
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Untitled
Abstract: No abstract text available
Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features Advanced GaN HEMT Technology Peak Power 125W Wideband Single Circuit for 225 - 450MHz 48V Modulated Typical
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RFHA1042
225MHz
450MHz
RFHA1042
RF400-2
-26dBc
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
EAR99
RF3931
DS120306
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Untitled
Abstract: No abstract text available
Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS110406
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BLF578
Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
Text: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W
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AN10858
BLF578
BLF578,
AN10858
BLF578
planar transformer theory
DVB-T Schematic
Transmission-Line Conversion Transformers
TIC4000
planar transformer layout
ATC800B101GT500X
ATC800B471JT200X
DVB-T transistor amplifier
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium
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RFHA1027
RFHA1027
DS131216
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed
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RFG1M20090
RFG1M20090
DS130823
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RO4350B max current
Abstract: No abstract text available
Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF8G20LS-200V
RO4350B max current
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
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BLF8G20LS-260A
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Untitled
Abstract: No abstract text available
Text: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
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BLP15M7160P
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF8G20LS-200V
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C3225X7R2A225KT
Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600H
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
C3225X7R2A225KT
8-30VDC
74C125
UT-141C-25
rf Amplifier mhz Doherty 470-860
Rogers RO4350B microstrip
ATC100B240JT500X
capacitor 104 Z30
470-860 mhz Power amplifier w
ATC-100B-3R0
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-200V Power LDMOS transistor Rev. 3 — 21 January 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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Untitled
Abstract: No abstract text available
Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 — 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.
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BLF2425M7L250P;
BLF2425M7LS250P
BLF2425M7L250P
BLF2425M7LS250P
2425M7LS250P
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Untitled
Abstract: No abstract text available
Text: BLF8G22LS-140 Power LDMOS transistor Rev. 2 — 10 April 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF8G22LS-140
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mrf6v13250h
Abstract: ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13
Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at
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MRF6V13250H
MRF6V13250HR3
MRF6V13250HSR3
MRF6V13250HR3
mrf6v13250h
ATC800B101JT500XT
T491X226K035AT
AN1955
MRF6V13250HS
MRF6V13
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MRF6VP3450H
Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
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MRF6VP3450H
MRF6VP3450HR6
MRF6VP3450HR5
MRF6VP3450HSR6
MRF6VP3450HSR5
MRF6VP3450HR6
MRF6VP3450HR5
MRF6VP3450HSR6
MRF6VP3450H
MRF6VP3450H 470-860
DVB-T Schematic
MRF6Vp3450
ATC100B331
ATC800B
ATC800B100J500XT
ATC100B331GT500XT
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Untitled
Abstract: No abstract text available
Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package
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NPT2020
NPT2020
NDS-037
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amplifier 900mhz
Abstract: No abstract text available
Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS130501
amplifier 900mhz
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26P100â
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